Disco Corporation

Osaka University

Hiroshi Morikazu

Noboru Takeda

Keiji Nomaru

Tasuku Koyanagi

Yoko Nishino

Nao Hattori

Yukio Morishige

Takumi Shotokuji

Yutaka Kobayashi

Karl Heinz Priewasser

Ryugo Oba

Toshio Tsuchiya

Shin Tabata

Koichi Takeyama

Kazuya Hirata

Hirokazu Matsumoto

Kentaro Odanaka

Naotoshi Kirihara

Satoshi Genda

Ken Togashi

Kouichi Nehashi

Yasuomi Kaneuchi

Yohei Kaneko

Hiroshi Nomura

Kazuma Sekiya

Koji Yamaguchi

Nobuyuki Kimura

Masashi Yoshimura

Yusuke Mori

Masayuki Imanishi

Taiki Sawabe

Mamoru Imade

Naoki Ohmiya

Tomoaki Endo

Frank Wei

Xiaoming Qiu

Kenya Kai

Masahiro Murata

Tomoki Yoshino

Motohiko Shimada

Fumiteru Tashino

Fumiya Kawano

Goro Watanabe

Shinichiro Uemura

Eri Kawagishi

A laser oscillation mechanism of a laser beam irradiation unit has a first mode to break growing debris, a second mode to suppress generation of molten debris, and a third mode to break the growing debris and suppress generation of the molten debris. The laser oscillation mechanism includes a selecting part that selects any of the first mode, the second mode, and the third mode. The laser oscillation mechanism sets a repetition frequency with a first group being one unit in the first mode, and sets a repetition frequency with a second group being one unit in the second mode, and sets a repetition frequency with a third group being one unit in the third mode.

Laser processing apparatus

A laser processing apparatus includes a laser oscillating mechanism for emitting pulsed laser beams. The laser oscillating mechanism includes a group setting section for establishing the number of pulsed laser beams to be applied to a workpiece until a time after which melted debris produced by the pulsed laser beams applied to the workpiece is solidified, and assigns the pulsed laser beams to a group, under conditions that, within a period of time which is shorter than a period of time in which the melted debris is produced, and within a period of time after which a plasma generated by the pulsed laser beam becomes extinct, a next pulsed laser beam is applied to the workpiece to sustain the plasma uninterruptedly to break growing debris, and a time interval setting section for establishing a time interval between the group and another group adjacent thereto.

Laser processing apparatus and laser processing method

A laser processing method includes forming a first processing mark to form an origin of dividing or a dividing groove with a laser beam in a first direction, and forming a second processing mark by forming an origin of dividing or a dividing groove with the laser beam in a second direction that intersects the first direction. An unprocessed region in which the processing is not executed remains at an intersection at which the first direction and the second direction intersect each other. The method further includes processing the unprocessed region. The unprocessed region processing step forms a coupling processing mark that couples the first processing mark and the second processing mark to each other to form an origin of dividing or a dividing groove with the laser beam in a direction arising from setting an inclination with respect to the first direction or the second direction.

Laser processing method

A laser beam irradiation unit of a laser processing apparatus includes a laser oscillator that oscillates a laser, a Y-axis scanner that executes a high-speed scan with a laser beam emitted from the laser oscillator in a Y-axis direction, an X-axis scanner that executes processing feed of the laser beam emitted from the laser oscillator in an X-axis direction, and a beam condenser. The Y-axis scanner is selected from any of an AOD, a resonant scanner, and a polygon scanner and the X-axis scanner is selected from a galvano scanner and a resonant scanner.

An inspection apparatus for a laser oscillator includes a dimming plate that dims a laser beam immediately after the laser beam is emitted from the laser oscillator; an imaging unit that images, with a plurality of pixels, the laser beam dimmed by the dimming plate; a processing unit that processes an image captured by the imaging unit; and a display unit that displays the image processed by the processing unit. The processing unit has at least two thresholds of an inner ring and an outer ring used for partitioning the intensity of the laser beam.

Inspection apparatus and inspection method

A laser processing apparatus includes a chuck table for holding a workpiece, a laser beam applying unit for applying a pulsed laser beam to the workpiece held by the chuck table while positioning spots of the pulsed laser beam on the workpiece, thereby processing the workpiece with the pulsed laser beam, and a control unit for controlling operation of the laser beam applying unit. The laser beam applying unit includes a laser oscillator for oscillating pulsed laser to emit a pulsed laser beam, a decimator for decimating pulses of the pulsed laser beam to adjust a repetitive frequency thereof, a scanner for scanning the spots of the pulsed laser beam over the workpiece at predetermined intervals, and an f&#x3b8; lens for focusing the pulsed laser beam.

A laser beam irradiation unit of a laser processing apparatus includes: a laser oscillator in which a repetition frequency is set so as to oscillate a pulsed laser having a pulse width shorter than a time of electronic excitation caused by irradiating the workpiece with a laser beam and oscillate at least two pulsed lasers within the electronic excitation time; a condenser that irradiates the workpiece held on the chuck table with the pulsed laser beams oscillated by the laser oscillator; and a thinning-out unit that is disposed between the laser oscillator and the condenser and guides the pulsed laser beams necessary for processing to the condenser by thinning out and discarding pulsed laser beams in a predetermined cycle.

