Renesas Electronics Corporation

Renesas Technology Corp.

Hiroshi Mori

Tadatoshi Danno

Toru Masuda

Toru Nagamine

Tsukasa Ichinose

Takahiro Nakamura

Norio Hayashi

Nobuhiro Shiramizu

Tomomitsu Kitamura

Nobuhiro Kasa

A semiconductor device includes a semiconductor chip with first and second low noise amplifier for amplifying an inputted signal. The chip is mounted over a wiring substrate which includes first and second electrodes and first, second and third GND electrodes. The wiring substrate includes first and second conductor patterns, wherein the first conductor pattern electrically connects the first and second GND electrodes and surrounds the first and second electrodes in a plan view. The second conductor pattern electrically connects the first conductor pattern and the third GND electrode to each other and is arranged between the first and second electrodes in the plan view. The first conductor pattern extends toward an inside of the semiconductor chip from the first and second GND electrodes in the plan view.

Semiconductor device

A miniaturized semiconductor device has a package substrate, a semiconductor chip mounted on the main surface of the package substrate and having plural LNAs each for amplifying a signal, an RF VCO for converting the frequency of the signal supplied from each LNA, and an IF VCO for converting the frequency of a signal supplied from a baseband. A plurality of ball electrodes are provided on the back surface of the package substrate. The package substrate is provided with a first common GND wire for supplying a GND potential to each of the LNAs, with a second common GND wire for supplying the GND potential to the RF VCO, and with a third common GND wire for supplying the GND potential to the IF VCO. The first, second, and third common GND wires are separated from each other.

The present invention is directed to provide a low-power-consumption wide-range RF signal processing unit having a small chip occupation area. A semiconductor integrated circuit has, on a semiconductor chip, a resonant circuit including a first capacitor having a capacitance which can be controlled by a first control signal of a first control terminal, and a gyrator for equivalently emulating an inductor by including a second capacitor having a capacitance which can be controlled by a second control signal of a second control terminal. The capacitance and the inductor form a parallel resonant circuit. At the time of changing parallel resonant frequency, the capacitances of the first and second capacitors are coordinately changed. The parallel resonant circuit is suitable for an active load which is connected to an output node of an amplifier.

Active resonant circuit with resonant-frequency tunability

Semiconductor devices are provided with high performance high-frequency circuits in which interference caused by inductors is reduced. In a semiconductor device including a modulator circuit to modulate a carrier wave by a base band signal to output an RF signal and a demodulator circuit to demodulate the RF signal by use of the carrier wave to gain the base band signal and a local oscillator to generate the carrier wave, inductors respectively having a closed loop wire are adopted. Interference caused by mutual inductance is reduced by the closed loop wire. For example, where inductors are adopted in the modulator circuit, a closed loop wire is disposed around the outer periphery of the inductors.

Semiconductor devices with inductors

Semiconductor device including amplifier and frequency converter

The capacitance of the capacitor with the constant capacitance is equivalently reduced in the capacitance of a resonant capacitor in a voltage control oscillator to increase the variable amount of the capacitance of the resonant capacitor, and to expand an oscillation frequency range. There are provided a differential negative conductance generator circuit having two resonation nodes for differential output, a differential resonant circuit having a variable capacitance that is controlled by voltage control and an inductance connected in parallel to each other, and a differential negative impedance circuit. A resonant circuit and a negative impedance circuit are connected between the resonation nodes. The capacitor with the constant capacitance that occurs between the resonation nodes is reduced by the negative impedance of the negative impedance circuit. The capacitor with the constant capacitance is represented by floating capacitors that occur between one of the resonation nodes and a ground potential and between the other resonation node and the ground potential, respectively.

Voltage controlled oscillator and wireless transceiver using the same

An LC resonant circuit of an oscillator includes a parallel circuit of an inductor, a first fine adjustable capacitor and a first capacitor bank, and a series circuit of a second fine adjustable capacitor and a second capacitor bank. A frequency conversion gain of the oscillator is the sum of a frequency conversion gain of the oscillator based upon the first fine adjustable capacitor which decreases according to increase of a capacitance value of the capacitor bank and a frequency conversion gain based upon the second fine adjustable capacitor which increases according to increase of a capacitance value of the second capacitor bank. Accordingly, an LC resonant circuit for an oscillator with reduced fluctuation of a frequency conversion gain, and an oscillator and a data processing equipment using the same are provided.

Growing community of inventors

Takasaki, Japan

Hiroshi Mori