Hitachi, Ltd.

Hitachi Microcomputer Engineering, Ltd.

Hitachi Tokyo Electronics Co., Ltd.

Hiroshi Mikino

Susumu Okikawa

Hiromichi Suzuki

Wahei Kitamura

Michio Tanimoto

Yoshio Nonaka

Toshihiro Satou

Tsuyoshi Kaneda

Daiji Sakamoto

Atsushi Onodera

Osamu Yukawa

Hiroshi Watanabe

The present invention is characterized in that, in a ball wedge bonding using a fine bonding wire precoated with a thin insulating layer, ultrasonic vibration is applied to a capillary to effect the delivery of the wire smoothly during movement of the capillary to a second bonding point while delivering the wire after ball bonding at a first bonding point.

Semiconductor integrated circuit device, method for producing or

A semiconductor device in which a pellet and external leads are connected by bonding wires made of aluminum containing a predetermined amount of at least one additive element, the bonding wires containing 0.05 to 3.0 weight % of at least one element selected from the group consisting of iron and palladium, or containing 0.05-3.0 weight % of at least one first element selected from the group consisting of nickel, iron and palladium and 0.05-3.0 weight % of at least one second element selected from the group consisting of magnesium, manganese and silicon, whereby the corrosion resistance of the wire is increased and the breaking strength of the wire is enhanced. The bonding wires can be connected to the semiconductor pellet by a ball bond, and it is disclosed that using a ball having a Vickers hardness of 30-50 enables good bonding of the bonding wire to, e.g., an aluminum pad on the semiconductor pellet to be achieved. A ball having such hardness can be provided by using specific aluminum alloy compositions and by a quenching of the ball. The bonding wire has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding or by employing a specified composition for the material of the bonding wire. The loop shape and bondability of the bonding wire, which can be made of aluminum or an aluminum composition containing, e.g., about 1.5 weight % of magnesium, are controlled into the best states.

Semiconductor device and method of manufacturing the same

A method of providing a silicon semiconductor pellet with a heat sink and a semiconductor device with such a heat sink. The heat sink to which the pellet is bonded with a eutectic alloy of gold and silicon interposed therebetween consists mainly of copper and contains a small amount of a metal other than copper and has been subjected to an annealing treatment.

Method of providing semiconductor pellet with heat sink

When a resin-sealed type semiconductor device having a heat dissipating plate is mounted on a mounting plate by means of screws or the like, means are provided to prevent occurrence of cracks in the resin sealing portion and semiconductor circuit elements embodied therein. To this end, the resin body, heat dissipating plate or mounting plate is thickened at portions thereof where screw receiving apertures are formed. Alternatively, washer or the like member may be employed.

Resin-sealed type semiconductor devices and manufacturing method of the

Growing community of inventors

Tachikawa, Japan

Hiroshi Mikino