Tokyo Electron Limited

Hiroshi Nagaike

Tsuyoshi Moriya

Hiroyuki Nakayama

Nobuyuki Nagayama

Kouji Mitsuhashi

Jun Ozawa

Hiroshi Nakamura

Kazunori Kazama

Tomoyuki Kudo

Masanobu Honda

Yohei Yamazawa

Yasuharu Sasaki

Masashi Saito

Teruyuki Hayashi

Masatomo Kita

Kikuo Okuyama

Kaoru Fujihara

Manabu Shimada

Hideaki Yakushiji

Chihiro Sato

Naoya Suenaga

Tomohito Matsuo

Takashi Tetsuka

A substrate accommodating container that accommodates a substrate includes a monitor installed inside the substrate accommodating container so as to detect a contamination state inside the substrate accommodating container, wherein the contamination state inside the substrate accommodating container is detected.

Substrate container, controller, and abnormality detection method

A processing apparatus performs a predetermined process on an object to be processed by supplying halogen-based gas into a chamber in which a vacuum is maintained, to which chamber a member having an oxide film formed on a surface thereof is connected, or which chamber has an oxide film formed on a surface thereof, wherein the predetermined processing is performed on the target object once or a plurality of times in the chamber. Later, oxygen gas or dry air is supplied to the chamber to purge the chamber, and then the chamber is opened and exposed to the atmosphere.

Processing method in processing apparatus using halogen-based gas

A method of processing a metal member having a passivation film on its surface is provided. The method includes a step of heating the metal member for a predetermined period at a temperature of 300&#xb0; C. or higher.

Processing method and processing apparatus of metal member

A particle generation preventing method for preventing particle generation in a vacuum apparatus including an alumite-treated component is provided. The particle generation preventing method includes an evacuation step of evacuating the vacuum apparatus to reduce a pressure within the vacuum apparatus to less than or equal to 1.3&#xd7;10Pa (1 mTorr), a pressure increasing step of increasing the pressure within the vacuum apparatus to atmospheric pressure after the evacuation step, and a moisture adhesion step of causing moisture to be adhered to the alumite-treated component after the pressure increasing step.

Particle generation preventing method and vacuum apparatus

A plasma processing apparatus includes a processing chamber, in which a wafer W is plasma-processed, and a CPU controlling an operation of each component. A processing gas is introduced into the processing chamber under a first condition defined by a flow rate and a molecular weight of the processing gas, specifically based on a magnitude of a product A(=Q&#xd7;m) of the flow rate Qand the molecular weight mof the processing gas, and a surface of the wafer W is physically or chemically etched. And then, a pre-purge gas which may be identical to or different from the processing gas is introduced into the processing chamber through a shower head under a second condition derived from the first condition.

Cleaning method of processing apparatus, program for performing the method, and storage medium for storing the program

An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.

Internal member of a plasma processing vessel

A cleaning substrate that can prevent a decrease in the operating rate of a substrate processing apparatus. The cleaning substrate that cleans the interior of a chamber in the substrate processing apparatus has a removal mechanism that removes foreign matter in the chamber.

Cleaning substrate and cleaning method

In order to prevent particles within a unit from sticking to a substrate in a substrate processing process, an ion generator charges the particles. At the same time, a direct current voltage of the same polarity as the charged polarity of the particles is applied from a direct current power source to the substrate. In order to prevent generation of particles when producing gas plasma, a high-frequency voltage is applied to the upper and lower electrodes at multiple stages to produce plasma. In other words, at a first step, a minimum high-frequency voltage at which plasma can be ignited is applied to the upper and lower electrodes, thereby producing a minimum plasma. Thereafter, the applied voltage is increased in stages to produce predetermined plasma.

Particle sticking prevention apparatus and plasma processing apparatus

A substrate processing system which enables a minute piece of foreign matter attached to a substrate surface to be detected and are suitable for mass production of substrates. The substrate processing system has a substrate processing apparatus that carries out predetermined processing on a substrate. The substrate processing system comprises a substrate surface processing apparatus having a fluid supply unit that supplies onto a surface of the substrate a fluid containing an altering substance that alters a substance exposed at the surface of the substrate, and a substrate surface inspecting apparatus that inspects the surface of the substrate onto which the fluid has been supplied.

Substrate processing system, substrate surface processing apparatus, substrate surface inspecting apparatus, substrate surface inspecting method, and storage medium storing program for implementing the method

There is provided a particle number measurement method capable of accurately measuring the number of particles generated by a specific factor. When the number of particles is measured by irradiating laser beaminto a main exhaust linevia a glass window, receiving lights (Land L) scattered from particles (Pand P) crossing with the laser beamby a photodetector, and calculating the number of particles based on the received scattered light, static particles Pare considered as contaminants attached to the glass windowand the number of static particles Pis subtracted from the measured number of particles within the main exhaust line

Particle number measurement method

To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.

Method for cleaning elements in vacuum chamber and apparatus for processing substrates

A particle removal apparatus for removing particles from a chamber of a plasma processing apparatus, wherein the chamber is connected to a gas exhaust port and a plasma of a processing gas is generated in the chamber to plasma process a substrate to be processed, includes a particle charging control member for positively charging particles generated within the chamber by positive ions of an ion sheath region formed in a region other than the vicinity of the substrate to be processed, wherein positively charged particles are discharged from the chamber via the gas exhaust port. Therefore, there is no plasma disturbance or metal contamination, and thus can be applied to a practical use.

Particle removal apparatus and method and plasma processing apparatus

A foreign material detecting method for detecting a foreign material attached to a substrate surface includes a spraying step of spraying an organic solvent or an oil-phase material containing a halogen element to the substrate surface, a condensing step of emphasizing the foreign material by condensing the sprayed organic solvent or oil-phase material around the foreign material attached to the substrate surface by controlling a temperature of the substrate surface, and a surface inspecting step of detecting the foreign material emphasized by the condensation of the organic solvent or the oil-phase material by a surface inspecting device.

Growing community of inventors

Nirasaki, Japan

Hiroshi Nagaike