Renesas Electronics Corporation

Renesas Technology Corp.

Renesas Eastern Japan Semiconductor, Inc.

Hitachi High-tech Instruments Company, Ltd.

Fasford Technology Co., Ltd.

Nkk Corporation

Hiroshi Maki

Tatsuyuki Okubo

Masayuki Mochizuki

Yukio Tani

Tsuyoshi Yokomori

Yoshiaki Makita

Eiji Wada

Naoki Okamoto

Ryuichi Takano

Hideharu Kobashi

Kazuhiro Seiki

Keisuke Nadamoto

Akira Saito

Yuki Nakui

Haruhiko Fukasawa

Takehito Mochizuki

Makoto Ise

Takashi Wada

Noriyuki Oroku

Seigo Ando

Kenichi Iwanaga

Yasuhiro Matsufuji

Hideyuki Suga

Masaki Takenaka

Mamoru Inaba

Yoshihide Ishii

Susumu Takagi

Takashi Yamagami

Nobuhisa Nakajima

Fukashi Tanaka

Atsuhisa Takeoshi

A semiconductor manufacturing apparatus includes a thrust-up unit having a plurality of blocks in contact with a dicing tape, a head having a collet absorbing the die and capable of being moved up and down, and a control section controlling the operation of the thrust-up unit and the head. The thrust-up unit can operate each of the plurality of blocks independently. The control section configures the thrust-up sequences of the plurality of blocks in a plurality of steps, and controls the operation of the plurality of blocks on the basis of a time chart recipe capable of setting the height and the speed of the plurality of blocks for each block and in each step.

Semiconductor manufacturing apparatus and manufacturing method for semiconductor device

A bonding method of a die bonder with a single conveyance lane and a single bonding head, or a plurality of conveyance lanes and a plurality of bonding heads includes the steps of generating a classification map of class dies with different electric properties on the wafer, which are classified in accordance with a plurality of grades, picking up the die from the wafer, bonding the die onto a substrate or the die using a bonding head, conveying a class substrate corresponding to the class die on the conveyance lane in a unit of the class substrate, and further bonding the class die to the corresponding class substrate based on the classification map.

Die bonder and bonding method

An object of the present invention is to provide a collet cleaning method and a die bonder using the same in which a collet can be cleaned without adding a new unit, and foreign substances with 5 high adhesive power can be reliably removed without scattering the foreign substances. A die bonder includes a pickup device, a bonding head unit having a collet that absorbs dies from a wafer at the timing of lifting of the pickup device, and a control unit that controls the pickup deviceand the bonding head unit. The collet is moved to a position of a dicing tape at which no dies of the wafer held by a wafer ring exist to be brought into contact with the adhesive surface of the dicing tape, so that foreign substances attached to the tip end of the collet are removed.

Collet cleaning method and die bonder using the same

A die bonder and a bonding method are disclosed which make it possible to provide high-quality products, particularly even if a die is rotated through predetermined degrees relative to an already-bonded die and then laminated. In the die bonder and bonding method in which a die is picked up from a wafer by a pick-up head which then places the die on an alignment stage, and the die is picked up from the alignment stage by a bonding head which then bond the die onto a substrate or an already-bonded die, a posture of the die is rotated through predetermined degrees on a plane parallel to a plane on which the bonding is performed, before the bonding head picks up the die from the alignment stage.

The invention has an object to provide a foreign substance removing device that is capable of quickly and efficiently cleaning substrate surfaces regardless of the size thereof and preventing readhesion of once removed foreign substances as well as to provide a die bonder equipped with the same. The foreign substance removing device of the invention includes: a pickup device to which a dicing film carrying dies thereon is fixed; and a collet for picking up a die separated from the dicing film and placing the die on a substrate having an adhesive applied thereon, and operates to remove foreign substances on the substrate in preparation for application of the adhesive onto the substrate. The foreign substance removing device includes a cleaning nozzle integrating an air outlet orifice and an air inlet orifice.

Foreign substance removing device and die bonder equipped with the same

With a die bonder or a bonding method, the die is adsorbed by the collet, the dicing tape to which the die is adsorbed is thrust up, the die adsorbed by the collet, and thrust up is peeled from the dicing tape, and the peeled die is bonded to the substrate. When the decrease in the air leak flow rate through the gap between the collet and the die upon the thrust up is smaller than the decrease in the normal peel by a predetermined amount, it is judged that a deflection occurs in the die.

