Kabushiki Kaisha Toshiba

Fuji Electric Co., Ltd.

Toshiba Lighting & Technology Corporation

Hiroshi Matsushita

Junji Sugamoto

Kenichi Kadota

Yukihiro Ushiku

Norihiko Tsuchiya

Masafumi Asano

Katsuya Okumura

Shigeru Osawa

Hajime Nagano

Hiroaki Yamada

Soichi Nadahara

Masao Iwase

Yuichiro Takahara

Tsunetoshi Arikado

Masahiro Toda

Shinichi Nitta

Yoshiyuki Shioyama

Katsujiro Tanzawa

Moriya Miyashita

Yuso Udo

Junichi Kimiya

Takeshi Osada

Masayuki Yoshida

Keiichi Shimizu

Jun Sasaki

Masahiko Kamata

Shinichiro Matsumoto

Masahiro Izumi

Kenji Takanashi

Mikimasa Yamaguchi

Toshiyuki Aritake

Akira Ogawa

Ryotaro Matsuda

Tomonobu Noda

Kenji Kawabata

Hiromichi Nakajima

Kunihiro Mitsutake

Koji Washiyama

Hiroshi Takenaga

Kenichi Tsujisawa

Yasutaka Arakawa

Michio Nakagawa

Toshitaka Arai

Hitomi Kawakami

Hideyuki Oishi

Youko Toyomaru

Hideyuki Ohanamori

Hiroshi Imanishi

Takayoshi Otake

According to one embodiment, a lamp apparatus includes a light-emitting module, housing, and a lighting circuit. The light-emitting module includes a light-emitting element. The housing opens in the direction of irradiation of a light beam and having a cap on a side opposite from the direction of irradiation of the light beam. The cap is provided with a light-emitting module mounting portion projecting in the direction of irradiation of the light beam and the light-emitting module is mounted on the light-emitting module mounting portion. The lighting circuit is accommodated in the housing.

Luminaire and lamp apparatus housing

According to one embodiment, a control method for an exposure apparatus is disclosed. The method can include retrieving, from a database, a correction amount of alignment correction at a time of exposure of a wafer and an inclination amount of a wafer stage with respect to an optical axis of an exposure optical system at the time of exposure. The method can include making a determination on the inclination amount based on a predetermined condition. The method can include making a determination on the correction amount based on the predetermined condition. In addition, the method can include issuing an alarm when the inclination amount and the correction amount both satisfy the condition.

Management method and system for exposure apparatus having alarm based on inclination amount and deviation from aligned position

According to one embodiment, a lamp device includes a light-emitting module including a semiconductor light-emitting element, a lighting circuit to light the semiconductor light-emitting element, and a housing to house the light-emitting module and the lighting circuit. The housing includes a case including a holder part to hold the light-emitting module, and a cap member fixed to the case by a fixing unit. The light-emitting module is sandwiched and fixed between the holder part and the cap member.

Lamp device and luminaire

A method for inputting a foreign substance inspection map created by foreign substance inspection for a wafer surface after each processing process in a wafer processing process, inputting a die sort map created by a die sort test after the wafer processing process, setting region segments in the wafer, setting a region number for each segment, calculating foreign substance density of the region segments, based on the foreign substance inspection map, and plotting the foreign substance density, using the region numbers, to calculate a foreign substance inspection map waveform characteristic amount, calculating failure density in the region segments, based on the die sort map, and plotting the failure density, using the region numbers, to calculate a die sort map waveform characteristic amount, calculating similarity between the foreign substance inspection map waveform characteristic amount and the die sort map waveform characteristic amount, and identifying a processing process cause of failure occurrence.

Failure detecting method, failure detecting apparatus, and semiconductor device manufacturing method

The present invention provides a linear pattern detection method which can extract and detect linear patterns distinguished by a microscopic defect distribution profile even if skipped measurements are taken. The linear pattern detection method acquires a defect map created based on results of defect inspection of a wafer; divides the defect map into a plurality of first segments; calculates a correlation coefficient of a point sequence in each of the first segments, the point sequence corresponding to a defect group contained in the first segments; calculates a total number of those first segments in which the correlation coefficient is equal to or larger than a first threshold; and determines that the wafer contains a linear pattern if the total number is equal to or larger than a second threshold.

Linear pattern detection method and apparatus

A management system includes a variable-period setting unit that sets a variable period in which quality-control values vary. Then, a retrieving unit retrieves events sandwiching the variable period. The events can be a maintenance of the semiconductor manufacturing device and/or a change of a correction value. An analysis-period setting unit sets an analysis period for analyzing a cause of variation of the quality-control values between the events retrieved by the retrieving unit.

Method and system for managing semiconductor manufacturing device

A method for controlling a semiconductor manufacturing apparatus for processing wafers divided for each lot, has acquiring quality control value data group containing quality control value data of wafers in a plurality of lots previously processed, and an equipment engineering system parameter group containing equipment engineering system parameters corresponding to the wafers; creating a prediction formula of quality control value data, acquiring a first equipment engineering system parameters; inputting the first equipment engineering system parameters to the prediction formula, and performing calculation to predict first quality control value data of the wafers in the first lot; determining processing of the wafers corresponding to the first quality control value data; acquiring measured first quality control value data of the wafers in the first lot; replacing the quality control value data corresponding to the wafers in the first processed lot; updating the prediction formula.

