Kabushiki Kaisha Toshiba

Hiroshi Nagasawa

Satoshi Komoto

Hitoshi Kawasaki

Hiroaki Oshio

Iwao Matsumoto

Tsuguo Uchino

Tadashi Umegi

Tuguo Uchino

Iwao Matumoto

A semiconductor light emitting device includes a semiconductor light emitting element (,), a resin stem (,) having a recess (,), and a projection (,) made of a light-transmissive thermosetting resin on the resin stem so as to cover the entire upper surface and continuous upper part of side surfaces of the resin stem to a predetermined depth. The recess is filled with a light-transmissive resin encapsulating element (,) to embed the semiconductor light emitting element, one end of an externally extended first lead (,) and one end of an externally extended second lead (,) electrically connected to first and second electrodes of the semiconductor light emitting element, and a bonding wires (,) connecting the second lead to the second electrode. The projection functions as a lens and is made by hardening a fluid-state resin in an encapsulating case mold. Since the projection extends over the upper surface and upper part of side surfaces continuous from the upper surface, it is firmly bonded to the resin stem with a high adherability.

Semiconductor light emitting device and its manufacturing method

In manufacturing an optical semiconductor device, light-emitting elements are mounted on their respective printed boards of an insulating plate with a silver paste interposed therebetween. A sealing mold having a shape (a lens forming portion) necessary for forming a projected lens is adhered to the major surface of the insulating plate in accordance with each of the light-emitting elements of each of the printed boards. A liquid epoxy resin having a melt viscosity of 100 Pa.multidot.s to 200 Pa.multidot.s is continuously injected into the sealing mold with the lens forming portion of the sealing mold downward. The liquid epoxy resin is then hardened to form a projected, domed lens on each of the light-emitting elements. After that, the sealing mold is removed, and the insulating plate is separated for each of the light-emitting elements into surface-mounted optical semiconductor devices each having a projected, domed lens. Consequently, a lens having a large diameter can be formed in a short time, thereby increasing in luminance and improving in yield and quality, without increasing in manufacturing costs.

Method for manufacturing a surface-mounted type optical semiconductor

A semiconductor light emitting device of this invention has more than three light emitting diodes which includes a pair of diodes connected parallel in the reverse direction for each other. A common terminal connecting each one of electrodes of all diodes, the first terminal in which the other electrodes of the diode pair is connected, and the second terminal in which the other electrode of the rest diode is connected, are provide in order to drive the diodes separately.

Multi-color light emitting device

A semiconductor light emitting device of this invention has more than three light emitting diodes which includes a pair of diodes connected parallel in the reverse direction for each other. A common terminal connecting each one of the electrodes of said all diodes, the first terminal in which the other electrodes of said diode pair is connected, and the second terminal in which the other electrode of the rest diode is connected, are provide in order to drive said diodes separately.

Growing community of inventors

Kitakyushu, Japan

Hiroshi Nagasawa