Fujitsu Corporation

Fujitsu Microelectronics Limited

Hiroshi Minakata

Masaomi Yamaguchi

Yasuyuki Tamura

Eiji Yoshida

Daisuke Matsunaga

Toshiya Suzuki

Jun Lin

Shinji Miyagaki

Nobuyuki Nishikawa

Kazuto Ikeda

Kouji Tsunoda

Chikako Yoshida

Tsunehisa Sakoda

Akihiro Shimada

Yoshihiro Sugita

The semiconductor device comprises a gate insulating film including a first dielectric film of HfAlO(0.7&#x3c;x&#x3c;1) formed over a semiconductor substrate, and a second dielectric film different from the first dielectric film formed over the first dielectric film; and a gate electrode formed over the gate insulating film and including a polycrystalline silicon film, whereby the local abnormal growth of the polycrystalline silicon film in the process of forming the polycrystalline silicon film is prevented, and the gate leakage current can be much decreased.

Semiconductor device and method for fabricating the same

A permeation preventing film of a silicon nitride filmis inserted between a silicon substrateand a High-k gate insulation filmto thereby prevent the High-k gate insulation filmfrom being deprived of oxygen, while oxygen anneal is performed after a gate electrode layerhas been formed to thereby supplement oxygen. The silicon nitride filmwhich is the permeation preventing film, becomes a silicon oxide nitride filmwithout changing the film thickness, whereby characteristics deterioration of the High-k gate insulation filmdue to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.

A tight contact layer is disposed on a semiconductor substrate, the tight contact layer being made of one material selected from the group consisting of refractory metal, alloy of refractory metal, nitride of refractory metal, and siliconized nitride of refractory metal. An oxide surface layer is disposed on the surface of the tight contact layer, the oxide surface layer being made of oxide of material constituting the tight contact layer. A first conductive layer is disposed on the surface of the oxide surface layer, the first conductive layer being made of a platinum group or alloy which contains a platinum group. When a conductive layer made of metal such as a platinum group is formed on a tight contact layer, coverage and morphology can be prevented from being degraded.

Oxidizing a metal layer for a dielectric having a platinum electrode

A semiconductor device manufacture method has the steps of: (a) forming an interface layer of SiO or SiON on the surface of an active region of a silicon substrate; (b) forming a high dielectric constant gate insulating film such as HfSiON having a dielectric constant higher than that of silicon oxide, above the interface layer; (c) forming a gate electrode of polysilicon above the high dielectric constant gate insulating film; (d) passivating the substrate surface at least before or after the high dielectric constant gate insulating film is formed; (e) forming an insulated gate electrode structure by patterning at least the gate electrode and the high dielectric constant gate insulating film; and (f) forming source/drain regions in the active region on both sides of the insulated gate electrode structure. The semiconductor device has the high dielectric constant insulating film having a dielectric constant higher than that of silicon oxide.

Semiconductor device having high dielectric constant gate insulating layer and its manufacture method

Semiconductor device suitable for forming conductive film such as platinum with good coverage, and its manufacture

Method for fabricating a semiconductor device

A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO mask layer thoreon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.

Semiconductor device and its manufacture

A method of manufacturing a semiconductor device has the steps of: (a) forming a lower electrode made of rare metal above a semiconductor substrate; (b) depositing a capacitor dielectric film made of a high dielectric material or ferroelectric oxide on the lower electrode; (c) forming a laminated layer on the capacitor dielectric film, the laminated layer including an upper electrode layer made of rare metal and an adhesive layer with or without an SiO mask layer thereon; (d) patterning the laminated layer; (e) chemically processing the patterned, laminated layer to remove a surface layer of the laminated layer; and (f) forming an interlayer insulating film over the semiconductor substrate, covering the chemically processed, laminated layer. An adhesion force between the rare metal layer and insulating layer can be increased.

Growing community of inventors

Kawasaki, Japan

Hiroshi Minakata