Stanley Electric Co., Ltd

Hiroshi Kotani

Akio Ogawa

Michihiro Sano

Hiroyuki Kato

Tomofumi Yamamuro

Naochika Horio

Takaaki Sakai

Takahiko Nozaki

Shunya Ide

Mitsunori Harada

Ji-Hao Liang

Satoshi Ando

Kyotaro Koike

Masanori Sato

Kazuhiko Ueno

Kaori Tachibana

Soji Owada

Takayoshi Yamane

A light-emitting device according to the present invention comprises: a mounting board; a plurality of light-emitting elements that each include a supporting substrate and a semiconductor structure layer, the supporting substrate being disposed on the mounting board, and the semiconductor structure layer being formed on the supporting substrate and including a light-emitting layer, a wavelength conversion member that covers the plurality of light-emitting elements above the light-emitting elements and converts a wavelength of a light emitted from the light-emitting layer; a translucent member that covers a lower surface of the wavelength conversion member and covers the semiconductor structure layer on the supporting substrate; and a resin member filled between the plurality of light-emitting elements, the resin member being formed of a resin material containing particles having a light reflectivity. The translucent member includes a thin film portion having a constant film thickness between the wavelength conversion member and the resin member in a region between the plurality of light-emitting elements, and the constant film thickness is smaller than a distance between a top surface of the supporting substrate and a lower surface of the wavelength conversion member.

Light-emitting device

Provided is a light-emitting device having a plurality of light-emitting elements with high operation stability and light extraction efficiency. The light-emitting device includes: a light-emitting element; a translucent member which is disposed on the light-emitting element and has a columnar first portion having a bottom surface opposed to an upper surface of the light-emitting element, a second portion formed continuously with the first portion on the first portion and narrowed upward, and a columnar third portion formed continuously with the second portion on the second portion; and a reflective member configured to cover the side surfaces of the translucent member. In this light-emitting device, the height of the first portion of the translucent member in a direction perpendicular to the bottom surface thereof is &#x2159; or more the height of the translucent member in the direction perpendicular to the bottom surface.

A semiconductor light-emitting apparatus is constructed by a substrate; a semiconductor light-emitting element mounted on the substrate; a wavelength-converting structure, provided on the semiconductor light-emitting element, at least an outer edge portion of the wavelength-converting structure having an uneven top surface; and a white-light reflective layer provided on the substrate to surround sidewalls of the semiconductor light-emitting element and the wavelength-converting structure. The white-light reflective layer further includes an additional transparent resin layer excluding the reflective fillers on at least the outer edge portion of the wavelength-converting structure. The additional transparent resin layer is coupled to the transparent resin layer.

Semiconductor light-emitting apparatus having wavelength-converting structure with uneven top surface and its manufacturing method

A reliable semiconductor light-emitting device can include a mounting board, at least one semiconductor light-emitting chip mounted on the mounting board, a wavelength converting layer having a side surface covering the light-emitting chip, and a seal member having an opening contacting the side surface of the wavelength converting layer and covering chip electrodes. The light-emitting device can also include a transparent layer disposed into the opening of the sealing member so as to be located over the light-emitting chip and within a top surface of the light-emitting chip, and can be configured to emit various mixture lights having a high uniformity by using lights emitted from the light-emitting chip and the wavelength converting layer. Thus, the disclosed subject matter can provide the reliable light-emitting device, which can emit the mixture lights including a substantially white color light from a small light-emitting surface as a light source for a headlight, etc.

Semiconductor light-emitting device emitting light mixtures with substantially white tone

A semiconductor light-emitting device, a method for manufacturing the same and a vehicle headlight can include the light-emitting device, which is composed of a light-emitting structure including a transparent plate, at least one semiconductor light-emitting chip and a wavelength converting layer between the transparent plate and the light-emitting chip to emit various colored lights including white light. The light-emitting device can also include a mounting board mounting the light-emitting structure and a frame thereon, a reflective material disposed between the frame and the light-emitting structure and the transparent material located on the reflective material to prevent an occurrence of oil-bleeding phenomenon. Thus, the disclosed subject matter can provide the light-emitting device having a high reliability for the vehicle headlight and the like, which can be maintained at a high quality even when they have been used for a long time under harsh conditions, and methods of manufacturing such devices.

