Mitsubishi Gas Chemical Company, Inc.

Teac Corporation

Other

Mitsubishi Denki Kabushiki Kaisha

Tokyo Electron Limited

Nkk Corporation

Unitechno Corporation

Mitsubishi Gas Chemical Trading, Inc.

Hiroshi Matsunaga

Hiroshi Yoshida

Kenji Yamada

Kenji Shimada

Kojiro Abe

Masaru Ohto

Tomoko Fujii

Takuya Goto

Tetsuo Aoyama

Ryuji Sotoaka

Yoshiya Kimura

Hiroyuki Mori

Takayuki Niuya

Hideto Gotoh

Jun Makabe

Kazuhiko Ikeda

Fukusaburo Ishihara

Keiichi Tanaka

Takashi Okawa

Yoshiaki Sakai

Yutaka Matsuda

Yutaka Kanbara

Tomoo Tsujimoto

Mitsuaki Uesugi

Shinichi Aikawa

Kazuo Sano

Hidekazu Iwasaki

Shinichi Morita

Satoshi Tamai

Hideo Igarashi

Toshinari Aoki

Kimihiro Aoyama

Masami Harayama

Yoshihiro Okuno

Shun Fukazawa

Hedeharu Kurata

Kyoko Kamata

Tohru Hayashi

Hideo Kashiwagi

Takehiko Ohkubo

Yoichi Matsuju

Yukihide Naito

Ryuzo Shimizu

Yukio Fukushima

Yoshifumi Yasunaga

Yutaka Okawa

The problem of the present invention is to provide a roughening treatment method in which the surface of stainless steel is sufficiently roughened in an efficient manner with few steps, while maintaining good surface quality of the stainless steel after treatment. The above problem is solved by a roughening treatment method for stainless steel, which comprises a roughening treatment step that uses a first aqueous composition, and a post-treatment step that uses a second aqueous composition. Namely, the roughening treatment step is to roughen the surface of stainless steel containing copper or a metal having an ionization tendency larger than copper by bringing the first aqueous composition into contact with the surface, wherein the first aqueous composition comprises 0.1% to 20% by mass of hydrogen peroxide based on the total amount of the first aqueous composition, 0.25% to 40% by mass of copper ions based on the total amount of the first aqueous composition, and 1% to 30% by mass of halide ions based on the total amount of the first aqueous composition, wherein the post-treatment step is to perform a post-treatment by bringing the second aqueous composition into contact, under acidic conditions, with the surface of the stainless steel that has been treated in the roughening treatment step, and wherein the second aqueous composition comprises at least a peroxide.

Roughening treatment method for stainless steel surface, method for manufacturing roughened stainless steel, and aqueous composition used in said methods

An etching method for quickly removing a seed layer that is formed of titanium and/or a titanium alloy, while suppressing dissolution of other metals from copper wiring lines and the like, for continuous and stable processing; and a composition which is used for this etching method. The composition comprises, based on a total amount of the composition, 0.01 to 0.23% by mass hydrogen peroxide, 0.2 to 3% by mass fluoride, 0.0005 to 0.025% by mass of a halide ion other than a fluoride ion, and water. A method for using the composition to produce a substrate is also described.

Etching liquid for titanium and/or titanium alloy, method for etching titanium and/or titanium alloy with use of said etching liquid, and method for producing substrate with use of said etching liquid

Provided are an aqueous composition with which the surface of stainless steel is adequately roughened in an efficient manner with few steps, a method for roughening stainless steel, etc. The problem mentioned above is solved by an aqueous composition for roughening the surface of stainless steel, the aqueous composition including 0.1-20 mass % of hydrogen peroxide with reference to the total amount of the aqueous composition, 0.25-40 mass % of copper ions with reference to the total amount of the aqueous composition, and 1-30 mass % of halide ions with reference to the total amount of the aqueous composition.