A comparing method includes a processing trace forming step of positioning a condenser at a reference height and a plurality of heights by moving the condenser, and forming a plurality of processing traces in one surface of a workpiece by irradiating different positions of the one surface with a laser beam according to each of the heights, a calculating step of calculating at least one of an average of widths in a plurality of predetermined directions of each of the plurality of processing traces and an area ratio of each of the plurality of processing traces to a circle of a predetermined diameter by analyzing an image of the plurality of processing traces by an image analyzing section, and a comparing step of quantitatively comparing deviations of the plurality of processing traces from a predetermined shape on the basis of at least one of the average and the area ratio.

Comparing method and laser processing apparatus

A laser processing method for a substrate with a device formed on a front surface thereof and including an electrode pad, the method including: a laser beam applying step of applying the laser beam to the back surface of the substrate to form a fine hole in the substrate at a position corresponding to the electrode pad; a detecting step of detecting first plasma light emitted from the substrate at the same time that the fine hole is formed in the substrate by the laser beam applied thereto, and second plasma light emitted from the electrode pad; and a laser beam irradiation finishing step of stopping application of the laser beam when the second plasma light is detected in the detecting step. A peak power density of the laser beam to be applied is set in a range from 175 GW/cmor less to 100 GW/cmor more.

A laser processing method for applying a laser beam to the reverse side of a substrate with a device formed on a face side thereof and including an electrode pad, to form a pore in the substrate that leads to the electrode pad, includes an irradiation area setting step of detecting the size of the electrode pad and setting an irradiation area for the laser beam such that the pore to be formed is positioned within the electrode pad. After the irradiation area setting step has been performed, the laser beam is applied to the reverse side of the substrate to form a pore in the substrate at a position corresponding to the electrode pad. First plasma light emitted from the substrate and second plasma light emitted from the electrode pad are detected. When the second plasma light is detected, the beam is stopped from being applied to the substrate.

Laser processing method using plasma light detection for forming a pore in a substrate

A laser processing apparatus includes: a chuck table that holds a workpiece; a laser beam applying unit that applies a pulsed laser beam having a predetermined line width to the workpiece held by the chuck table; and a processing feeding unit that performs relative processing feeding of the chuck table and the laser beam applying unit. The laser beam applying unit includes: a laser oscillator that oscillates the pulsed laser beam; a focusing device that focuses the pulsed laser beam oscillated by the laser oscillator; and a pulse width adjustment unit that is disposed between the laser oscillator and the focusing device and that generates a time difference in a wavelength region of the pulsed laser beam in the predetermined line width, thereby adjusting the pulse width.

There is provided a manufacturing method of a III-V compound crystal including a seed-crystal-formed substrate provision step of providing a seed-crystal-formed substrate in which a III-V compound seed crystal has been formed on a substrate, a seed crystal partial separation step of separating part of a portion in contact with the substrate in the III-V compound seed crystal from the substrate, and a crystal growth step of generating and growing the III-V compound crystal by reacting a group III element and a group V element with use of the III-V compound seed crystal as a nucleus after the seed crystal partial separation step.

Manufacturing method of III-V compound crystal and manufacturing method of semiconductor device

A laser processing method for processing a substrate having a device formed on the front side, an electrode pad being formed on the device. The method includes applying a pulsed laser beam to the back side of the substrate at a position corresponding to the electrode pad, thereby forming a fine hole in the substrate so that the fine hole reaches the electrode pad, detecting first plasma light generated from the substrate by the application of the pulsed laser beam to the substrate and also detecting second plasma light generated from the electrode pad by the application of the pulsed laser beam to the electrode pad, and stopping the laser beam when the second plasma light is detected. Time intervals of the pulsed laser beam repeatedly applied to the same fine hole are set to 0.1 ms or more.

A method of processing a wafer includes: preparing a support substrate that can transmit ultraviolet rays having a wavelength of 300 nm or shorter and can support the wafer thereon; integrating a face side of the wafer and the support substrate by sticking the face side of the wafer and the support substrate to each other with an UV-curable resin whose adhesive power can be lowered by ultraviolet rays applied thereto interposed therebetween, thereby integrally combining the wafer and the support substrate with each other; processing a reverse side of the wafer; destroying the UV-curable resin by applying a focused laser beam in an ultraviolet range having a wavelength of 300 nm or shorter from a support substrate side; and peeling off the support substrate from the face side of the wafer.

Method of processing wafer

Disclosed herein is a laser processing method including a first application step of applying a first laser beam having a pulse width shorter than time of electron excitation generated by application of a laser beam to a workpiece, and a second application step of applying a second laser beam within the electron excitation time.

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Tokyo, Japan

Hiroshi Morikazu