Yamaha Corporation

Hiroshi Naito

Hideki Sato

Masayoshi Omura

Yukio Wakui

Suguru Tabara

Toshiyuki Oohashi

Syuusei Takami

Kiyoshi Natsume

Hiroaki Fukami

A magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming X-axis and Y-axis sensors are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels in the thick film. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.

Magnetic sensor and manufacturing method therefor

There is provided a small-size magnetic sensor for detecting the intensity of a magnetic field in three axial directions, in which a plurality of giant magnetoresistive elements are formed on a single semiconductor substrate. A thick film is formed on the semiconductor substrate; giant magnetoresistive elements forming an X-axis sensor and a Y-axis sensor are formed on a planar surface thereof; and giant magnetoresistive elements forming a Z-axis sensor are formed using slopes of channels formed in the thick film. Regarding the channel formation, it is possible to use the reactive ion etching and high-density plasma CVD methods. In addition, an insulating film is formed between the thick film and passivation film and is used as an etching stopper. Each of the slopes of the channels can be constituted of a first slope and a second slope, so that a magneto-sensitive element is formed on the second slope having a larger inclination angle. In order to optimize the slope shape and inclination with respect to each channel, it is possible to form a dummy slope that does not directly relate to the formation of the giant magnetoresistive elements.

A plurality of IC regions are formed on a semiconductor wafer, which is cut into individual chips incorporating ICs, wherein wiring layers and insulating layers are sequentially formed on a silicon substrate. In order to reduce height differences between ICs and scribing lines, a planar insulating layer is formed to cover the overall surface with respect to ICs, seal rings, and scribing lines. In order to avoid occurrence of breaks and failures in ICs, openings are formed to partially etch insulating layers in a step-like manner so that walls thereof are each slanted by prescribed angles ranging from 20&#xb0; to 80&#xb0;. For example, a first opening is formed with respect to a thin-film element section, and a second opening is formed with respect to an external-terminal connection pad.

Method of fabricating an integrated circuit having a multi-layer structure with a seal ring

Semiconductor device having step-wise connection structures for thin film elements

A small-size magnetic sensor comprises three axial sensors each configured using plural giant magnetoresistive elements, wherein an X-axis sensor and a Y-axis sensor are arranged on the planar surface of an embedded layer of a substrate, and giant magnetoresistive elements forming a Z-axis sensor are formed on slopes of projections, which are formed by etching the embedded layer. It is possible to form an elongated projection on a substrate by way of the high-density plasma CVD method or by way of plasma etching and microwave etching, so that giant magnetoresistive elements are formed on the slopes of the elongated projection.

Integrated circuits having a multi-layer structure with a seal ring

A semiconductor device, comprising a semiconductor chip; a pad electrode; an electrode portion; a wiring portion. An insulating portion is formed from electrically insulating material, covering the surface of the semiconductor chip and sealing the sensor element, wiring portion and electrode portion, in a state which exposes at least the electrode portion on the surface of the semiconductor chip. The electrode portion is placed in a position which does not overlap with the sensor element in the thickness direction of the semiconductor chip.

Semiconductor device, magnetic sensor, and magnetic sensor unit

A sacrificial film is formed on a substrate and a mask layer is formed on the sacrificial film. An opening having a predetermined pattern is formed through the mask layer. The sacrificial film exposed in the opening is removed to form a cave broader than the opening on the substrate. A noble metal thin film is deposited on the whole substrate surface. The sacrificial filmis dissolved and removed to form a noble metal thin film pattern.

Method of forming noble metal thin film pattern

A method of manufacturing a semiconductor device includes the steps of: a) forming a wiring layer on a semiconductor substrate, the wiring layer being an Al or Al alloy layer, or a laminated wiring layer including an Al or Al alloy layer and a Ti or Ti alloy layer formed thereon; b) coating a resist layer on the wringing layer and patterning the resist layer to form a wiring resist pattern; c) patterning the wiring layer to form a wiring pattern 3 by using the wiring resist pattern as a mask; d) forming an interlayer insulating film 5 on the semiconductor substrate to cover the wiring pattern; e) coating a resist layer on the interlayer insulating film and patterning the resist layer to form a connection hole resist pattern 6; f) dry-etching the interlayer insulating film with an etching gas containing fluorine to form a connection hole reaching the wiring pattern 3, by using the connection hole resist pattern as a mask; g) after the step f), rinsing the semiconductor substrate in a liquid 10 made of a material selected from a group consisting of water, alcohol, pyridine, and combinations thereof; and h) after the step g), ashing the connection hole resist pattern 6.

Growing community of inventors

Hamamatsu, Japan

Hiroshi Naito