Mitsubishi Denki Kabushiki Kaisha

Canon Kabushiki Kaisha

Fukuoka University

Zuken, Inc.

Nec Corporation

Mitsubishi Heavy Industries Limited

Fuji Corporation

Fuji Machine Mfg. Co., Ltd.

Hiroshi Matsuoka

Kazuo Minoura

Masahiko Enari

Akio Aoki

Kazuhiko Matsuoka

Kenichi Suzuki

Hideki Hosoya

Masayuki Usui

Satoshi Shikichi

Fumiaki Kawaguchi

Masahiro Tamaki

Kazuo Hayashi

Katsuya Kosaki

Hiroshi Yamazaki

Kazuhiro Kusunoki

Hajime Tomokage

Hidemichi Kawase

Hirohiko Matsuzawa

Hiroyuki Kojima

Ryo Hattori

Teruyuki Shimura

Akihiro Sato

Hiroshi Kyogoku

Masayuki Sakai

Hideyuki Sakata

Motoji Suzuki

Machiko Matsushita

Keiji Nagira

Manabu Katoh

Shumpei Takenaka

Takashi Nodama

Noboru Nabeta

Naomi Ishizuka

Teruyuki Hino

Eiichi Kono

Kazuo Chimura

Shigeki Kariya

Aruna Rohra

Akihito Matsumoto

Yuji Momose

Masafumi Kanai

Takashi Hamada

Yoshihisa Katoh

Takachika Imato

Provided is a manufacturing apparatus that manufactures a high-quality manufacturing object by using component information per unit of individual electronic component or per unit of package in a plurality of electronic components that have been packaged. The manufacturing apparatus is a manufacturing apparatus that manufactures a product by taking out each electronic component from packaged components in which a plurality of electronic components are packaged. The manufacturing apparatus is provided with: a component information reading unit that reads component information per unit of electronic component or per unit of package in the packaged components; a manufacturing control unit that controls, using the read component information, the manufacturing treatment of product into which electronic components indicated in the component information are incorporated; and an incorporation information generating unit that generates incorporation information regarding a state of incorporation of each electronic component in the product.

Manufacturing device, manufacturing management system, and manufacturing control program

Acquiring sets of test data on amounts of foreign matter passed through a recirculation sump screen when different amounts of foreign matter are input; forming a passed foreign matter amount approximate line that approximates the amounts of passed foreign matter with respect to the amounts of input foreign matter on the basis of the sets of test data on the amounts of passed foreign matter; forming a passed foreign matter amount envelope tangent to the passed foreign matter amount approximate line; and estimating a total passed foreign matter amount with respect to the amounts of input foreign matter on the basis of the passed foreign matter amount envelope to evaluate the recirculation sump screen are provided.

Method of evaluating amount of foreign matter passed through recirculation sump screen

An information administration system configured of: a component information management apparatus () including a component information storing unit () storing component information after sectionalizing the component information into public information and non-public information, and also sectionalizing the non-public information into information for designing and information for manufacturing, and an encryption processing unit () encrypting the non-public information; a designing information management apparatus () including a first component information receiving unit () receiving the component information, a first decryption unit () decrypting non-public component information for designing, and a designing information storing unit () storing designing information that is designed by adding the received component information thereto; and a manufacturing apparatus () including a second decryption unit () decrypting the received non-public component information for manufacturing, and a drive controlling unit () controlling driving of the manufacturing apparatus based on the received manufacturing information and component information.

Information administration system

A semiconductor device includes a semiconductor substrate, a T-shaped gate electrode, a moisture-proof insulating film, and an interlayer dielectric film. The T-shaped gate electrode has a leg portion joined to the semiconductor substrate and an overhanging head portion spaced from the semiconductor substrate. The T-shaped gate electrode includes a gate metal containing a material reactive with water. The moisture-proof insulating film is located only in the vicinity of the leg portion and covers a side surface of the leg portion of the T-shaped gate electrode. The interlayer dielectric film is located between the overhanging head portion of the T-shaped gate electrode and the semiconductor substrate and has a dielectric constant that is lower than that of the moisture-proof insulating film.

Semiconductor device

A liquid accommodating container having a configuration that allows ink to be substantially used up, does not require an increase in size or a complicated construction, and can be fabricated at lower costs. The container includes an ink chamber for holding ink and having an upper air layer. A second chamber is provided in the upper air layer. A partition divides the second chamber into an ink absorber chamber that accommodates an ink absorber and a sub ink chamber for storing a small amount of ink. A third chamber defines a space between the atmosphere and the ink absorber. An upper portion of the sub ink chamber adjacent to the ink chamber is open so as to provide communication between the upper air layer and the atmosphere through the intermediary of the sub ink chamber and the ink absorber chamber in this order. An atmosphere communicating hole is defined. A print head that discharges ink of the ink chamber is provided at the bottom of the container.

Ink tank and ink supplying apparatus

In a circuit board having lands each of which has a through hole through which a lead of an electrical part is inserted, the lead and the land being mounted in the circuit board by using lead-free solder , the width of the land corresponding to the difference in radius between the land and the through hole is set to about 0.40 mm or more. The width of the land is set to such a value that the land exfoliation due to the solidification/shrinkage of the lead-free solder and the shrinkage of the circuit board in the thickness direction can be prevented. The circuit board has circuit wires at least on both the surface and the back surface.

Circuit board and electronic equipment using the same

A method for manufacturing a semiconductor device having a heat dissipating layer including forming first separation grooves in a front surface of the semiconductor substrate; forming second separation grooves at bottoms of the first separation grooves; forming a linkage metal layer in the second semiconductor grooves; and cutting the linkage metal layer using laser light. According to this method, the top of the linkage metal layer is spaced from the surface of the semiconductor substrate and thus short-circuiting between the linkage metal layer and wires is avoided.

