Hitachi, Ltd.

Hiroshi Miyazaki

Susumu Takahashi

Tomonori Tanoue

Yoshio Homma

Fumio Murai

Kiichiro Mukai

Masayoshi Saito

Chushirou Kusano

Katsuhiko Mitani

Microfabrication and large scale integration of a device can be realized by using a planar heterojunction bipolar transistor formed by a process comprising successively growing semiconductor layers serving as a subcollector, a collector, a base, and an emitter, respectively, through epitaxial growth on a compound semiconductor substrate in such a manner that at least one of the emitter junction and collector junction is a heterojunction, wherein a collector drawing-out metal layer is formed by the selective CVD method.

Process for fabricating heterojunction bipolar transistors

A copper film is formed by bringing the vapor of an inorganic compound of copper, such as cuprous nitrate that vaporizes upon heating, into contact with a reducing gas in the reaction chamber, so that copper ions are reduced into metal copper that is to be deposited on a substrate. The obtained copper film exhibits very good step coverage and contains very little impurities, lending itself well for forming interconnections of a semiconductor device that has a high degree of integration.

Method of forming a copper film by chemical vapor deposition

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Fuchu, Japan

Hiroshi Miyazaki