Aqueous composition, method for roughening stainless steel surface in which same is used, roughened stainless steel, and method for manufacturing same

An etchant capable of selectively etching copper and a copper alloy while suppressing dissolution of nickel, tin, gold, and an alloy thereof. The etchant contains: (A) 5-10.5% by mass of hydrogen peroxide with respect to the total mass of the etchant; (B) 0.3-6% by mass of nitric acid with respect to the total mass of the etchant; (C) at least one nitrogen-containing 5-membered ring compound selected from triazoles and tetrazoles, which may have at least one substituent selected from a C1-6 alkyl group, an amino group, and a substituted amino group having a substituent selected from a C1-6 alkyl group and a phenyl group; and (D) (d1) one or more pH adjusters selected from an alkali metal hydroxide, ammonia, an amine, and an ammonium salt, (d2) a phosphoric acid compound, or (d3) a combination of (d1) and (d2).

Etchant for selectively etching copper and copper alloy, and method for manufacturing semiconductor substrate using said etchant

There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing at least one member selected from an imidazolium halide having an alkyl group containing 12, 14 or 16 carbon atoms, a pyridinium halide having an alkyl group containing 14 or 16 carbon atoms, an ammonium halide having an alkyl group containing 14, 16 or 18 carbon atoms, a betaine compound having an alkyl group containing 12, 14 or 16 carbon atoms, and an amine oxide compound having an alkyl group containing 14, 16 or 18 carbon atoms, and a method for producing a fine metal structure using the same.

Processing liquid for suppressing pattern collapse of fine metal structure and method for producing fine metal structure using same

There are provided a processing liquid that is capable of suppressing pattern collapse of a fine metal structure, such as a semiconductor device and a micromachine, and a method for producing a fine metal structure using the same. The processing liquid for suppressing pattern collapse of a fine metal structure, contains a phosphate ester and/or a polyoxyalkylene ether phosphate ester, and the method for producing a fine metal structure, uses the same.

Processing liquid for suppressing pattern collapse of fine metal structure, and method for producing fine metal structure using same

There are provided a processing liquid for suppressing pattern collapse of a microstructure which includes at least one compound selected from the group consisting of an imidazolium halide containing an alkyl group having 12, 14 or 16 carbon atoms, a pyridinium halide containing an alkyl group having 14 or 16 carbon atoms and an ammonium halide containing an alkyl group having 16 or 18 carbon atoms, and water; and a method for producing a microstructure formed of silicon oxide using the processing liquid.

Treatment liquid for inhibiting pattern collapse in microstructures, and microstructure manufacturing method using said treatment liquid

The objects of the present invention are to provide a treatment liquid able to inhibit pattern collapse in a microstructure such as a semiconductor device or a micromachine, as well as a method of manufacturing a microstructure using the same. Means to solve the problems is to treat a microstructure with a treatment liquid for inhibiting pattern collapse in a metal microstructure comprising an alkylphosphonic acid or salt thereof in which said alkyl moiety contains 6 to 18 carbon atoms, water, and a water soluble solvent.

Treatment liquid for inhibiting pattern collapse in microstructure and method of manufacturing microstructure using the same

According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.

Method for producing transistor

The present invention relates to a silicon etching solution which is used for selectively etching a dummy gate made of silicon in a process for producing a transistor including a laminate formed of at least a high dielectric material film and a metal gate containing hafnium, zirconium, titanium, tantalum or tungsten by the method of removing the dummy gate made of silicon to replace the dummy gate with the metal gate and which includes 0.1 to 40% by weight of at least one alkali compound selected from the group consisting of ammonia, a diamine and a polyamine represented by the general formula (1), 0.01 to 40% by weight of at least one polyhydric alcohol selected from the group consisting of specific polyhydric alcohols and a non-reducing sugar, and 40 to 99.89% by weight of water, and a process for producing a transistor using the silicon etching solution.

