Hitachi, Ltd.

Renesas Technology Corp.

Hiroshi Naka

Shoichi Takahashi

Kimio Tatsuno

Kazunori Ando

Takeshi Kato

Shuji Eguchi

Toshinori Hirataka

Toshimasa Miura

Makoto Haneda

Masamichi Kobayashi

Masaaki Sawai

Shoji Hayashi

Norihiro Yazaki

Masahiro Ichiki

Shuji Kobayashi

Ichiro Seko

Masanori Ishikawa

Kazuyuki Fukuda

Shigeo Yamashita

Satoru Kikuchi

Koji Yoshida

Masaaki Tsuchiya

Naoya Sasaki

Shigenori Morishima

Katsumi Nagumo

A simple and convenient analyzing apparatus is provided which easily, conveniently, and efficiently collects a material in the state of fine particles adhered to a target object, extracts the object to be analyzed, and analyzes the extracted object. An apparatus for detecting fine particles in a gas which sucks the gas under measurement from the target object by using a suction pump, extracts the fine particles contained in the gas under measurement, and performs measurement by using a spectrometer is embodied such that an inertial impactor for collecting the fine particles having diameters not less than a specified particle diameter is disposed upstream of the spectrometer, the fine particles are collected in the fine particle collector of the inertial impactor, the collector containing the collected fine particles is heated such that the collected fine particles are vaporized into a gas, and the vaporized fluid to be examined is supplied to the spectrometer to be measured thereby.

Analyzing apparatus and fine particle collecting apparatus

The present invention provides an optical electronic device which includes a package casing made of plastic, a plurality of metal-made leads which extend between the inside and the outside of the package casing and form electrode terminals at external portions thereof, a lead base which is arranged in an inner bottom of the package and is integrally formed with at least one or the plurality of leads, a support substrate which is fixed onto the lead base and includes a conductive layer of a given pattern on an upper surface thereof, an optical element which is fixed onto the support substrate, an optical fiber which extends between the inside and the outside of the package casing and has an inner end thereof to face the optical element to perform transmission and reception of light between the optical fiber and the optical element, one or a plurality of electronic parts fixed to the leads in the inside of the package casing, and conductive wires which electrically connect electrodes of the optical element, electrodes of the electronic parts, the conductive layer of the support substrate and the leads to each other when necessary, wherein the electronic part includes one or a plurality of upper electrodes on an upper surface thereof and the upper electrodes are connected to other conductive portions through conductive wires. Due to such a constitution, the reliability of mounting electronic parts can be enhanced.

Optical electronic device

An optical communication equipment includes a semiconductor laser element, an image-forming element, an optical fiber and a substrate for mounting the semiconductor laser element, the image-forming element and the optical fiber. An optical output of the semiconductor laser element is adapted to be provided to the optical fiber via the image-forming element. The image-forming element is mounted in a V-groove formed in the substrate and having a substantially &ldquo;V&rdquo;-shaped cross-section. A shortest distance between a light spot of the semiconductor laser element and an optical axis of the image-forming element is 1 mm at most and the image-forming element substantially satisfies the sine condition.

Optical communication equipment and optical communication network equipment

Module for optical communication

It is a subject to realize an optoelectronic device for reliably monitoring a laser optical beam intensity by a photodetector. In the optoelectric device, a semiconductor laser chip, an optical fiber for taking a front laser beam of the semiconductor laser chip from the top end surface and a photodetector for receiving a rear laser beam of the semiconductor laser chip are fixed on a main surface of a platform, and each of the optical parts and portions including. an optical channels between each of the optical parts are covered with a silicone gel, wherein a portion of the main surface of the platform between the top end of the optical fiber and the semiconductor laser chip and between the photodetector and the semiconductor laser chip has concaves so that voids are not formed upon curing of the silicone gel. The edge of the concave on the side of the semiconductor laser chip is situated closer to the semiconductor laser chip than to the emitting facet of the semiconductor laser chip. The end of the bonding portion for fixing the semiconductor laser chip to the platform recedes inward of the emitting facet.

