Hitachi-high-technologies Corporation

Mitsubishi Denki Kabushiki Kaisha

Renesas Electronics Corporation

Hitachi, Ltd.

Renesas Technology Corp.

Seiko Epson Corporation

Yamashin-filter Corp.

Renesas Electronics Corportion

Hiroshi Makino

Koichiro Ishibashi

Hisaya Murakoshi

Koji Nii

Hirofumi Shinohara

Shigeki Obayashi

Hiroyuki Shinada

Kenji Tanimoto

Hideo Todokoro

Yuko Sasaki

Masaki Hasegawa

Zhaohui Cheng

Hikaru Koyama

Yuji Kasai

Yutaka Kaneko

Mari Nozoe

Hideyuki Kazumi

Takanori Ninomiya

Hiroya Ohta

Atsuko Takafuji

Kimio Ueda

Taku Ninomiya

Ryuichi Funatsu

Sayaka Tanimoto

Yuzuru Mizuhara

Miki Isawa

Mitsugu Sato

Toshifumi Honda

Takashi Hiroi

Hiroaki Suzuki

Minoru Yamazaki

Yasunobu Nakase

Yoshihiro Anan

Muneyuki Fukuda

Hiroshi Suzuki

Makoto Suzuki

Shigeki Ohbayashi

Koichiro Mashiko

Takashi Ohshima

Naomasa Suzuki

Natsuki Tsuno

Momoyo Enyama

Hiromi Notani

Toshiyuki Yokosuka

Noritsugu Takahashi

Hiroshi Toyama

Tsutomu Yoshimura

Michio Hatano

Yoshinori Momonoi

Hirohito Okuda

Tomoyasu Shojo

Akihiro Saito

Yoshiteru Nishimura

Chahn Lee

Hiroyuki Morinaka

Jingo Nakanishi

Taketo Honzawa

A driving device includes a motor, a wave gear device including a wave generator having first thickness, a flex spline, and a circular spline having thickness larger than the first thickness, a housing functioning as a housing of the motor and including a flange, and an oil seal fixed to the inner side of the flange and extending along the outer circumference of the shaft. The wave generator is set closer to the opposite direction of the flange to configure an internal space with the members. When the internal space is filled with grease, a distance between the oil seal and the wave generator is set smaller than distances among the other members.

Driving device and assembling method for driving device

A fine fiber production method and a fine fiber production apparatus are provided. The fine fiber production method includes: discharging a flowable polymer compound from a discharge port provided at an extruder; forming fibers having a fiber diameter of from 50 nm to 15 &#x3bc;m by spraying, in a direction intersecting with a discharge direction of the flowable polymer compound, a pressurized gas from an air nozzle to the discharged flowable polymer compound, the air nozzle including a temperature control member and a spindle-shaped nozzle or a De Laval nozzle; and collecting the fibers using a collection member provided downstream in a gas spraying direction.

Fine fiber producing method and fine fiber producing apparatus

In a motor according to an aspect of the invention, a brake includes a first clamp and a second clamp, a member to be clamped disposed between the first clamp and the second clamp, a first fixing member configured to fix the member to be clamped to a shaft, and a driving section configured to bring the first clamp and the second clamp into contact with the member to be clamped. The first clamp includes a first contact section. The second clamp includes a second contact section. A first housing hole is provided in a housing. The driving section includes a power cable drawn out to the outside of the housing via the first housing hole. The first housing hole overlaps the first contact section, the second contact section, the member to be clamped, and the first fixing member in a plan view from a first radial direction.

Motor and robot

Cell power supply lines are arranged for memory cell columns, and adjust impedances or voltage levels of the cell power supply lines according to the voltage levels of bit lines in the corresponding columns, respectively. In the data write operation, the cell power supply line is forced into a floating state according to the bit line potential on a selected column and has the voltage level changed, and a latching capability of a selected memory cell is reduced to write data fast. Even with a low power supply voltage, a static semiconductor memory device that can stably perform write and read of data is implemented.

Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage

An objective of the present invention is to provide a charged particle beam device with which information based on a charged particle which is discharged from a bottom part of high-aspect structure is revealed more than with previous technology. To achieve the objective, proposed is a charged particle beam device comprising: a first orthogonal electromagnetic field generator which deflects charged particles which are discharged from a material; a second orthogonal electromagnetic field generator which further deflects the charged particles which are deflected by the first orthogonal electromagnetic field generator; an aperture forming member having a charged particle beam pass-through aperture; and a third orthogonal electromagnetic field generator which deflects the charged particles which have passed through the aperture forming member.

Charged particle beam device

An object of the invention is to provide a scanning electron microscope which forms an electric field to lift up, highly efficiently, electrons discharged from a hole bottom or the like even if a sample surface is an electrically conductive material. To achieve the above object, according to the invention, a scanning electron microscope including a deflector which deflects a scanning position of an electron beam, and a sample stage for loading a sample thereon, is proposed. The scanning electron microscope includes a control device which controls the deflector or the sample stage in such a way that before scanning a beam on a measurement target pattern, a lower layer pattern situated in a lower layer of the measurement target pattern undergoes beam irradiation on another pattern situated in the lower layer.

Scanning electron microscope

Provided is a technique to automatize a synthesis function of signal charged particles having different energies. A charged particle beam apparatus includes: a charged particle source configured to irradiate a sample with a primary charged particle ray; a first detector configured to detect a first signal electron having first energy from signal charged particles generated from the sample; a second detector configured to detect a second signal electron having second energy from signal charged particles generated from the sample; a first operation part configured to change a synthesis ratio of a signal intensity of the first signal electron and a signal intensity of the second signal electron and to generate a detected image corresponding to each synthesis ratio; a second operation part configured to calculate a ratio of signal intensities corresponding to predetermined two areas of the detected image generated for each synthesis ratio; and a third operation part configured to determine a mixture ratio to be used for acquisition of the detected image on a basis of a change of the ratio of signal intensities.

Charged particle ray apparatus and pattern measurement method

This charged particle beam microscope is characterized by being provided with selection means () for a measurement processing method for detected particles () and by this means selecting a different measurement processing method for a scanning region with a large number of secondary electrons () emitted from a sample () and for a region with a small number of secondary electrons. Thus, in sample scanning using a charged particle beam microscope, an image in which the contrast of bottom holes and channel bottoms with few emitted secondary electrons is emphasized and images that emphasize shadow contrast can be acquired in a short period of time.

Charged particle beam microscope

The charged particle beam apparatus having an opening formation member formed with an opening for passage of a charged particle beam emitted from a charged particle source, and either a detector adapted to detect charged particles having passed through the passage opening or a detector adapted to detect charged particles resulting from bombardment on another member of the charged particles having passed through the opening, comprises an aligner for aligning charged particles discharged from the sample and a control unit for controlling the aligner, wherein the control unit controls the aligner to cause it to shift trajectories of the charged particles discharged from the sample so that length measurement may be executed on the basis of detection signals before and after the alignment by the aligner.

Charged particle beam apparatus

It has been difficult to obtain pattern contrast required for inspecting a specific layer of a circuit pattern in a charged particle beam apparatus which inspects, by using a charged particle beam, the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process. At the time of inspecting the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process by using a charged particle beam emitted from a charged particle source (), the wafer arranged on a holder () is irradiated with light in wavelength ranges different from each other from a light irradiation system (), and at the same time, the wafer is irradiated with a charged particle beam. Thus, contrast of an image is improved and inspection is performed with high sensitivity.

Growing community of inventors

Kokubunji, Japan

Hiroshi Makino