Sumitomo Heavy Industries Ion Technology Co., Ltd.

Sumitomo Eaton Nova Corporation

Sen Corporation

Sen Corporation, an Shi and Axcelis Company

Hiroshi Matsushita

Mitsuaki Kabasawa

Yoshitaka Amano

Mitsukuni Tsukihara

Takanori Yagita

Michiro Sugitani

Hiroki Murooka

Ryota Ohnishi

Masateru Sato

Junichi Murakami

Yoshito Fujii

Yoshiaki Oogita

Yasuhiko Kimura

An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure a neutron ray from a neutron ray source which is generated in the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a plurality of measurement values measured by the plurality of neutron ray measuring instruments.

Ion implanter and ion implantation method

An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure neutron rays which are generated at a plurality of locations of the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a measurement value in at least one of the plurality of neutron ray measuring instruments.

An ion implanter includes: a main body which includes a plurality of units which are disposed along a beamline along which an ion beam is transported, and a substrate transferring/processing unit which is disposed farthest downstream of the beamline, and has a neutron ray source in which a neutron ray is generated due to collision of a ultrahigh energy ion beam; an enclosure which at least partially encloses the main body; and a neutron ray scattering member which is disposed at a position where a neutron ray which is emitted from the neutron ray source is incident in a direction in which a distance from the neutron ray source to the enclosure is equal to or less than a predetermined value.

Ion implanter

An ion implanter includes an ion source configured to generate an ion beam including an ion of a first nonradioactive nuclide, a beamline configured to support an ion beam irradiated target formed of a solid material including a second nonradioactive nuclide different from the first nonradioactive nuclide, and a controller configured to calculate at least one of an estimated radiation dosage of a radioactive ray and an estimated generation amount of a radioactive nuclide generated by a nuclear reaction between the first nonradioactive nuclide and the second nonradioactive nuclide.

An ion implanter includes an ion source configured to generate an ion beam including an ion of a nonradioactive nuclide, a beamline configured to support an ion beam irradiated target, and a controller configured to calculate an estimated radiation dosage of a radioactive ray generated by a nuclear reaction between the ion of the nonradioactive nuclide incident into the ion beam irradiated target and the nonradioactive nuclide accumulated in the ion beam irradiated target as a result of ion beam irradiation performed previously.

Ion implanter, ion beam irradiated target, and ion implantation method

An ion implantation apparatus includes a scanning unit, the scanning unit including a scanning electrode device that allows a deflecting electric field to act on an ion beam incident along a reference trajectory and scans the ion beam in a horizontal direction, and an upstream electrode device provided upstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes provided to face each other in the horizontal direction with the reference trajectory interposed therebetween and a pair of beam transport correction electrodes provided to face each other in a vertical direction perpendicular to the horizontal direction with the reference trajectory interposed therebetween. Each of the pair of beam transport correction electrode includes a beam transport correction inlet electrode body protruding toward the reference trajectory in the vertical direction in the vicinity of an inlet of the scanning electrode device.

Ion implantation apparatus

An ion implantation apparatus includes a scanning unit scanning the ion beams in a horizontal direction perpendicular to the reference trajectory and a downstream electrode device disposed downstream of the scanning electrode device. The scanning electrode device includes a pair of scanning electrodes disposed to face each other in the horizontal direction with the reference trajectory interposed therebetween. The downstream electrode device includes an electrode body configured such that, with respect to an opening width in a vertical direction perpendicular to both the reference trajectory and the horizontal direction and/or an opening thickness in a direction along the reference trajectory, the opening width and/or the opening thickness in a central portion in which the reference trajectory is disposed is different from the opening width and/or the opening thickness in the vicinity of a position facing the downstream end of the scanning electrode.

An insulation structure of high voltage electrodes includes an insulator having an exposed surface and a conductor portion, which includes a joint region in contact with the insulator, and a heat-resistant portion provided, along at least part of an edge of the joint region, in such a manner as to be adjacent to the exposed surface of the insulator. The heat-resistant portion is formed of an electrically conductive material whose melting point is higher than that of the conductor portion. The heat-resistant portion may be so provided as to have a gap between the insulator and the exposed surface.

Insulation structure of high voltage electrodes for ion implantation apparatus

In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.

Beam processing apparatus

A beam deflection scanner performs reciprocating deflection scanning with an ion beam or a charged particle beam to thereby periodically change a beam trajectory and comprises a pair of scanning electrodes installed so as to be opposed to each other with the beam trajectory interposed therebetween and a pair of correction electrodes installed in a direction perpendicular to an opposing direction of the pair of scanning electrodes, with the beam trajectory interposed therebetween, and extending along a beam traveling axis. Positive and negative potentials are alternately applied to the pair of scanning electrodes, while a correction voltage is constantly applied to the pair of correction electrodes. A correction electric field produced by the pair of correction electrodes is exerted on the ion beam or the charged particle beam passing between the pair of scanning electrodes at the time of switching between the positive and negative potentials.

Electrostatic beam deflection scanner and beam deflection scanning method

A beam deflector for scanning performs deflecting of a charged particle beam having a regular trajectory in a vacuum space to thereby periodically change the trajectory of the charged particle beam. The beam deflector comprises a pair of deflection electrodes disposed so as to confront each inner electrode surface having a symmetrical concave extending in a direction of a beam trajectory.

Beam deflecting method, beam deflector for scanning, ion implantation method, and ion implantation system

An ion beam processing apparatus comprises a beam line vacuum chamber from an ion source to a processing chamber. The apparatus further comprises a beam line structure for transporting ion beam from the ion source through the beam line vacuum chamber to the processing chamber. A mass analysis magnet unit is arranged from the outside in a partial section of the beam line vacuum chamber. An effective magnetic field area of the mass analysis magnet unit is disposed in a partial section of the beam line structure. Continuous cusp field forming magnet apparatuses are arranged at the series of beam line vacuum chamber part of the beam line structure to confine ion beam by forming continuous cusp fields.

Ion beam processing method and apparatus therefor

In an ion implantation apparatus according to the present invention, ions are extracted from an ion source with the aid of extraction electrodes. The ions thus extracted are analyzed in mass by means of a mass analysis magnet apparatus and a mass analysis slit, so that the required ions are implanted in a substrate. Magnets for generating cusp magnetic fields are serially disposed along an ion beam line extending from the front part to the rear part of the mass analysis magnet apparatus.

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Ehime, Japan

Hiroshi Matsushita