Semiconductor light-emitting device, manufacturing method for the same and vehicle headlight

A light-emitting device having an LED element and a resin layer including a convex portion covering the LED element can suppress color unevenness to achieve light emission with uniform color distribution. The light-emitting device can include a substrate, an LED element mounted on the substrate, a resin layer which contains a wavelength conversion material and is formed on the substrate to cover the LED element, the resin layer including a convex portion directly covering the LED element and a flat thin film portion extending around the convex portion, and a reflective portion which is formed over the thin film portion around the convex portion. A diffusion portion can be formed to cover the convex portion of the resin layer.

Light-emitting device, method for producing the same, and illuminating device

In the production of a light emitting device, in which a plurality of light emitting element parts carrying LED elements are formed on a substrate, and the substrate is diced, generation of shaving dusts is suppressed at the time of the dicing, and breakage of the substrate during the production process can be prevented. In the process of forming a slit crossing a region for forming a light emitting element part in a metal substrate, a recess which serves as a resin reservoir can be formed so as to cross the slit. The slit can be filled with an insulating material, the recess can be filled with a resin, and they both can be cured. A light emitting element part can be formed in the region for forming the light emitting element part, the metal substrate can be cut into units comprising one or a plurality of the light emitting element parts, and can be mounted on a printed circuit board on which a pattern is formed.

Light emitting device and method for manufacturing the same

A light emitting device that can radiate heat generated by a semiconductor light emitting element and/or a resin layer at not only a position directly under the light emitting element, but also a position remote from such a position with respect to the main plane direction is provided. In the light emitting device, a light emitting element is carried on a substrate, and a resin covers the light emitting element. An anisotropic heat conduction material showing a heat conductivity for the substrate main plane direction larger than that for the substrate thickness direction is carried on the substrate. A side of the anisotropic heat conduction material contacts with the resin. Thereby, the anisotropic heat conduction material can receive heat of the resin, conduct it along the main plane direction, and radiate it to the substrate at a position remote from the light emitting element and/or the resin. As the anisotropic heat conduction material, for example, one or more laminated layers of graphite in the form of sheet are used.

Semiconductor light emitting device

A light-emitting device that suppresses color unevenness can be provided. A transparent member can be disposed on a fluorescence-containing resin layer. Part of excitation light can be emitted upward from an edge surface of the fluorescence-containing resin layer directly and without passing through the transparent member. Thus, fluorescent light emitted in large quantities from a place near an edge surface of the transparent member can be mixed with the excitation light emitted from the edge surface of the fluorescence-containing resin layer directly without passing through the transparent member, thereby suppressing color unevenness at a location near the edge surface of the transparent member.

Light emitting device that suppresses color unevenness

A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device

An LED light source can include protection members to protect bonding wires. The LED can include a substrate including electrode patterns, a sub mount substrate located on the substrate, at least one flip LED chip mounted on the sub mount substrate and a phosphor rein covering the LED chip. The bonding wires can connect each of the electrode patterns to conductor patterns connecting to electrodes of the LED chip. The protection members can be located so as to surround both sides of the bonding wires. In addition, because each height of the protection members is higher than each maximum height of the bonding wires and is lower than a height of the phosphor resin, the protection members can protect the bonding wires from external pressure while the light flux is not reduced. Thus, the disclosed subject matter can provide a reliable LED light source having a favorable light distribution.

Light emitting diode (LED) light source and manufacturing method for the same

A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn&#x2014;Si&#x2014;O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.

ZnO based semiconductor device and its manufacture method

A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.

ZnO-containing semiconductor layer, its manufacture method, and semiconductor light emitting device

A manufacture method for zinc oxide (ZnO) based semiconductor crystal includes providing a substrate having a Zn polarity plane; and reacting at least zinc (Zn) and oxygen (O) on the Zn polarity plane of said substrate to grow ZnO based semiconductor crystal on the Zn polarity plane of said substrate in a Zn rich condition. (a) An n-type ZnO buffer layer is formed on a Zn polarity plane of a substrate. (b) An n-type ZnO layer is formed on the surface of the n-type ZnO buffer layer. (c) An n-type ZnMgO layer is formed on the surface of the n-type ZnO layer. (d) A ZnO/ZnMgO quantum well layer is formed on the surface of the n-type ZnMgO layer, by alternately laminating a ZnO layer and a ZnMgO layer.@(e) A p-type ZnMgO layer is formed on the surface of the ZnO/ZnMgO quantum well layer. (f) A p-type ZnO layer is formed on the surface of the p-type ZnMgO layer.@(g) An electrode is formed on the n-type ZnO layer and p-type ZnO layer. The n-type ZnO layer is formed under a Zn rich condition at the step (b).

Manufacture method for ZnO based semiconductor crystal and light emitting device using same

A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

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Tokyo, Japan

Hiroshi Kotani