Hitachi, Ltd.

Renesas Technology Corp.

Opnext Japan, Inc.

Elpida Memory, Inc.

Hitachi-high-technologies Corporation

Hitachi Car Engineering Co., Ltd.

Oclaro Japan, Inc.

Hiroshi Moriya

Tomio Iwasaki

Hideo Miura

Shuji Ikeda

Kisho Ashida

Hiroyuki Ohta

Isamu Asano

Yoshitaka Nakamura

Mitsuaki Katagiri

Hideyuki Matsuoka

Norikatsu Takaura

Shinji Nishihara

Masashi Sahara

Shinpei Iijima

Dai Sasaki

Hisashi Tanie

Yuzuru Ohji

Toshinori Hirataka

Yutaka Inoue

Mamoru Morita

Yoshihiko Iga

Jun Kayamori

Masahiro Matsumoto

Keiji Hanzawa

Satoshi Shimada

Atsushi Miyazaki

Junichi Horie

Yoshihiro Nagaoka

Kiyotoshi Mori

Norio Ichikawa

Akio Yasukawa

Yasuo Onose

Ayano Otsubo

Akihiko Saito

Yoshiaki Niwa

Susumu Sorimachi

Yoshiharu Kanegae

Seiji Kuryu

Takaaki Hara

Tomohisa Suzuki

Yasuhisa Semba

Toshiaki Ozaki

Hideki Hara

Shoji Tomita

Keiichi Miyauchi

A method utilized at a sintered metal layer bonding a semiconductor element and a support substrate together suppresses cracks appearing in the sintered metal layer, and damage to the semiconductor element. A semiconductor device includes a support substrate, a semiconductor element, and a sintered metal layer bonding the support substrate and the semiconductor element. The sintered metal layer has a low porosity region disposed inward of an outer edge of the semiconductor element with the sintered metal layer bonded to the semiconductor element. The region is lower in porosity than the remaining sintered metal layer, and is formed as a wall-shaped structural body having an elongated string and extending from an upper surface to a lower surface of the sintered metal layer. The low porosity region is disposed to surround a region immediately below a center of the semiconductor element along the outer edge of the semiconductor element.

Semiconductor device, sintered metal sheet, and method for manufacturing sintered metal sheet

Provided are: a flow path switching valve that reduces the pressure load in a contact surface outer peripheral section of the flow path switching valve and inhibits friction between constituent components; and a liquid chromatographic device using the flow path switching valve. The flow path switching valve is provided with a stator having a plurality of through holes and a seal having conduction grooves for causing the through holes to conduct. The seal has a first portion present vertically beneath a region comprising at least a surface of contact with the stator, and a second portion having lower rigidity than the first portion, on the outside of the first portion. Due to this configuration, it is possible to reduce the pressure load when a flow path of a liquid is switched under high-pressure conditions, and inhibit the phenomenon of friction itself.

Fluid switching valve and liquid chromatograph apparatus using the same

Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate; a common electrode, which is formed on a first surface of the semiconductor substrate; a semiconductor layer, which is formed on the other surface of the semiconductor substrate, and has a plural number of light emitting portionswithin an inside thereof; a plural number of anode electrodesof a second conductivity type, which are formed above the plural number of light emitting portions, respectively; and a supporting portion, which is provided outside a region of forming the light emitting portions, wherein on one surface of the sub-mount is connected an electrodeof the semiconductor laser element array through a solder, and that solderis formed to cover a supporting portion and an electrode neighboring thereto, and further on the electrodeis formed a groove portionbetween the supporting portionneighboring and the light emitting portions

Multi-beam semiconductor laser device

In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.

Semiconductor device including semiconductor chips with different thickness

In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.

Semiconductor laser device

Diffusion layers-are formed on a silicon substrate, and gate dielectric filmsand gate lectrodesare formed on these diffusion layers-so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films. Gate dielectric filmsare formed, for example, by CVD. As substrate, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrateor gate electrodes. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

Semiconductor device

A phase change memory comprises: a substrate; an insulation film formed on a main surface of the substrate; a first electrode deposited on the insulation film; a phase change recording film deposited on the first electrode; and a second electrode deposited on the phase change recording film. The phase change recording film contains at least two of Ge, Sb and Te as main constituting elements thereof. The first electrode comprises material of group of Ti, Si and N, or group of Ta, Si and N as main constituting material thereof.

Phase change memory and phase change recording medium

Diffusion layers-are formed on a silicon substrate, and gate dielectric filmsand gate electrodesare formed on these diffusion layers-so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films. Gate dielectric filmsare formed, for example, by CVD. As substrate, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrateor gate electrodes. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less thanof the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring

There is provided a semiconductor device having a wiring structure which reduces possibility of a short circuit, and method of making the device. Besides, there is provided a semiconductor device having high reliability. Further, there is provided a semiconductor device having high yield. A wiring line is formed at one main surface side of a semiconductor substrate, and has a laminate structure of an adjacent conductor layer and a main wiring layer. The main wiring layer contains an added element to prevent migration. The adjacent conductor layer is formed of a material for preventing a main constituent element and the added element of the main wiring layer from diffusing into the substrate beneath the adjacent conductor layer, and the concentration of the added element at a location close to an interface between the adjacent conductor layer and the main wiring layer is low compared to the concentration of the added element in the main wiring layer spaced from the adjacent conductor layer.

Semiconductor device and method of manufacturing the same

Diffusion layersare formed on a silicon substrate, and gate dielectric filmsand gate electrodesare formed on these diffusion layersso as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films. Gate dielectric filmsare formed, for example, by CVD. As substrate, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrateor gate electrodes. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.

Miniaturized semiconductor device with improved dielectric properties

A semiconductor device constitutes an electric field effect type transistor having a semiconductor substrate, a gate insulating layer formed on the substrate and a gate electrode formed on the gate insulating layer. The gate insulating layer is mainly formed of silicon oxynitride (SiON) and a strain state of the gate insulating layer is a compressed strain state.

Semiconductor device having a gate insulating layer being mainly made of silicon oxynitride (SiON) having a compression strain state as its strain state

In order to supply a semiconductor device having high-reliability, there are used a first capacitor electrode, a capacitor insulating film formed in contact with the first capacitor electrode and mainly composed of titanium oxide, and a second capacitor electrode formed in contact with the capacitor insulating film, and there is used a conductive oxide film mainly composed of ruthenium oxide or iridium oxide for the first capacitor electrode and the second capacitor electrode. Alternatively, there is used a gate insulating film having a titanium silicate film and titanium oxide which suppress leakage current.

There is provided a semiconductor laser element which can change band gap wavelengths without change of composition of a multiple quantum well active layer and a method for fabricating a semiconductor laser module. In the method for fabricating a semiconductor laser element wherein a multiple quantum well active layer is formed on a semiconductor substrate with a crystal growth method, an insulation film is formed at the upper part of the multiple quantum well active layer, an electrode film is moreover formed on the insulation film and at least a part of the electrode film is electrically connected to the multiple quantum well active layer, distortion of the multiple quantum well active layer is controlled in the semiconductor laser element fabrication process after the process of the crystal growth method.

Method for fabricating semiconductor laser element and the same laser element

Growing community of inventors

Chiyoda, Japan

Hiroshi Moriya