Sharp Kabushiki Kaisha Corporation

Sharp Kabushimi Kaisha

Hiroshi Morimoto

Yasunori Shimada

Tomohiko Yamamoto

Matahira Kotani

Masafumi Matsumoto

Hirohisa Tanaka

Mikio Katayama

Masaru Yoshida

Masahiro Adachi

Mitsuaki Hirata

Yasuyoshi Kaise

Ryoichi Kawai

Takayoshi Nagayasu

Satoshi Yamaue

Yoshitaka Hibino

Hiroshi Shirakoshi

Masahito Goto

Mitsuhiro Koden

Yuzuru Kanemori

Masafumi Yamanoue

Kenichi Shiraishi

Masayuki Hachinoda

Hidenori Negoto

Yoshimi Kojima

Yasuhiro Mitani

Takashi Oka

Nobuhiro Tamura

Takashi Shinohara

Tomomi Izumi

Kenichi Nishimura

Yutaka Nishi

Katsumara Ikubo

The method for producing a metallic wiring board of this invention comprises the steps of: implanting nitrogen on a surface of a substrate; forming a metallic film including, as a main component, one of Ta and Nb on the surface of the substrate where nitrogen is implanted by a sputtering method to form a metallic wiring by patterning the metallic film; and forming an insulating film by anodic oxidation of a surface of the metallic wiring. In the step of forming a metallic wiring form Ta or Nb on a substrate or a protective layer including nitrogen to anodic-oxidize the surface of the metallic wiring, Ta ions or Nb ions do not enter the substrate. Further, the substrate or a protective layer is doped with nitrogen, and a Ta layer is formed by the sputtering method thereon. The sputtering method has a characteristic that a material contained in the substrate is mixed into a film formed in the initial stage of the coating. Therefore, the doped nitrogen enters the Ta film, and a thin .alpha.-Ta layer is formed on the substrate or the protective film. The Ta layer to be epitaxially grown thereon is an .alpha.-Ta layer including no impurity. Thus, a Ta layer with a specific resistance of about 25 .mu..OMEGA.cm is obtained.

Metallic wiring board and a method for producing the same

A display apparatus including a plurality of pixel electrodes arranged in a matrix on a first substrate; a scanning line for sending a signal to the plurality of pixel electrodes for driving the plurality of pixel electrodes; a switching device for receiving the signal from the scanning line and switching each of the plurality of pixel electrodes into one of a conductive state and a non-conductive state in accordance with the signal; a counter electrode on a second substrate opposed to the first substrate; and a display medium layer sandwiched between the first substrate and the second substrate. The switching device includes a two-terminal element having a first electrode which is a part of the scanning line; the zinc sulfide layer on the first electrode, said zinc sulfide layer having an I-V characteristic expressed by a continuous curve; and a second electrode located on the zinc sulfide layer and electrically connected to the pixel electrode.

Display apparatus having a two-terminal device including a zinc sulfide

A method for producing metal wirings on an insulating substrate is disclosed. The method comprises the steps of forming a metal wiring layer of a predetermined shape on a predetermined position of the insulating substrate, the metal wiring layer being made of a metal capable of being oxidized; implanting the metal wiring layer with an impurity element; and forming an insulating layer by oxidizing the surface of the metal wiring layer after implanting the impurity element.

Method for producing metal wirings on an insulating substrate

A metallic wiring board includes nitrogen implanted in a surface of a substrate or a protective layer including nitrogen formed on the substrate upon which is formed a metallic film including, as a main component, one of Ta and Nb. An insulating film covering the metallic wiring is formed by anodic oxidation. The nitrogen in the substrate or the protective layer prevents Ta (or Nb) ions from entering the substrate during the anodic oxidation of the metallic wiring. As a result, insulating properties of the substrate are not degraded during the oxidation.

Metallic wiring board

A display elect:rode substrate comprising at least two, first and second, TFTs connected in series to each picture element, wherein the first and second thin film transistors are Juxtaposed on the same one of the gate bus lines, part of the gate bus line functions as gate electrodes of the first and second thin film transistors, a source electrode of the first thin film transistor is connected to the source bus line, a drain electrode of the first thin film transistor is connected to a source electrode of the second thin film transistor, and a drain electrode of the second thin film transistor is connected to the picture element electrode, whereby a picture element defect caused by a short-circuit defect of the TFTs can be reduced.