Method for controlling semiconductor manufacturing apparatus and control system of semiconductor manufacturing apparatus

According to the present, there is proved a semiconductor fabrication apparatus management system having: a sensor which monitors and outputs a plurality of apparatus parameters of a semiconductor fabrication apparatus which fabricates a semiconductor device; a measurement unit which measures a dimensional value of the semiconductor device, and outputs the dimensional value as dimensional data; an apparatus parameter storage unit which stores the apparatus parameters; a dimensional data storage unit which stores the dimensional data; an apparatus parameter controller which calculates predicted dimensional data by extracting the dimensional data from the dimensional data storage unit, and controls at least one of the plurality of apparatus parameters on the basis of the predicted dimensional data; and an abnormality factor extraction unit which analyzes correlations between the controlled apparatus parameter and other apparatus parameters, and extracts an abnormal apparatus parameter on the basis of a calculated correlation coefficient.

Management system of semiconductor fabrication apparatus, abnormality factor extraction method of semiconductor fabrication apparatus, and management method of the same

A semiconductor wafer has a bevel contour formed along the periphery thereof, products formed on the wafer, and an ID mark formed on the bevel contour. The ID mark shows at least the properties, manufacturing conditions, and test results of the products.

Semiconductor wafer with ID mark, equipment for and method of manufacturing semiconductor device from them

A feature amount is generated by standardizing inspection data related to a fabrication unit for each type, a similar set including fabrication units corresponding to similar feature amounts is formed by comparing the feature amounts, and apparatus difference analysis is performed between a plurality of fabrication units forming the similar set. A two-level orthogonal table is used to determine whether to adopt a feature amount of each type, and some feature amounts are not used in the apparatus difference analysis and the like by optimizing the smaller-the-better characteristic or the larger-the-better characteristic of a test value of the apparatus difference analysis, thereby reducing the calculation amount and accurately and efficiently specifying an abnormality cause.

Abnormality cause specifying method, abnormality cause specifying system, and semiconductor device fabrication method

A defect detection system includes a data acquiring section that acquires time series data of device parameter of each manufacturing device including an exposure device, and information on defect distribution in an area with a size smaller than a chip area size, a pattern classifying section that assembles the information on the defect distribution in units of shot or chip areas, and classifies the distributions to a defect pattern, a feature quantity calculating section that processes the time series data and calculates a feature quantity, a significant difference test section that calculates occurrence frequency distributions of the shot or chip area wherein the defect pattern to the feature quantity exists and does not exist, respectively, and determines the presence/absence of significant difference between the frequency distributions, and a defect detecting section that detects the device parameter corresponding to the feature quantity as the cause of defect of the defect pattern.

Defect detection system, defect detection method, and defect detection program

A failure analysis method according to the invention includes inputting the positions of failures in multiple wafers of an input device; preparing multiple sections in the multiple wafers; calculating feature amounts, which are represented by at least one numerical value representing a distribution of the failures in the multiple wafers, for each of the multiple sections; and representing by a first numerical value, the degree of similarity between the multiple wafers in terms of the feature amounts. Subsequently, the method includes detecting another wafer, which has the first numerical value greater than a predetermined first threshold, for each of the multiple wafers and forming a similar wafer group of multiple wafers with similar distributions of the failures.

Method for analyzing fail bit maps of waters and apparatus therefor

An equipment for detecting faults in semiconductor integrated circuits includes a fault input unit to input fault information for the integrated circuits formed on a semiconductor wafer, a superimposing unit to superimpose the fault information with repeating units within the surface of the semiconductor wafer, and a first characteristic factor calculation unit to calculate a first characteristic factor showing a degree to which faults are repeated every repeating unit.

Equipment for and method of detecting faults in semiconductor integrated circuits

A control system for a manufacturing apparatus includes manufacturing information input unit acquiring time series data of apparatus parameters controlling manufacturing apparatuses; failure pattern classification module classifying in-plane distributions of failures of each of the wafers into failure patterns; an index calculation unit configured to statistically process the time series data by algorithms to calculate indices corresponding to the respective algorithms; an index analysis unit providing first and second frequency distributions of the indices categorized with and without the target failure pattern, to implement significance test between the first and second frequency distributions; and an abnormal parameter extraction unit extracting failure cause index of failure pattern by comparing value of the significance test with test reference value.

System and method for monitoring manufacturing apparatuses

A system for identifying a manufacturing tool causing a failure, includes a data generating module generating factorial effect data, based on information on a failure lot group by using an orthogonal array, a chart generating module generating a factorial effect chart based on the factorial effect data, a selection module selecting failure lots caused by the same reason for a failure from among the failure lot group, based on the factorial effect chart, and an identification module identifying a manufacturing tool used as a common tool for the selected plurality of failure lots, based on history information of the manufacturing tool group.

System and method for identifying a manufacturing tool causing a fault

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Hiratsuka, Japan

Hiroshi Matsushita