A technique with which die bonding can be carried out without forming a void in a bond area is provided. A vacuum supply line that connects to a vacuum chuck hole formed in the bottom face of a vacuuming collet and supplies the vacuuming collet with reduced pressure for vacuum chucking a chip is constructed of two systems. That is, the vacuum supply line is so structured that a first pipe and a second pipe connect to the vacuuming collet. The first pipe supplies the vacuuming collet with a vacuum that provides suction force when a chip is unstuck from a dicing tape and transported to a mounting position on a wiring substrate. The second pipe supplies the vacuuming collet with a vacuum that provides suction force when a chip is mounted over a wiring substrate. The intensity of the vacuum (suction force) supplied to the vacuuming collet is controlled by opening or closing valves respectively installed in the pipes.

Fabrication method of semiconductor device

Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, then the matrix substrate is disposed above the semiconductor chips on the first heating stage, subsequently the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding while heating the chips directly by the first heating stage, thereafter the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then on the second heating stage the semiconductor chips are thermocompression-bonded to the matrix substrate while being heated directly by the second heating stage.

Fabrication method of semiconductor integrated circuit device

RFID tags are attached to tools of a preform head, a bonding head, and a push-up unit, and information related to each tool such as a dimension of a processing-target die is stored into the RFID tags. When a tool is mounted, an operator inputs manufacturing conditions related to the tool. When information related to the tool read from the RFID tag by an RFID reader/writer and the manufacturing conditions related to the tool do not match each other, a message about wrong mounting of the tool is displayed on a monitor. Further, an operation history of the tool is written into the RFID tag by the RFID reader/writer when the production is completed. The operation history is read when the next production is started, and if the values of the operation history exceed predetermined numbers of times, a message is displayed on the monitor.

Tool management method of die bonder and die bonder

A technique is provided which can exactly recognize a chip to be picked up when picking up the chip from a wafer sheet in a process of die bonding a thin chip. A camera is coupled to one end of a lens barrel, an objective lens is attached to an opposite end of the lens barrel, and an image of a main surface of a chip is photographed through the objective lens. A surface-emitting lighting unit, a diffusing plate and a half mirror are internally provided between the lens barrel and the chip. Further, another lens barrel having a coaxial drop lighting function of radiating light to the main surface of the chip along the same optical axis as that of the camera is disposed.

An object of the present invention is to provide a pickup device that can securely peel a die or to provide a reliable die bonder or a pickup method using the pickup device. To achieve the object, the present invention is provided with a characteristic that when a die to be peeled out of plural dies (semiconductor chips) applied to a dicing film is thrust up and is peeled from the dicing film, the dicing film in a predetermined part in a circumference of the die is thrust up and a peeling starting point is formed, the dicing film in a part except the predetermined part is thrust up, and the die is peeled from the dicing film.

Die bonder, pickup method, and pickup device

In a chip pick-up process after dicing in an assembly process during manufacture of a semiconductor integrated circuit device it is an important subject to diminish a pick-up defect caused by the reduction in thickness of each chip which is proceeding in quick tempo. Particularly, bending of the chip peripheral portion caused by a peeling operation is very likely to induce cracking and chipping of the chip. In the present invention, to solve these problems, in case of peeling a chip from a dicing tape (adhesive tape) or the like while vacuum-chucking the chip by a chucking collet, the flow rate of a vacuum chucking system in the chucking collet is monitored to check a bent state of the chip before complete separation of the first chip from the adhesive tape.

Manufacturing method for semiconductor integrated device

While an adhesive layer is provided over the rear surface of a semiconductor chip in die bonding, a lamination processing (main pressure bonding) is necessary for securing the adhesive state of the adhesive layer after the die bonding process (temporary pressure bonding). In this case, typically the hardening of the adhesive is developed by applying heat while pressing down the rear surface of the chip from above with a pressurization member. It has become clear that various problems exist in the lamination processing of the laminate chips by such a mechanical pressurization method as the chip becomes thinner. That is, the problems include chip damage at a part in an overhang state, a chip position shift caused by bending and non-uniform pressurization, and the like. One invention of the present application is to perform the lamination processing by static gas pressure after laminating and temporarily pressure-bonding the plurality of semiconductor chips over a circuit substrate in the die bonding process of a substrate product.

Growing community of inventors

Tokyo, Japan

Hiroshi Maki