Nagano Keiki Co., Ltd.

Other

Ykk Corporation

Nagano Keiki Seisakusho, Ltd.

Aoyama Seisakusho Ibaraki Plant Co., Ltd.

Inoue, Akihisa

Hiroshi Nagasaka

Naoki Yoshida

Hiroshi Kodama

Yoshikazu Kaneko

Akihisa Inoue

Takeshi Abe

Yukihiko Hata

Tadashi Yamaguchi

Tetsuya Katsumi

Daiji Uehara

Hitoshi Ofune

Kunihiro Yamaura

Katsumi Ose

Kouichiro Sugisaki

Ryo Tominaga

Akira Tokairin

Tetsuya Ykk Corporation Kurobe Katsumi

Tadashi Ykk Corporation Kurobe Yamaguchi

Hitoshi Ykk Corporation Kurobe Ofune

A physical quantity detector, such as a pressure sensor and a load sensor, includes a cylindrical part of which one end is closed with a strain generating part and a sensor part formed on the strain generating part. The cylindrical part is produced by melting an alloying material having a composition capable of yielding an amorphous alloy, injecting the resultant molten alloy into a metal mold, and cooling the molten alloy in the metal mold to confer amorphousness on the alloy. The metal mold includes a split mold having at least two split parts for forming a cavity and an insert pin to be inserted into the cavity so as to define the inner configuration of the cylindrical part, or further an insert core to be inserted into the mold so as to form the surface of the cavity corresponding to the surface of the strain generating part.

Method for manufacture of a physical quantity detector

A cylindrical joining member is fitted into a member to be joined that is made of a material different from the joining member. Plastic deformation is effected in a soft material of the member to be joined to hermetically join the two members together. Joining faces are provided to the two members that face and are joined to each other by the plastic deformation and with an elastic deformation pressure in an axial direction. The soft material of the member to be joined, which is located in a circumferential direction of the member, bites into a joining portion of the joining member by the plastic deformation and with the elastic deformation pressure.

Pressure vessel formed by joining two members made of different materials

An apparatus for detecting an amount of strain comprises a strain generating part, an electrical insulating layer and sensing elements. The strain generating part is a member to which strain is to be applied. The electrical insulating layer is formed on the strain generating part. The sensing elements are formed on the electrical insulating layer. Each of the sensing elements is made of a silicon film. The silicon film comprises a poly-crystalline main layer and a poly-crystalline interface-layer, which comes into contact with the electrical insulating layer.

Apparatus for detecting an amount of strain and method for manufacturing same

A fluid pressure sensor () for measuring the pressure of a fluid comprises a diaphragm portion () which is a strain generating body, a silicon oxide film () as an insulating film, and a strain gauge () made of crystalline silicon, and austenitic precipitation hardening type Fe&#x2014;Ni heat-resisting steel excellent in mechanical strength and corrosion resistance is used for the diaphragm portion (). The silicon oxide film () is formed with the internal stress thereof adjusted to the range from &#x2212;150 to 130 MPa. With this feature, the fluid pressure sensor () ensures high precision and reliability, and may be used even for measurement of a highly corrosive fluid.

Strain detector and method of manufacturing the same

A thin-film resistor () provided on a strain-generating part () via an insulating film () and an electrode thin-film () including an electrode pad () arranged in the thin-film resistor () are provided. The thin-film resistor () includes a strain-detecting thin-film resistive part () and an electrode connection () connected to the resistive part (). The electrode connection () is formed to extend to the electrode pad (). The electrode pad () includes an external-connection bonding area () and a testing probe area () formed at different positions. The electrode pad () is disposed on a tubular rigid body () provided at the outer peripheral edge of a strain-generating part ().

Strain detector and pressure sensor

An absolute-pressure type of pressure sensor is provided. The sensor has a pressure detecting device having a metal diaphragm. Strain gauges are disposed on one surface of the diaphragm, whose other surface is formed to receive fluid to be detected. The sensor comprises a lid, relay board, two seal rings, and input/output terminal. The lid provides a reference pressure space. The relay board is electrically connected to the gauge and composed of laminated ceramic members having both of through holes formed to pass through both sides thereof and a protrusion formed outwardly. The two seal rings are located to face the two sides of the board, respectively. The one seal ring air-tightly connects the relay board and the diaphragm. The other seal ring air-tightly connects the relay board and the lid. The terminal is electrically connected to the relay board and mounted on the protrusion of the relay board.

Absolute-pressure type of pressure sensor

A method of manufacturing strain-detecting devices is provided. First, plural cylindrical substrates, each of which has one end closed by a diaphragm, are fixedly placed at predetermined positions of a fixing plate. A positioning marker is previously given to the fixing plate. The fixing plate having the substrates is then assembled into a jig. The jig sustains the substrates so that an outer surface of the diaphragm of each substrate is held at the same level. Through positioning the substrates, all the diaphragms are then positioned in place in a plane direction of the fixing plate with reference to the positioning marker. A strain gage portion is simultaneously formed on each of all the diaphragms. The fixing plate is then disassembled from the jig. In this step, the substrates with the strain gage portions, i.e., strain-detecting devices, are separated from the fixing plate.

Method of manufacturing strain-detecting devices

An electrode structure for a semiconductor device is formed on the semiconductor device, consisting of silicon formed on a substrate to detect a physical quantity of the substrate and converting it into an electric signal, and transfers the converted electric signal to the outside. The electrode structure for the semiconductor device has a barrier layer consisting of a high-melting metal nitride and formed on a contact area of the semiconductor device and an electrode wiring formed on the barrier layer. The barrier layer has different composition ratios of the high-melting metal nitride in correspondence to each stage in the thickness of the barrier layer, in which the composition ratios are a composition ratio making a powerful bond performance at a bonding border area with the electrode wiring, and a composition ratio in which a metal element of the electrode wiring does not diffuse into the semiconductor in the barrier layer.

Electrode structure for a semiconductor device

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Tokyo, Japan

Hiroshi Nagasaka