Silicon etching fluid and method for producing transistor using same

A composition for cleaning and corrosion inhibition which is used in a step of manufacturing a semiconductor device or a display device having a copper-containing metallic wiring is provided, wherein the corrosion inhibitor component is any one of pyrazole, a pyrazole derivative such as 3,5-dimethylpyrazole, a triazole derivative such as 1,2,4-triazole, an aminocarboxylic acid such as iminodiacetic acid or ethylenediaminedipropionic acid hydrochloride, or a disulfide compound such as diisopropyl disulfide or diethyl disulfide; and the cleaning agent component is any one of ammonium fluoride, tetramethylammonium fluoride, ammonium acetate, acetic acid, glyoxylic acid, oxalic acid, ascorbic acid, 1,2-diaminopropane or dimethylacetamide. Also, a method for manufacturing a semiconductor device or the like using the composition for cleaning and corrosion inhibition is provided.

Composition for cleaning and rust prevention and process for producing semiconductor element or display element

Provided are a residue removing liquid composition capable of completely removing a resist residue and a titanium (Ti)-derived residue that remains after dry etching and ashing in via hole formation in a production process for a semiconductor substrate having metal wiring of aluminum (Al) or an Al alloy, at a low temperature in a short time, not corroding parts of an interlayer insulating material, a wiring material and others, and a cleaning method for semiconductor devices using it. The residue removing liquid composition contains (A) ammonium fluoride, (B) methanesulfonic acid, (C) a carbon-carbon triple bond-having compound, (D) a water-soluble organic solvent, and (E) water, wherein the content of (A), (C), (D) and (E) in the residue removing liquid composition is from 0.005 to 2% by mass, from 0.1 to 10% by mass, from 60 to 75% by mass and from 5 to 38% by mass, respectively, and (B) is contained in an amount of from 0.9 to 1.5 times (by mol) the amount of (A).

Residue removing liquid composition and method for cleaning semiconductor element using same

A copper wiring material surface protective liquid for production of a semiconductor device is provided, containing an oxyalkylene adduct of an acetylenediol containing an acetylenediol having an oxyalkylene having 2 or 3 carbon atoms added thereto. A method for producing a semiconductor circuit device is provided, containing: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering method; then forming a copper wiring containing 80% by mass or more of copper thereon by a plating method; and flattening the wiring by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a copper wiring, the semiconductor substrate having an exposed surface of a copper wiring material being treated by making in contact with the copper wiring material surface protective liquid.

Copper wiring surface protective liquid and method for manufacturing semiconductor circuit

A copper wiring material surface protective liquid is provided that is used in production of a semiconductor circuit device containing copper wiring, and consists of an aqueous solvent and an acetylene alcohol compound containing at least 3-phenyl-2-propyn-1-ol. A method for producing a semiconductor circuit device is provided that contains: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering; then forming a copper film or a copper alloy film containing 80% by mass or more of copper thereon by a plating method; and flattening the film by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a flattened copper wiring, in which the semiconductor substrate having an exposed surface of a copper wiring material is treated by making in contact with the copper wiring material surface protective liquid.

Liquid for protecting copper wiring surface and method for manufacturing semiconductor circuit element

A cleaning composition of a semiconductor device for laminating an organosiloxane-based thin film and a photoresist layer in this order on a substrate having a low dielectric interlayer insulation film and a copper wiring or a copper alloy wiring, then applying selective exposure and development treatments to the subject photoresist layer to form a photoresist pattern, subsequently applying a dry etching treatment to the organosiloxane-based thin film and the low dielectric interlayer insulation film while using this resist pattern as a mask and then removing the organosiloxane-based thin film, a residue generated by the dry etching treatment, a modified photoresist having been modified by the dry etching treatment and an unmodified photoresist layer located in a lower layer than the modified photoresist, the cleaning composition containing from 15 to 20% by mass of hydrogen peroxide, from 0.0001 to 0.003% by mass of an amino polymethylene phosphonic acid, from 0.02 to 0.5% by mass of potassium hydroxide and water and having a pH of from 7.5 to 8.5, is provided. Also, a method for manufacturing a semiconductor device using the subject cleaning composition is provided.

Cleaning composition and process for producing semiconductor device

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Tokyo, Japan

Hiroshi Matsunaga