Murata Manufacturing Co., Ltd.

Hiroshi Matsubara

Masanori Kato

Syunsuke Kido

Masatomi Harada

Takeshi Kagawa

Yukiteru Sugaya

Junko Izumitani

Keisuke Nishio

Masato Yoshida

Tomohiro Nagai

Minoru Iwanaga

Masaki Takeuchi

Nobuhiro Ishida

Hidemori Akagi

Masaki Tada

Hideaki Ooe

Masutaro Nemoto

A semiconductor device is provided that includes a substratewith first and second opposing main surfaces, a circuit layer disposed on the first main surface, and a first resin body on a surface of the circuit layer opposite from the substrate. The circuit layer includes first and second electrode layers on a side of the semiconductor substrate, a dielectric layer disposed between the electrode layers, a first outer electrode electrically connected to the first electrode layer and extended to the surface of the circuit layer, and a second outer electrode electrically connected to the second electrode layer and extended to the surface of the circuit layer. The first resin body is between the first and second outer electrodes in a plan view, and in sectional view, a tip end of the first resin body is positioned higher than tip ends of the first and second outer electrodes.

Semiconductor device and module

A capacitor that includes a substrate; a capacitor structure including a lower electrode on the substrate, a dielectric film on the lower electrode and having a via hole, and an upper electrode on the dielectric film; a first terminal electrode in the via hole and electrically connected to the lower electrode; and a second terminal electrode electrically connected to the upper electrode. The width of the via hole of the dielectric film is less than or equal to twice the film thickness of the first terminal electrode.

Capacitor

A semiconductor device includes a semiconductor substrate having first and second main surfaces that oppose each other in a thickness direction, and a circuit layer disposed on the first main surface. The circuit layer includes a first electrode layer on a side of the semiconductor substrate, a second electrode layer that faces the first electrode layer, a dielectric layer disposed between the electrode layers, and a first outer electrode electrically connected to the first electrode layer through an opening in the dielectric layer. An end portion of the dielectric layer on a side of the first region is in contact with the first electrode layer, and in the dielectric layer, a size of the end portion in the thickness direction is smaller than a size of an inter-electrode portion between the first and second electrode layers in the thickness direction.

Semiconductor device and capacitance device

A capacitor that includes a substrate having a surface; a lower electrode opposing the surface of the substrate; a dielectric film on the lower electrode; an upper electrode on the dielectric film; a protective layer on the lower electrode, the dielectric film, and the upper electrode, the protective layer defining a through-hole exposing at least one of the lower electrode and the upper electrode; at least one protrusion in the through-hole; and an outer electrode covering the through-hole and the at least one protrusion.

Capacitor having a through-hole exposing an electrode and at least one protrusion in the through-hole

A multiplexer includes filters and low pass filters. A second frequency band and a third frequency band are partially different. A first frequency band does not overlap the second frequency band and the third frequency band. One end of the filter is connected to a common terminal and the other end is connected to an input/output terminal. The low pass filter is connected in one end to the common terminal and in the other end to one end of the filter. The other end of the filter is connected to one end of the low pass filter. The other end of the low pass filter is connected to the input/output terminal. One end of the filter is connected to a node between the other end of the low pass filter and one end of the filter and the other end of the filter is connected to the input/output terminal.

Multiplexer and communication device

In a radio-frequency module, a hybrid filter includes an acoustic wave filter including at least one acoustic wave resonator, an inductor having a winding portion, and a capacitor. A plurality of outer electrodes of the acoustic wave filter includes a first input and output electrode connected to a first signal terminal, a second input and output electrode connected to a second signal terminal, and a ground electrode connected to a ground terminal. The inductor is disposed on a first major surface of a mounting substrate and is adjacent to the acoustic wave filter in plan view in a thickness direction of the mounting substrate. When viewed in a direction of a winding axis of the winding portion of the inductor, an inner part of the winding portion in the inductor does not overlap any of the first input and output electrode, the second input and output electrode, and ground electrode.

Radio-frequency module and communication device

A filter device having a pass band and a stop band on a lower frequency side than the pass band includes a filter having a pass band including the pass band, a series arm resonator connected in series to the filter, a first inductor directly connected in series to the series arm resonator, and a parallel arm resonator connected between a node on a path connecting the filter and the series arm resonator and the ground. The parallel arm resonator constitutes a resonance circuit having a resonant frequency at which an attenuation pole corresponding to a high frequency end of the first stop band, and the series arm resonator and the inductor constitute a resonance circuit having an anti-resonant frequency on a lower frequency side than the pass band and having a sub-resonant frequency higher than a resonant frequency of the resonance circuit.

