Sharp Kabushiki Kaisha Corporation

Semiconductor Energy Laboratory Co., Ltd.

Hiroshi Matsukizono

Takuya Matsuo

Yosuke Kanzaki

Kenichi Okazaki

Shigeyasu Mori

Junichi Koezuka

Yoshitaka Yamamoto

Yohsuke Kanzaki

Yukinori Shima

Takao Saitoh

Yutaka Takamaru

Keisuke Ide

Shunpei Yamazaki

Masayuki Sakakura

Seiji Kaneko

Tadayoshi Miyamoto

Masatoshi Yokoyama

Akihiro Oda

Shogo Murashige

Yujiro Takeda

Masatomo Honjo

Hiroyuki Miyake

Tomohiro Kimura

Masahiro Takahashi

Toshinari Sasaki

Hiroyuki Ogawa

Yoshifumi Tanada

Yasuharu Hosaka

Kohhei Tanaka

Naoya Sakamoto

Masahiro Katayama

Masao Moriguchi

Yasuyoshi Kaise

Tsutomu Murakawa

Mutsumi Nakajima

Takahiro Sato

Manabu Sato

Shunsuke Koshioka

Takayuki Cho

Yudai Takanishi

Takatsugu Kusumi

Yoshimizu Moriya

Makoto Kita

Yoshiyuki Itoh

A display device according to the disclosure includes a substrate, a first transistor provided on the substrate, and a second transistor provided on the substrate, not overlapping the first transistor. The first transistor includes a polycrystalline silicon layer provided on the substrate, a first insulating film provided on the polycrystalline silicon layer, a first gate electrode provided on the first insulating film, and a second insulating film provided on the first gate electrode. The second transistor includes an oxide semiconductor layer provided on the first insulating film, a third insulating film provided on the oxide semiconductor layer, and a second gate electrode provided on the third insulating film. The first and third insulating films are SiOx films. The second insulating film is an SiNx film including hydrogen, and is provided overlapping the polycrystalline silicon layer, and is provided not overlapping the oxide semiconductor layer.

Display device including thin film transistors performing different functionality having different materials

Display device and production method for display device

An active matrix substrate of an embodiment of the present invention includes a substrate and a plurality of oxide semiconductor TFTs supported on the substrate. Each oxide semiconductor TFT includes a lower gate electrode provided on the substrate, a gate insulating layer covering the lower gate electrode, an oxide semiconductor layer provided on the gate insulating layer, a source electrode which is in contact with the source contact region of the oxide semiconductor layer, a drain electrode which is in contact with the drain contact region of the oxide semiconductor layer, an insulating layer covering the oxide semiconductor layer, the source electrode and the drain electrode, and an upper gate electrode provided on the insulating layer. When viewed in a normal direction of the substrate, the upper gate electrode does not overlap a first electrode which is one of the source electrode and the drain electrode, and a second electrode which is the other of the source electrode and the drain electrode does not overlap the lower gate electrode.

Active-matrix substrate and display device

An active matrix substrate according to an embodiment of the present invention includes: a substrate; a plurality of first TFTs supported by the substrate and provided in a non-displaying region; and a peripheral circuit including the plurality of first TFTs. Each first TFT includes: a first gate electrode provided on the substrate; a first gate insulating layer covering the first gate electrode; a first oxide semiconductor layer opposed to the first gate electrode via the first gate insulating layer; and a first source electrode and a first drain electrode connected to a source contact region and a drain contact region of the first oxide semiconductor layer. Each first TFT has a bottom contact structure. A first region of the first gate insulating layer that overlaps the channel region has a thickness which is smaller than a thickness of a second region of the first gate insulating layer that overlaps the source contact region and the drain contact region.

Active matrix substrate and method of manufacturing same

An active matrix substrate includes: a substrate (); a peripheral circuit including a plurality of first TFTs (); and a plurality of second TFTs (), wherein each of the first and second TFTs () includes: a gate electrode (A,B); a gate insulating layer (); an oxide semiconductor layer (A,B) including a channel region (Ac,Bc), a source contact region (As,Bs) and a drain contact region (Ad,Bd), wherein the source contact region and the drain contact region are located on opposite sides of the channel region; a source electrode (A,B) that is in contact with the source contact region and a drain electrode (A,B) that is in contact with the drain contact region; the oxide semiconductor layer of the first TFTs and the second TFTs is formed from the same oxide semiconductor film; a carrier concentration in the channel regions (Ac) of the first TETs is higher than a carrier concentration in the channel regions (Bc) of the second TETs.

Active matrix substrate and method for producing same

An active matrix substrate () according to an embodiment of the present invention has a display region (DR) defined by a plurality of pixel regions (P) arranged in a matrix pattern, and a peripheral region (FR) located around the display region. The active matrix substrate includes a substrate (), a first TFT () supported on the substrate and including a crystalline silicon semiconductor layer (), and a second TFT () supported on the substrate and including an oxide semiconductor layer (). The first TFT and the second TFT each have a top gate structure. The oxide semiconductor layer is located below the crystalline silicon semiconductor layer.

Active matrix substrate, liquid crystal display device, organic electroluminescent display device and method for producing active matrix substrate

An active matrix substrate () has multiple pixel areas. At least one pixel area includes a pixel TFT (), a pixel electrode (), a first circuit TFT (), and drive circuit wiring lines (Lto L) that are connected to the first circuit TFT. The pixel TFT () and the first circuit TFT () are oxide semiconductor TFTs. The pixel electrode () is formed from an upper transparent conductive film. The drive circuit wiring line includes a transparent wiring line portion (Land L) that is formed from a lower transparent conductive film which is positioned closer to a substratethan the upper transparent conductive film. At least one of a source electrode () and a drain electrode () of the first circuit TFT () is formed from the lower transparent conductive film.

