Semiconductor Energy Laboratory Co., Ltd.

Schott Glass Technologies (Suzhou) Co. Ltd.

Hiroshi Kuroki

Hongyong Zhang

Michiko Takei

Rainer Liebald

Tatsuya Ohori

Junming Xue

Pengxiang Qian

Yunfei Hou

A low CTE boro-aluminosilicate glass having a low brittleness for use in wafer-level-packaging (WLP) applications is disclosed. The glass comprises a composition in mol-% of SiO: 60-85, AlO: 1-17, BO: 8-20, NaO: 0-5, KO: 0-5, MgO: 0-10, CaO: 0-10, SrO: 0-10, and BaO: 0-10. An average number of non-bridging oxygen per polyhedron (NBO) is equal to or larger than &#x2212;0.2 and a ratio BO/AlOis equal to or larger than 0.5. The NBO is defined as NBO=2&#xd7;O/(Si+Al+B)&#x2212;4. A glass carrier wafer made from the low CTE boro-aluminosilicate glass and a use thereof as a glass carrier wafer for the processing of a silicon substrate are also disclosed, as well as a method for providing a low CTE boro-aluminosilicate glass.

Low CTE boro-aluminosilicate glass for glass carrier wafers

To promote the characteristic of an interface between a gate insulating film and a semiconductor and control the threshold voltage, in forming the insulating film, a surface on which the insulating film is to be formed is previously exposed to activated oxygen and thereafter, the insulating film is formed on the surface, or in steps of manufacturing a thin film transistor, the insulating film is formed with monosilane, dinitrogen monoxide and oxygen as raw materials.

Method for fabricating a thin film semiconductor device

Growing community of inventors

Kanagawa, Japan

Hiroshi Kuroki