Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Tokyo Electron Limited

Hiroshi Kudo

Sadahiro Kishii

Yoshiyuki Ohkura

Atsuhiro Tsukune

Junko Naganuma

Rika Shinohara

Kenichi Watanabe

Hirosato Ochimizu

Masanobu Ikeda

Ei Yano

Yoshihiro Nakata

Nobuyuki Ohtsuka

Tamotsu Owada

Kenji Nakagawa

Koichiro Inazawa

Masaki Haneda

Akira Oikawa

Kenji Ishikawa

Masao Kanazawa

Michiko Kobayashi

Masanori Naitou

Syun-ichi Fukuyama

A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.

Semiconductor device having insulating layers containing oxygen and a barrier layer containing manganese

A semiconductor device formed by the steps of: forming a dummy electrodeand a dummy electrode; forming a metal filmon the dummy electrode; conducting a thermal treatment at a first temperature to substitute the dummy electrodewith an electrodeof a material containing the constituent material of the metal film; forming a metal filmon the dummy electrode; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrodeand the metal filmdoes not take place, to substitute the second dummy electrode with an electrodeof a material containing the constituent material of the metal film

Semiconductor device and method for fabricating the same

A semiconductor device has a first insulating film formed over a semiconductor substrate, a first opening formed in the first insulating film, a first manganese oxide film formed along an inner wall of the first opening, a first copper wiring embedded in the first opening, and a second manganese oxide film formed on the first copper wiring including carbon.

Semiconductor device and method of manufacturing the same

A semiconductor device which includes a first wiring with a via connected to the first wiring, a second wiring connected to the via and a dummy via disposed adjacent to the via at a distance of 100 nm or less and formed on the same layer as the via.

Semiconductor device

The semiconductor device includes a silicon substrate, a device isolation insulating film dividing an active region of the silicon substrate into plural pieces, a gate electrode formed on the active region, a source/drain region which is formed in the active region on both sides of the gate electrode, and which constitutes a MOS transistor of an SRAM memory cell with the gate electrode, an interlayer insulating film formed over each of the active region and the device isolation insulating film, a first hole which is formed in the interlayer isolation insulating film, and which commonly overlaps with two adjacent active regions and the device isolation insulating film between the active regions, and a first conductive plug which is formed in the first hole, and which electrically connects the two active regions.

Semiconductor device and method for manufacturing the same

The method for fabricating a semiconductor device comprises the steps of: forming a dummy electrodeand a dummy electrode; forming a metal filmon the dummy electrode; conducting a thermal treatment at a first temperature to substitute the dummy electrodewith an electrodeof a material containing the constituent material of the metal film; forming a metal filmon the dummy electrode; and conducting a thermal treatment at a second temperature, which is lower than the first temperature and at which an interdiffusion of constituent materials between the electrodeand the metal filmdoes not take place, to substitute the second dummy electrode with an electrodeof a material containing the constituent material of the metal film

A method for fabricating a semiconductor device that prevents the occurrence of bowing and thickness reduction in a dual damascene method. As shown in FIG.(B), silicon nitride etching is performed on a semiconductor device in process of fabrication which has a section shown in FIG.(A). As a result, part of a copper film is oxidized and changes into oxide. Moreover, a CFdeposit is formed on it. By performing organic insulating film etching by the use of hydrogen plasma in FIG.(C), however, the oxide is deoxidized to copper and the CFdeposit is converted into a volatile compound and is removed.

Method for fabricating a semiconductor device

A semiconductor device includes a multilayer interconnection structure including an organic interlayer insulation film in which a conductor pattern is formed by a damascene process, wherein the organic interlayer insulation film carries thereon an organic spin-on-glass film.

Semiconductor device having a multilayer interconnection structure

The present invention relates to a method for forming an insulating film with a low relative dielectric constant. A method for forming an insulating film in terms of a plasma chemical vapor deposition, characterized in that a Si supply gas, an oxygen supply gas, and a fluorine supply gas are used a material gas to form said insulating film, and said insulating film is formed under a film forming condition that a density of said insulating film to be formed is equal to or more than 2.25 g/cm .

Semiconductor device and method for forming insulating film

The dual damascene method having steps of; after a first insulating film, a first organic insulating film, a second insulating film, and a metal film are formed in sequence, a first opening having a wiring pattern is formed in the metal film, then a second opening having a via pattern is formed in the second insulating film, then the first organic insulating film is etched using the second insulating film as a mask, then the first insulating film and the second insulating film are etched simultaneously while using the metal film and the first organic insulating film as a mask, and then the first organic insulating film is etched while using the metal film as a mask, at this stage, a wiring recess is formed in the first organic insulating film and the second insulating film, and a via-hole is formed in the first insulating film.

Semiconductor device manufacturing method

A ferroelectric film is formed on a principal surface of an underlying substrate. By the vapor deposition using high density plasma, an insulating protection film is deposited so that the ferroelectric film is covered therewith. The deposited protection film can prevent the ferroelectric film from deteriorating.

Method of making ferroelectric film with protective cover film against hydrogen and moisture

A method of forming a resist pattern including the steps of: forming a resist film by coating resist on the surface of a member to be processed, the resist containing a composition A capable of increasing the volume by chemical reaction; exposing and developing the coated resist film to form a pattern having an opening; and chemically reacting fluid containing a composition B with the composition A by contacting the fluid with the composition A to change the size of the opening of the resist film, the composition B being capable of increasing the volume of the composition A by chemical reaction with the composition A. It is possible to form a fine resist pattern by a simple method.

Growing community of inventors

Kawasaki, Japan

Hiroshi Kudo