Optoelectronic devices and manufacturing method thereof

A photo-electronic device including a package having a main body portion containing parts including a photoelectric conversion element at inside thereof and a guide portion a front end of which faces the photoelectric conversion element for guiding, in a penetrated state, an optical fiber for transmitting and receiving light to and from the photoelectric conversion element, in which the optical fiber is fixed to the guide portion by adhering agent at the guide portion and portions of the main body portion including the photoelectric conversion element and a front end portion of the optical fiber are covered by a protective film formed by a resin transparent to the light and a dam is provided between the protective film and the adhering agent such that the protective film and the adhering agent are not brought into contact with each other.

Photo-electronic device and method of producing the same

There is provided a method for manufacturing a photoelectronic device comprising a silicon platform (support substrate) having a groove for guiding an optical fiber, a semiconductor laser chip secured on the substrate and an optical fiber fitted in the groove at one end thereof to be secured on the support substrate wherein the optical fiber fitted in the groove is secured on the support substrate with a first bonding element constituted by an adhesive injected to fill the groove under the optical fiber; one surface of the support substrate is covered with silicone gel; the support substrate is secured in a package made of plastic; and the package is filled with the silicone gel which is a protective film transparent to light transmitted by the optical fiber and resistant to humidity.

Photoelectronic device and method of manufacturing the same

A module for optical communication includes an optical fiber having an axial-end surface and an optical element having an optical surface facing the axial-end surface in such a manner that light is transmitted between the optical surface and the axial-end surface. The optical surface defines a first plane that is not perpendicular to the longitudinal axis of the optical fiber. A synthetic resin is provided between the optical surface of the optical element and the axial-end surface of the optical fiber so that light is transmitted through the synthetic resin.

A light emitting device is disclosed which includes a semiconductor block, an active layer disposed in such a fashion as to penetrate through the mutually facing end surfaces of the semiconductor block, and an electrode disposed on the main plane of the semiconductor block, wherein the electrode consists of a first electrode portion disposed along the active layer, and a second electrode portion continuing integrally the first electrode portion and having the periphery thereof out of contact from the periphery of the second main plane of the semiconductor block. A current is caused to uniformly flow through the entire active layer, and a light emitting operation is carried out stably. Since the electrode is not disposed on the periphery of the semiconductor block, the occurrence of junction short-curcuit, which might otherwise occur when a wafer is cut off to produce laser chips or when the corners of the chip break off, can be reduced.

Light emitting device with improved electrode structure to minimize

This invention relates to a semiconductor laser of a buried-hetero structure. In this semiconductor laser, the side surfaces of an active layer are in contact with a plane having a stable state of interface. As a result, the threshold current value of this semiconductor laser is low, and a stable operation can be obtained without causing any kink (projection) in the current-optical output characteristics. An optical communication system using this semiconductor layer has a low operating current, and can maintain high coupling efficiency with an optical fiber without the occurrence of noise, so that optical communication having high reliability is possible.

Light emitting chip and optical communication apparatus using the same

This invention relates to a semiconductor laser of a buried-hetero structure. In this semiconductor laser, the side surfaces of an active layer are in contact with a plane having a stable state of interface. As a result, the threshold current value of this semiconductor laser is low, and a stable operation can be obtained without causing any kink (projection ) in the current-optical output characteristics. An optical communication system using this semiconductor layer has a low operating current, and can maintain high coupling efficiency with an optical fiber without the occurrence of noise, so that optical communication having high reliability is possible.

A light emitting device is disclosed which includes a semiconductor block, an active layer disposed in such a fashion as to penetrate through the mutually facing end surfaces of the semiconductor block, and an electrode disposed on the main plane of the semiconductor block, wherein the electrode consists of a first electrode portion disposed along the active layer, and a second electrode portion continuing integrally the first electrode portion and having the periphery thereof out of contact from the periphery of the second main plane of the semiconductor block. A current is caused to uniformly flow through the entire active layer, and a light emitting operation is carried out stably. Since the electrode is not disposed on the periphery of the semiconductor block, the occurrence of junction short-circuit, which might otherwise occur when a wafer is cut off to produce laser chips or when the corners of the chip break off, can be reduced.

Growing community of inventors

Komoro, Japan

Hiroshi Naka