Tsumura Co., Ltd.

Kabushiki Kaisha Toshiba

Tsumura Juntendo, Inc.

Hiroshi Mitsuhashi

Kunio Hosaka

Shigefumi Takeda

Masayuki Kimura

Shigehumi Takeda

Yoshiyuki Matsuoka

Toshihiko Watanabe

Yoshito Kawakyu

Atsushi Kamata

Tsutomu Uemoto

Yuki Matsuura

Yukio Komazawa

Isao Suzuki

Hidetoshi Fujimoto

Mitsuhiro Tomita

Nawoto Motegi

Yasumasa Goto

Shiro Takeno

Masaharu Kigawa

Hideyuki Sasaki

Akemi Tatsugi

Yoshihiro Hasegawa

Akira Hatta

Ichiro Arai

Michihiro Oose

Takashi Fujimura

Yuuichi Fujii

Kaoru Nakajima

Hiroyuki Mitsuhashi

Hirotoshi Kanatani

Yukinobu Ikeya

Atsushi Nakamura

Yoshiyuki Matsuoko

Toshihiko Yanagisawa

Mieko Mitsuhashi

Nobuo Imai

Tomoyuki Mitsuhashi

A laser annealing method includes preparing a plurality of polycrystalline silicon film samples having different grains sizes, obtaining the energy density condition corresponding to the polycrystalline silicon film sample having the highest degree of scattering, adding a certain value of the energy density to the energy density condition obtained in the preceding step so as to determine a set value of the energy density, and irradiating the amorphous silicon thin film with a laser beam at the set value of the energy density determined in the preceding step so as to carry out the laser annealing.

Laser annealing method and apparatus for determining laser annealing conditions

A thin film transistor to be adapted to each pixel switch in a liquid crystal display has a polycrystalline silicon layer which is acquired by crystallizing amorphous silicon deposited on a glass substrate by laser annealing. A characteristic curve indicating the intensity distribution of a laser beam in this laser annealing has a peak shifted on the upstream side in the direction the glass substrate is moved. In the laser annealing of amorphous silicon, the laser beam is irradiated on the amorphous silicon in such a way that a higher-intensity portion of the laser beam hits the amorphous silicon first. This can make the fluence margin of a laser beam in laser annealing wide enough to achieve a high field-effect mobility and a high yield.

Method of producing polycrystalline silicon

A method of manufacturing a poly-crystalline silicon (p-Si) film includes the steps in which an excimer laser anneals an amorphous silicon (a-Si) film deposited on a glass substrate and makes the same into the poly-crystalline silicon while the glass substrate is moved in a moving direction relative to the laser. Prior to carrying out the annealing step, a couple of the laser pulses are applied to different places of the a-Si film, provided that each of the laser pulses has different energy fluence and one pulse at a time is applied to the a-Si film. The pulse applied area is divided into two sections by a reference line perpendicular to the moving direction of the glass substrate. Average grain sizes of the p-Si film in the two sections are compared to each other to determine the moving direction.

Method of manufacturing a poly-crystalline silicon film

There is disclosed a method for manufacturing a polycrystal semiconductor film comprising the steps of applying a high energy beam to a surface of a semiconductor film comprising an amorphous or a polycrystal semiconductor provided on a surface of a substrate to melt only the semiconductor film, and solidifying the film via a solid and liquid coexisting state to form a semiconductor film comprising a polycrystal semiconductor having a large grain diameter, by heating a liquid part using a difference in an electric resistance in the liquid and solid coexisting state to heat only the liquid part, and by extending the solidification time until the completion of solidifying of the molten liquid crystal film. Furthermore, as the base film of the semiconductor film, a material having a melting point of 1600.degree. C. and a thermal conductivity of 0.01 cal/cm.s..degree. C. is used to suppress heat dissipation from the molten liquid of the semiconductor to the substrate so that time until the complete solidification can be prolonged. Furthermore, the beam is irradiated so as to form a standing wave at a predetermined position of the surface of the semiconductor film to generate the heat density distribution having the same cycle with the standing wave and to melt the semiconductor film with the result that a polycrystal semiconductor film comprising a uniform and a large crystal grains by controlling the distribution of the crystal nuclei at the interface between the base film and the substrate.

Method for manufacturing polycrystal semiconductor film

Process for preparation of dibenzocyclooctadiene type lignan

AlN is added to a SiC light emitting layer of an optical semiconductor device in a molecular state, and an association of AlN is formed between crystal lattice points, which are close to each other in said light emitting layer. Said association is largely different from said SiC in degree of electron negativity so that said association traps a carrier in said light emitting layer, and forms an exciton.

Optical semiconductor device

Iridoid derivatives and the use thereof as a drug

The present invention relates to a novel biphenyl derivative having a liver ailment-moderating action and effective as a remedy for acute hepatitis and chronic hepatitis, a process for the preparation of this biphenyl derivative and a liver ailment-moderating agent comprising this diphenyl derivative as an effective ingredient. This diphenyl derivative is represented by the following formula: ##STR1## wherein R.sub.0 and R.sub.1 independently stand for a lower alkyl group or R.sub.0 and R.sub.1 together represent a group O.dbd.C&lt;, R.sub.2 stands for an alkyl group having 1 to 3 carbon atoms, and R.sub.3 and R.sub.4 independently stand for a hydrogen atom or a lower alkyl group.

Biphenyl derivative and preparation and use thereof

The present invention relates to an anti-ulcer agent comprising a compound represented by the following general formula I as the effective ingredient, and a novel chalcone derivative included in the compound represented by this general formula I: ##STR1## wherein X and Y independently stand for a hydrogen atom or together form a single bond, R.sub.1 stands for a hydroxyl group, an acetoxy group, a carboxymethoxy group or a methoxycarbonylmethoxy group, R.sub.2 stands for a hydrogen atom, an isoprenyl group, isopentyl group or a propyl group, R.sub.3 stands for a hydroxyl group or a methoxy group, R.sub.4 stands for a hydrogen atom, a hydroxyl group or a methoxy group, R.sub.5 stands for a hydrogen atom, a hydroxyl group, a methoxy group or an isopentyl group, R.sub.6 stands for a hydroxyl group, a methoxy group or a carboxymethoxy group, and R.sub.7 stands for a hydrogen atom or a methoxy group.

Anti-ulcer agent comprising chalcone derivative

An optical semiconductor device is provided with a p-type ZnSe semiconductor layer. Si, Cl and O atoms are added, as dopants, to the ZnSe semiconductor layer. Associations of the Si, Cl and O atoms are formed to define a shallow acceptor level in the semiconductor layer. Each of the associations comprises one Si atom, one Cl atom and one O atom by which the lattice points of Se are displaced between those crystal lattice points in the semiconductor layer which are adjacent to one another.

P-type II-VI compound semiconductor doped

Anti-ulcer agent comprising chalcone derivative as effective ingredient

Certain 1,3,4-thiadiazole derivatives and anti-ulcer agent comprising

The present invention relates to a novel biphenyl derivative having a liver ailment-moderating action, which is effective for the remedy of liver diseases such as acute hepatitis and chronic hepatitis, a process for the preparation of this derivative and a liver ailment-moderating agent comprising this derivative as an active ingredient. Moreover, the present invention relates to a compound valuable as the intermediate compound for the synthesis of this derivative and a process for efficiently preparing this intermediate compound.

Biphenyl derivative and production and use thereof

Novel biphenyl derivative and preparation and use thereof

Novel biphenyl derivative and production and use thereof

Growing community of inventors

Tokyo, Japan

Hiroshi Mitsuhashi