Display electrode substrate

In the liquid crystal display, a liquid crystal layer is provided between a first insulating substrate and a second insulating substrate. A plurality of first electrodes are arranged in parallel on the first insulating substrate in a first direction, and a first insulating layer is formed on the entire surface of the first insulating substrate and covers the first electrodes. A semiconductor layer is formed on the first insulating layer, and a second insulating layer is formed thereon and covers the entire surface of the first insulating substrate. This triple-layered structure constitutes a switching element array. A plurality of second electrodes are arranged in parallel on the second insulating electrode in a second direction crossing the first direction. Thus, the switching element array sandwiched between the first and second electrodes is used for driving the liquid crystal layer.

Switching element array and a liquid crystal display using the same

A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.

Method for producing an active matrix substrate

A method for producing a semiconductor device including forming an electrode or an electrode wiring by forming a tantalum thin film by sputtering is provided. In this method, a krypton gas in which nitrogen is mixed as a reactive gas is used as a sputtering gas, and a product of the pressure of the sputtering gas and a target-substrate distance is set in the range of 0.01 m.Pa to 0.08 m.Pa.

Method for producing a semiconductor device having a tantalum thin film

An active-matrix display device comprising a plurality of picture elements that are arranged into a matrix and thin-film transistors that switch the picture elements, wherein an MIS-structured diode and each of the picture elements are connected with each of the thin-film transistors in parallel.

Active-matrix display device

A facsimile apparatus of the type having a facsimile body and a paper having separately, including a double-decker structure of an original document transporting system for transporting an original document to read out original information therein to be transmitted and a paper feeding system for feeding paper to record transmitted information thereonto.

Double decker housing and paper handling device for facsimile apparatus

An active matrix substrate for the liquid crystal display has a switching circuit for switching on each of picture elements which includes a corresponding gate bus line, source bus line and a switching transistor. Further, the switching circuit includes at least one redundant structure to avoid inoperativeness of the switching circuit.

Active matrix substrate for liquid crystal display

A compact and efficient facsimile machine sheet feeding device can automatically select either roll or cut sheet paper supplies in response to received signals indicating the size of the remotely located original document being electronically transmitted thereto. The roll paper supply is preferably located in one end of a cut paper supply tray. A dual purpose document receiving bin is also preferably utilized so as to selectively receive scanned original documents at one end and to receive incoming copy documents at the other end. Either a roll sheet or cut sheet paper supply can be selected in accordance with the width of the original document. If the roll sheet supply is selected, it is cut to have the desired length of the original document.

Sheet feeding device for facsmile apparatus

A facsimile apparatus including image data conversion unit for converting image data corresponding to an image to be printed in such a manner that two adjacent dots on a main scanning line of the image data are converted into one dot a smoothing unit connected to the conversion unit for modifying converted image data in such a manner that, if a pattern of a region formed by a predetermined number of converted dots coincides with a predetermined pattern, the converted image data is changed to have a pattern corresponding to the predetermined pattern in the region; and selection unit connected to the image data conversion unit and the smoothing unit and adapted to select an output of the image data conversion unit as printing data if it is detected that the image data has been transmitted in a fine mode, and select an output of the smoothing unit as printing data if it is detected that the image data has been transmitted in a standard mode.

Facsimile apparatus

A facsimile machine for reading image information to be transmitted and recording received image information, including a setting device for setting the facsimile machine to a continuous transmission mode for continuously transmitting a plurality of original documents, a storage for storing, in response to an input from the setting device, a state of the continuous transmission mode being set and a time counting device for counting, when the state is stored in the storage, a time period after transmission of an image of each of the original documents such that a facsimile circuit of the facsimile machine is kept closed until the time period counted by the time counting device reaches a predetermined value.

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Kitakatsuragi, Japan

Hiroshi Morimoto