Shin-Etsu Handotai Co., Ltd.

Semiconductor Technology Academic Research Center

Nanoteco Corporation

Other

Hiroshi Morisaki

Shinji Nozaki

Kazuo Uchida

Nobuhiko Noto

Masato Yamada

Kazunori Hagimoto

Hitoshi Ikeda

Jun-ya Ishizaki

Masahisa Endo

Masanobu Takahashi

Shunichi Ikeda

Kingo Suzuki

A light-emitting devicehas ITO transparent electrode layersused for applying drive voltage for light-emission to a light-emitting layer section, and is designed so as to extract light from the light-emitting layer sectionthrough the ITO transparent electrode layers. The light-emitting devicealso has contact layers composed of In-containing GaAs, formed between the light-emitting layer sectionand the ITO transparent electrode layers, so as to contact with the ITO transparent electrode layers respectively. The contact layersare formed by annealing a stackobtained by forming GaAs layerson the light-emitting layer section, and by forming the ITO transparent electrode layersso as to contact with the GaAs layersto thereby allow In to diffuse from the ITO transparent electrode layersinto the GaAs layersThis provides a method of fabricating a light-emitting device, in which the ITO transparent electrode layers as the light-emission drive electrodes are bonded as being underlain by the contact layers, to thereby reduce contact resistance of these electrodes, and to thereby make the contact layers less susceptible to difference in the lattice constants with those of the light-emitting layer section during the formation thereof.

Method of fabricating light-emitting device and light-emitting device

In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor circuit elements or wiring patterns by oxidizing semiconductor substance in a mixture gas containing an oxygen gas in a chamber.

Semiconductor device with porous interlayer insulating film

In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.

Light-emitting device and method of fabricating the same

A light emitting device having an oxide transparent electrode layer as an emission drive electrode, and designed so that damage possibly occurs during bonding of electrode wires to the bonding pads is less influential to a light emitting layer portion is disclosed. The light emitting device has the light emitting layer portion composed of a compound semiconductor and has a double heterostructure in which a first-conductivity-type cladding layer, an active layer and a second-conductivity-type cladding layer are stacked in this order; and the light emitting layer portion is applied with emission drive voltage through an oxide transparent electrode layer formed so as to cover the main surface of the second-conductivity-type cladding layer. A bonding pad composed of a metal is disposed on the oxide transparent electrode layer, and to the bonding pad an electrode wire for current supply is bonded. Between the second-conductivity cladding layer and the oxide transparent electrode layer, a cushion layer composed of a compound semiconductor having a dopant concentration lower than that of the second-conductivity-type cladding layer is disposed.

Light emitting device and method of fabricating the same

While a crucible containing an Si material and a substrate to be processed are set in a chamber, Ar gas is supplied into the chamber and the Si material is evaporated by heating, thereby forming a nanoparticle thin film of Si on the substrate. This substrate is then annealed in an oxygen atmosphere to oxidize Si, forming a nanoparticle oxide thin film consisting of SiO.

Method of fabricating a semiconductor device having a nanoparticle porous oxide film

A light emitting devicehas a structure in which a p type InGaAs layeras an electrode contact layer and an ITO electrode layeras an oxide transparent electrode layer are formed in the order in a first major surfaceside of a light emitting layer section. In a second major surfaceside of the light emitting layer section, an n type InGaAs layeras an electrode contact layer and an ITO electrode layeras an oxide transparent electrode layer are formed in the order. The ITO electrode layersandtogether with the p type InGaAs layerand the n type InGaAs layerare formed on the respective both major surfacesandof the light emitting layer sectionso as to cover the respective both major surfacesandin the entirety thereof.

Light emitting device

In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor circuit elements or wiring patterns by oxidizing semiconductor substance in a mixture gas containing an oxygen gas in a chamber.

In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. Then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor circuit elements or wiring patterns by oxidizing semiconductor substance in a gas mixture containing an oxygen gas in a chamber.

The light-emitting device has an ITO electrode layer for applying drive voltage for light emission to a light emitting layer section , where the light from the light emitting layer section is extracted as being passed through the ITO electrode layer . Between the light emitting layer section and the ITO electrode layer , an electrode contact layer composed of In-containing GaAs is located so as to contact with such ITO electrode layer , where occupied areas and unoccupied areas for the electrode contact layer are arranged in a mixed manner on the contact interface with the transparent electrode layer . The electrode contact layer can be obtained by annealing a stack , which comprises a GaAs layer &Prime; formed on the light emitting layer section and the ITO electrode layer formed so as to contact with the GaAs layer &Prime;, to thereby allow In to diffuse from the ITO electrode layer to the GaAs layer

Light-emitting device and method for manufacturing the same

In a method of manufacturing a semiconductor device, semiconductor circuit elements or wiring patterns are formed on a semiconductor substrate. Then, a porous semiconductor oxide film is formed as an interlayer insulating film on the semiconductor substrate including the semiconductor circuit elements or wiring patterns by oxidizing semiconductor substance in a mixture gas containing an oxygen gas in a chamber.

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Tsurugashima, Japan

Hiroshi Morisaki