Method of manufacturing semiconductor device with plated heat sink by laser cutting

A method of producing a semiconductor device having a heat dissipating metal layer wherein the number of patterning steps is reduced, laser dicing produces a better profile, and first and second metal layers are prevented from separating from each other, and a semiconductor device produced by the method. The number of patterning steps is reduced by employing a flat exposure step for photoresist with mask alignment. A better appearance is obtained by forming the metal layers which connect the semiconductor devices with each other from a first metal layer having a lower melting point and a second metal layer having a higher melting point and severing the first metal layer and the second metal layer successively, from the first metal layer side. A second metal layer is prevented from peeling by preventing oxidation of the plated feeder layer through plating of the second metal layer.

Method of producing semiconductor device with heat dissipation metal layer and metal projections

A semiconductor device includes a semiconductor substrate having front and back surfaces and a heat dissipating metal layer on the back surface. The semiconductor substrate includes side surfaces covering a metal layer. The side surfaces are outwardly tapered and include a pair of upper side surfaces and lower side surfaces. A protrusion bearing semiconductor elements extends from the front surface of the substrate in a direction opposite the back surface of the substrate. The side surfaces of the protrusion are not metal covered. Thus, short-circuiting between wires connected to the semiconductor elements and the metal layer covering the side surfaces is avoided.

Semiconductor device with plated heat sink and partially plated side

A method of producing a semiconductor device having a heat dissipating metal layer wherein the number of patterning steps is reduced, laser dicing produces a better profile, and first and second matal layers are prevented from separating from each other, and a semiconductor device produced by the method. The number of patterning steps is reduced by employing a flat exposure step for photoresist with mask alignment, A better appearance is obtained by forming the metal layers which connect the semiconductor devices with each other from a first metal layer having a lower melting point and a second metal layer having a higher melting point and severing the first metal layer and the second metal layer successively, from the first metal layer side. A second metal layer is prevented from peeling by preventing oxidation of the plated feeder layer through plating of the second metal layer.

Semiconductor device with heat dissipation metal layer and metal

A semiconductor device includes a semiconductor substrate having opposite front and rear surfaces; a semiconductor element disposed on the front surface of the semiconductor substrate and including an electrode; a PHS for dissipating heat generated in the semiconductor element, the PHS including a metal layer and disposed on the rear surface of the semiconductor substrate; a via-hole including a through-hole penetrating through the semiconductor substrate from the front surface to the rear surface and having an inner surface, and a metal disposed in the through-hole and contacting the PHS; and an air-bridge wiring including a metal film and having first and second portions, the air-bridge contacting the electrode of the semiconductor element at the first portion and contacting the metal of the via-hole at the second portion. Therefore, heat produced in the semiconductor element is transferred to the PHS not only through the semiconductor substrate just under the element but also through the air-bridge wiring and the via-hole, whereby the heat dissipating property of the device is significantly improved.

Semiconductor device including plated heat sink and airbridge for heat

A rotating apparatus for rotating an object utilizes a worm gear in which worm wheel torque supplied from a rotation table can be transferred to a worm gear. In this way the invention avoids a conventional disengaging mechanism that disengages the rotating apparatus when torque is supplied from the rotation table. Further, spring members and stoppers physically define a first and second rotation ranges and a split cam shuts off a drive motor within the first rotation range. Still further, an anti-backlash member is provided on the worm gearing. To prevent pinched fingers and dust accumulation, a skirt is preferably provided on the bottom, front edge of the object being rotated which closes a gap between the object and a support surface when the object is placed on the rotating apparatus.

Rotating apparatus

In an information processing system for executing processing according to information input using a natural language, models of a dialogue between the user and the system according to the processing fields are stored, the processing field of the input information is specified, and questions for obtaining responses (inputs of necessary data) using simple expressions from the user are provided according to the model. Language expressions which the user can use for inputting commands are thereby limited, and processing is executed according to the obtained responses.

Method and apparatus for interactive document preparation using a

A semiconductor device includes a semiconductor substrate having opposite front and rear surfaces; lower electrodes disposed on the front surface of the substrate and a rear electrode disposed on the rear surface of the substrate; an air-bridge wiring disposed on the front surface of the substrate and connecting two of the lower electrodes; a via-hole penetrating through the semiconductor substrate in the vicinity of the two selected lower electrodes; and via-hole wiring disposed in the via-hole and connecting the selected lower electrodes to the rear electrode, the air-bridge wiring and the via-hole wiring being a continuous, unitary electroplated metal film. The air-bridge wiring and the via-hole wiring are directly connected without any intermediate wiring so that a junction of these wirings has no contact resistance. Further, since these wirings are continuous in the electroplated metal film, mechanical strength and reliability are improved.

In a method for producing a recessed gate field effect transistor including a recess in a semiconductor substrate and a gate electrode disposed in the recess, a photoresist film is applied to the semiconductor substrate and source and drain electrodes on the substrate, a first insulating film is formed on the photoresist film, a resist pattern, which has an opening for processing the first insulating film and the photoresist film are etched using the resist pattern as a mask to form an opening having a width increasing in the direction of the substrate, a second insulating film is formed on opposite side walls of the opening, the semiconductor substrate is etched using the opening narrowed by the second insulating film in the substrate to form a recess, the second insulating film is selectively removed by etching, gate metal is deposited on the photoresist and on the substrate in the recess, and unnecessary gate metal is removed by lifting-off the resist film.

Method for producing a recessed gate field effect transistor

Growing community of inventors

Tokyo, Japan

Hiroshi Matsuoka