Active matrix substrate having plurality of circuit thin film transistors and pixel thin film transistors

A semiconductor apparatus () is provided with: a substrate (); and a thin-film transistor (). The thin-film transistor has: an oxide semiconductor layer () that includes a channel region () and first and second contact regions (); a gate insulating layer () that is provided so as to cover the oxide semiconductor layer; a gate electrode () that is provided on the gate insulating layer and that overlaps the channel region via the gate insulating layer; a source electrode () that is electrically connected to the first contact region; and a drain electrode () that is electrically connected to the second contact region. This semiconductor apparatus is further provided with a light-shielding layer () arranged between the oxide semiconductor layer and the substrate, and the channel region is aligned to the part of the light-shielding layer overlapping the oxide semiconductor layer.

Semiconductor apparatus and method for manufacturing semiconductor apparatus

A semiconductor device has a top-gate structure resistant to creation of parasitic capacitance between a low-resistance region formed in a semiconductor layer and a gate electrode. A TFT () has a low-resistance region, a portion of which has a first length (L) ranging from a first position (P) corresponding to an end of a gate insulating film to a region below a gate electrode (), and the first length is substantially equal to a second length (L) ranging from the first position (P) to a second position (P) corresponding to an end of the gate electrode (). Thus, the overlap between the gate electrode () and either a source region () or a drain region () can be reduced, resulting in diminished parasitic capacitance.

Semiconductor device having low resistance source and drain regions

An active matrix substrate () includes: a plurality of pixel regions arranged on a substrate () in a matrix pattern extending in a first and a second direction; a plurality of gate lines G extending in the first direction; and a plurality of source lines S extending in the second direction, the active matrix substrate having a display area () including a plurality of pixel regions and a non-display area () located in a periphery of the display area, wherein: the pixel regions each include a thin-film transistor () including an oxide semiconductor layer, and a pixel electrode () formed integral with a drain electrode (); gate electrode () and the gate lines G are made of a first transparent conductive film; the drain electrode () and the pixel electrode () are made of a second transparent conductive film and provided in the non-display area (); and the active matrix substrate further includes a plurality of gate signal lines made of a metal film and a first connecting portion that connects each of the gate lines G to one of the gate signal lines.

Active matrix substrate and method for manufacturing same, display device using active matrix substrate

A semiconductor device includes, a plurality of oxide semiconductor TFTs including a first gate electrode, a first insulating layer in contact with the first gate electrode, an oxide semiconductor layer opposing the first gate electrode via the first insulating layer, a source electrode and a drain electrode which are connected with the oxide semiconductor layer, and an organic insulating layer covering only some of the plurality of oxide semiconductor TFTs, wherein the plurality of oxide semiconductor TFTs include a first TFT which is covered with the organic insulating layer and a second TFT which is not covered with the organic insulating layer, and the second TFT includes a second gate electrode opposing the oxide semiconductor layer via a second insulating layer, the second gate electrode being arranged to overlap with at least a portion of the first gate electrode with the oxide semiconductor layer interposed therebetween.

Semiconductor device including a plurality of thin-film transistors with one thin-film transistor including two gate electrodes

A semiconductor device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; an oxide semiconductor film including a channel region disposed over the gate electrode through the gate insulating layer and lowered-resistance region contacting the channel region; a source electrode and a drain electrode on the channel region; a first insulating film covering at least the channel region and including a contact hole that exposes the lowered-resistance region; and a second insulating film having reducing characteristics and disposed above the first insulating film across the contact hole, the second insulating film contacting the lowered-resistance region inside the contact hole.

Semiconductor device and liquid crystal display device

To provide a novel semiconductor device in which a reduction in channel length is controlled. The semiconductor device includes an oxide semiconductor layer having a crystal part, and a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer. The oxide semiconductor layer includes a channel formation region and an n-type region in contact with the source electrode layer or the drain electrode layer. The crystal orientation of the crystal part is different between the channel formation region and the n-type region.

Semiconductor device and display device comprising an oxide semiconductor channel region having a different crystal orientation than source/drain regions

A semiconductor device () includes a thin-film transistor () including a gate electrode (), source and drain electrodes (), and an oxide semiconductor layer (), and a source bus line (). The source electrode, the source bus line and the drain electrode include a first metallic element and the oxide semiconductor layer includes a second metallic element. When viewed along a normal to its substrate, at least respective portions of the source electrode, the source bus line, and the drain electrode overlap with the oxide semiconductor layer. A low reflecting layer () which includes the first and second metallic elements and which has a lower reflectance to visible radiation than the source electrode has been formed between the source electrode and the oxide semiconductor layer, between the source bus line and the oxide semiconductor layer, and between the drain line and the oxide semiconductor layer.

Liquid crystal display device having a low reflecting layer made of the same material as the source electrode and the oxide semiconductor layer

A TFT substrate (A) of a liquid crystal display panel includes: an organic interlayer insulating layer () covering a TFT; a first transparent electrically-conductive layer () provided in the first region of a surface of the organic interlayer insulating layer (); and an inorganic dielectric layer () covering the first transparent electrically-conductive layer () and provided in a second region of the surface of the organic interlayer insulating layer () which is different from the first region, the inorganic dielectric layer () containing SiN, wherein an arithmetic mean roughness Ra of the first region and the second region of the surface of the organic interlayer insulating layer () is not less than 3.45 nm and not more than 5.20 nm.

Liquid crystal display panel and method for producing same

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Osaka, Japan

Hiroshi Matsukizono