Shin-etsu Chemical Co., Ltd.

Tokyo Electron Limited

Shin-estu Chemical Co., Ltd.

Hiroshi Mogi

Yoshihiro Kubota

Yoshifumi Inoue

Toshimi Kobayashi

Shoji Akiyama

Makoto Kawai

Junichi Arami

Nobuo Kawada

Susumu Sekiguchi

Kenji Ishikawa

Shigeru Konishi

Kouichi Tanaka

Harunori Ushikawa

Isao Yanagisawa

Shinji Kojima

Kenichi Arai

Thomas Tupa

Yoshikazu Ohtani

Yasushi Matsudaira

Provided is a composite substrate which is provided with: a single crystal silicon carbide thin filmhaving a thickness of 1&#x3bc;m or less; a handle substratewhich supports the single crystal silicon carbide thin filmand is formed from a heat-resistant material (excluding single crystal silicon carbide) having a heat resistance of not less than 1,100&#xb0; C.; and an intervening layerwhich has a thickness of 1&#x3bc;m or less and is arranged between the single crystal silicon carbide thin filmand the handle substrate 12, and which is formed from at least one material selected from among silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconium oxide, silicon and silicon carbide, or from at least one metal material selected from among Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta and W. This composite substrate according to the present invention enables the formation of a nanocarbon film having few defects at low cost.

Composite substrate, method for forming nanocarbon film, and nanocarbon film

Provided is a thermal insulation laminate having both of an excellent thermal insulation property and high visible light transmittance, and further having a provided antifouling property and an excellent scratch resistance. A thermal insulation laminate includes a photocatalytic layer (); a transparent thermal insulation layer () having two transparent base plates () and composite materials including a fiber assembly () and inorganic particles () therebetween; and an adhesive layer (); the photocatalytic layer () is an outermost layer of one side thereof, and the adhesive layer () is an outermost layer of other side. A hard coat layer may be sandwiched in either at least one of between the photocatalytic layer () and the transparent thermal insulation layer (), and between the transparent thermal insulation layer () and the adhesive layer ().

Thermal insulation laminate

A cement mold-making silicone rubber composition is provided comprising (A) 100 parts by weight of a polyorganosiloxane having at least two silicon-bonded monovalent aliphatic unsaturated hydrocarbon groups in a molecule, (B) a polyorganohydrogensiloxane having at least three silicon-bonded hydrogen atoms in a molecule, in such an amount as to provide 0.1-5 silicon-bonded hydrogen atoms per monovalent aliphatic unsaturated hydrocarbon group in component (A), (C) a platinum base compound in such an amount as to provide 1-100 ppm of platinum atoms based on the weight of component (A), (D) 5-60 parts by weight of finely divided silica having a specific surface area of at least 50 m/g, and (E) 0.1-100 parts by weight of coal ash and/or pozzolan powder.

Cement mold-making silicone rubber composition

A microcontact printing stamp is formed by curing a silicone rubber composition on a master. An addition reaction cure silicone rubber composition is used comprising (A) an organopolysiloxane containing at least two aliphatic unsaturated monovalent hydrocarbon groups, (B) an organohydrogenpolysiloxane containing at least two SiH groups, (C) an addition reaction catalyst, and (D) a reinforcing resin. The cured composition has a nonfunctional low-molecular-weight siloxane D-Dcontent of up to 200 ppm.

Microcontact printing stamp

Room temperature curable silicone rubber composition

Room temperature curing organopolysiloxane composition

There is disclosed an electrostatic holding apparatus in which a voltage is applied to an conductive electrode covered with an insulating dielectric layer in order to cause the insulating dielectric layer to electrostatically attract an object. The main component of the insulating dielectric layer is ceramic containing 0.1-30 wt. % of an atomic metal, and the volume resistivity of the metal-containing ceramic at 20&deg; C. is 10  &OHgr;&middot;cm. The metallic element is Mo or W. In the electrostatic holding apparatus, since the volume resistivity of an insulating dielectric layer of an electrostatic attraction portion is decreased, a strong electrostatic force can be generated. Also, there can be maintained the capability of allowing removal of an object at the time of stopping application of voltage. Further, since neither fine cracks nor pores remain in the insulating dielectric layer after sintering, the withstand voltage is high.

Electrostatic holding apparatus having insulating layer with enables easy attachment and detachment of semiconductor object

There is disclosed an electrostatic holding apparatus in which a voltage is applied to an electrode formed of a conductive layer disposed on an insulator layer and covered with an insulating dielectric layer in order to cause the insulating dielectric layer to electrostatically attract an object. The electrostatic holding apparatus is formed of a sintered body in which a thermal expansion mitigating layer is disposed between the insulating dielectric layer and the conductive layer and/or between the conductive layer and the insulator layer. The insulating dielectric layer, the conductive layer, the insulator layer, and the thermal expansion mitigating layer are superposed and press-formed in an unfired state to obtain a green body, which is then sintered to obtain the sintered body. An insulating dielectric layer, a conductive layer and an insulator layer are united while differences in coefficient of thermal expansion among these layers are minimized in order to prevent generation of inter-layer delamination, cracks, and the like, and in order to prevent generation of distortion or warping on the electrostatic attraction surface to thereby increase the electrostatic attraction force. Further, the electrostatic holding apparatus has an excellent capability of allowing removal of an object at the time of stopping application of voltage and an increased withstand voltage.

Electrostatic holding apparatus and method of producing the same

A heating device is formed by a heating plate formed of silica and having a heating surface for heating an object to be heated, a heating element having a predetermined pattern and fixed to a surface opposing the heating surface of the heating plate, and a reflecting plate formed of silica and brought into tight contact with the surface of the heating plate on which the heating element is formed. This heating device is arranged in a processing vessel in a CVD apparatus, and a semiconductor wafer is placed on the heating device. A process gas is supplied into the processing vessel while the semiconductor wafer is heated, thereby forming a predetermined film on the semiconductor wafer.

Heating device, method of manufacturing the same, and processing

An improvement is proposed in a ceramic heater which is an integral body comprising a flat substrate plate made from an electrically insulating ceramic material, e.g., fused silica glass, and a layer of an electroconductive material formed on one surface of the substrate plate in a pattern of an electric heater element. One of the surfaces of the insulating substrate plate, on which the heater layer is formed, is subjected to a surface roughening treatment, e.g., by sand blasting, prior to the formation of the heater layer so as to be imparted with a specified surface roughness so that the heat generated in the heater layer and transmitted to the other surface as infrared rays is irregularly scattered .

Ceramic heater made of fused silica glass having roughened surface

Sintered aluminum nitride is prepared by adding a sintering aid to aluminum nitride powder and firing the mixture. The use of a rare earth element oxide mixture comprising 40-80 wt % of Y.sub.2 O.sub.3, 5-15 wt % of Dy.sub.2 O.sub.3, 2-10 wt % of Er.sub.2 O.sub.3, and 2-10 wt % of Yb.sub.2 O.sub.3 as the sintering aid provides sintered aluminum nitride having high thermal conductivity with minimal grain boundary precipitation and thus suitable as heat dissipating substrates.

Growing community of inventors

Annaka, Japan

Hiroshi Mogi