Filter device and multiplexer

A first filter is a hybrid filter including an acoustic wave filter, a plurality of first inductors, and a plurality of first capacitors. A high frequency module further includes a metal electrode layer covering at least part of a resin layer and at least part of an outer peripheral surface of a mounting substrate. Among a plurality of inductors including the plurality of first inductors of the first filter and a plurality of second inductors of a second filter, at least one inductor (the second inductor) is a circuit element including a conductor pattern portion formed in the mounting substrate. The shortest distance between the outer peripheral surface of the mounting substrate and a signal terminal (a third signal terminal) connected to the circuit element is longer than the shortest distance between the outer peripheral surface of the mounting substrate and the circuit element.

High frequency module and communication apparatus

A high-frequency module includes a mounting substrate, a filter, and a common inductor. The mounting substrate includes a first main surface and a second main surface facing each other. The filter includes series arm resonators and parallel arm resonators, and is disposed on the first main surface. The mounting substrate includes a ground terminal on the second main surface. A first end of the common inductor is connected to all of the parallel arm resonators. A second end of the common inductor is connected to the ground terminal.

High-frequency module and communication device

A multiplexer includes a first matching circuit having one end connected to a common terminal; a first filter that has one end connected to the other end of the first matching circuit and the other end connected to a first terminal; a second matching circuit having one end connected to the common terminal; a second filter that has one end connected to the other end of the second matching circuit and the other end connected to a second terminal; and a third filter that has one end connected to the common terminal and the other end connected to a third terminal. The first matching circuit includes a first inductor connected on a first signal path in the first matching circuit. The second matching circuit includes a second inductor connected between a second signal path in the second matching circuit and ground.

Multiplexer and communication apparatus

A filter circuit that secures the steepness from a pass range to an attenuation range while maintaining a wide-band transmission characteristic and a filter device including this filter circuit are formed. A filter circuit includes a first filter and a second filter. The first filter is a filter including an LC circuit in which a first frequency band is a pass band and a frequency band not higher than the first frequency band is an attenuation band. The second filter is a filter that attenuates a second frequency band within the first frequency band by using an attenuation pole produced by a resonance or an antiresonance of an acoustic wave resonator. Further, the first filter is placed closer to an antenna terminal than the second filter.

Filter circuit and filter device

A capacitor that includes a substrate, a lower electrode on the substrate, a dielectric film on the lower electrode, an upper electrode on a part of the dielectric film, a protective layer that covers the lower electrode and the upper electrode, and an external electrode that penetrates the protective layer. The external electrode is formed only in a region defined by a periphery of the upper electrode in a plan view of the capacitor viewed from an upper surface thereof towards the substrate.

A plurality of capacitors and a holding body constructed to hold the plurality of capacitors. Each of the plurality of capacitors includes a semiconductor substrate, a first electrode layer, a dielectric layer, a second electrode layer, and an outer electrode. Among a first capacitor and a second capacitor of the plurality of capacitors, the second capacitor has a shape different from a shape of the first capacitor in at least one of the first electrode layer, the second electrode layer, and the outer electrode.

Capacitor cluster having capacitors with different shapes

A filter includes a first input/output electrode and the second input/output electrode, and is arranged on a first main surface of a mounting substrate. The mounting substrate includes a first land electrode, a second land electrode, a ground terminal, and a plurality of via conductors. The first land electrode is connected to the first input/output electrode. The second land electrode is connected to the second input/output electrode. The ground terminal is located closer to a second main surface side than the first main surface in a thickness direction of the mounting substrate. The plurality of via conductors is arranged between the first main surface and the second main surface, and is connected to the ground terminal. The plurality of via conductors is located between the first land electrode and the second land electrode in a plan view from the thickness direction of the mounting substrate.

High-frequency module, high-frequency circuit, and communication device

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface opposed to each other, and a porous metal oxide film on a side of the first main surface of the semiconductor substrate, the porous metal oxide film having a plurality of pores. The semiconductor substrate has a connection electrically connected to the porous metal oxide film, and the semiconductor substrate is configured to provide a power supply path from the second main surface to the connection on the first main surface.

Semiconductor device having a porous metal oxide film and a semiconductor substrate with a connection electrically connected to the porous metal oxide film

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Nagaokakyo, Japan

Hiroshi Matsubara