Toyoda Gosei Co., Ltd.

Meijo University

Hiroshi Miwa

Tetsuya Takeuchi

Yoshiki Saito

Masayoshi Kosaki

Kengo Nagata

Shinya Boyama

Shinichi Matsui

Hisanori Ishiguro

A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a Natmosphere at not less than 650° C. or in a N+Oatmosphere at not less than 500° C.

Method for manufacturing light-emitting element and method for removing hydrogen from light-emitting element

The present invention provides a method for producing an n-type Group III nitride semiconductor product having a high Si concentration and exhibiting favorable crystallinity. In the production method, specifically, an AlN buffer layer is formed on a sapphire substrate by MOCVD, and then a first layer (thickness: 2 &#x3bc;m) is formed from undoped GaN on the buffer layer by MOCVD at 1,140&#xb0; C. Subsequently, a second layer (thickness: 200 nm) is formed from SiOon the first layer by plasma CVD, and then the second layer is removed by use of BHF (buffered hydrofluoric acid). Next, a GaN layer (thickness: 50 nm) is grown, by MOCVD at 1,140&#xb0; C., on the first layer exposed by removal of the second layer without supply of an n-type dopant gas. Thus, on the first layer is provided a third layer formed of n-type GaN doped with Si at a high concentration and exhibiting favorable crystallinity.

Method for producing n-type group III nitride semiconductor

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Kiyosu, Japan

Hiroshi Miwa