Dai Nippon Printing Co., Ltd.

Nippon Steel Corporation

Hiroshi Mawatari

Masaaki Asano

Shinji Maekawa

Takamasa Takano

Hiroshi Kudo

Takafumi Okamura

Kikuzo Sawada

Hiroki Furushou

Atsuko Chigira

Toshio Sasao

A through electrode substrate includes a substrate provided with a through hole, a through electrode positioned in the through hole, and a first wiring structure including at least a first wiring layer positioned on a first surface of the substrate, and a second wiring layer positioned on the first wiring layer. The first wiring layer and the second wiring layer respectively have an insulation layer and an electroconductive layer. A first insulation layer of the first wiring layer includes at least an organic layer. At least one wiring layer of the first wiring structure includes an inorganic layer having insulation properties, the inorganic layer being positioned to a first side of the organic layer of the first insulation layer of the first wiring layer.

Through electrode substrate and mounting substrate

A wiring board is disclosed. The wiring board includes a substrate including a first element, a diffusion layer in contact with the substrate and including a first metal element, and a first metal film in contact with the diffusion layer and including a second metal element. The diffusion layer has at least a region including the first element and the first metal element and a region including the first metal element and the second metal element. A concentration of the second metal element in the diffusion layer may decrease as it approaches the substrate in a depth direction. A concentration of the first element in the diffusion layer may decrease as it approaches the first metal film in the depth direction.

Wiring board and manufacturing method of the wiring board

A through electrode substrate includes a substrate provided with a through hole; a through electrode having a sidewall portion extending along a sidewall of the through hole, and a first portion positioned on a first surface of the substrate and connected to the sidewall portion; an inorganic film that at least partially covers the first portion of the through electrode from the first side and is provided with an opening positioned on the first portion; and a first wiring structure including at least a first wiring layer having an insulation layer that is positioned to the first side of the inorganic film and includes at least an organic layer provided with an opening communicating with the opening of the inorganic film, and an electroconductive layer connected to the first portion of the through electrode through the opening of the inorganic film and the opening of the insulation layer.

Through electrode substrate, method of manufacturing through electrode substrate, and mounting substrate

A method of manufacturing a through electrode substrate, the method includes: preparing a substrate including a first surface positioned on a first side, and a second surface positioned on a second side opposite to the first side, the substrate being provided with a through hole; forming a through electrode having a sidewall portion extending along a sidewall of the through hole, and a first portion positioned on the first surface of the substrate and connected to the sidewall portion; forming an organic film inside the through hole; forming an inorganic film at least partially covering the first portion of the through electrode from the first side; forming an insulation layer positioned to the first side of the inorganic film; and forming an electroconductive layer passing through the inorganic film and the insulation layer so as to be connected to the first portion of the through electrode.

A through electrode substrate includes: a substrate including first and second surfaces respectively on a first side and a second side opposite to the first, the substrate having a through hole; and a through electrode. The through electrode has a sidewall portion along the through hole sidewall, and a first portion the first surface and connected to the sidewall portion. The through electrode substrate includes: an organic film inside the through hole; an inorganic film that at least partially covers the through electrode first portion from the first side and has an opening on the first portion; and a first wiring layer having an insulation layer to the inorganic film first side and includes an organic layer with an opening communicating with the inorganic film opening, and an electroconductive layer connected to the through electrode first portion through the inorganic film opening and the insulation layer opening.

A through electrode substrate includes: a substrate; a first electrode part provided on a first surface side of the substrate; and a second electrode part provided on a second surface side of the substrate. The plurality of holes includes a plurality of first holes and a plurality of second holes. The hole electrode part of each first hole is electrically connected to the first electrode part on the first surface side of the substrate, and the hole electrode part thereof is electrically connected to the second electrode part on the second surface side of the substrate. The electrode part of each second hole is electrically insulated from the first electrode part on the first surface side of the substrate, or the hole electrode part thereof is electrically insulated from the second electrode part on the second surface side of the substrate.

Through electrode substrate and manufacturing method thereof

The structural body related to the present disclosure includes a substrate having insulation properties arranged with a first surface and a second surface opposing the first surface, a through hole passing through the first surface and the second surface of the substrate, and a through electrode including a conductive material arranged within the through hole, the through electrode conducting the first surface and the second surface of the substrate and including a projection part exposed from the second surface to the outside of the through hole, wherein at least a part of the through hole is gradually increasing in size approaching the second surface in a thickness direction of the substrate, and forming a depression part keeping a gap between the through hole and the through electrode.

Structural body and method for manufacturing same

An electrically alterable non-volatile semiconductor memory device includes a plurality of electrically alterable memory cells arranged in columns and rows, a decoder circuit which selects at least one of the plurality of memory cells and does not select others, a writing circuit for writing a selected data in the selected memory cell through the decoder circuit, a reading circuit for reading a data stored in the selected memory cell through the decoder circuit, a comparing circuit for holding the data stored in the selected memory cell and data to be written in the memory cell and comparing both the data with each other, a judging circuit for judging whether the stored data in the selected memory cell is required to be altered or not on the basis of the comparison result of the comparing circuit, and an alteration control circuit for performing altering of the data of the memory cell when stored data is required to be altered on the basis of the judgment result of the judging circuit.

Growing community of inventors

Tokyo-to, Japan

Hiroshi Mawatari