Tokyo Electron Limited

Other

Fujikin Inc.

V-Tex Corporation

Hiroshi Koizumi

Jun Hirose

Hideki Nagaoka

Nobukazu Ikeda

Kouji Nishino

Ryousuke Dohi

Eiji Ideta

Satoshi Kagatsume

Tadahiro Ohmi

Takashi Hirose

Tomio Uno

Michio Yamaji

Atsushi Matsumoto

Akihiro Morimoto

Yukio Minami

Kazuhiko Sugiyama

Keisuke Kondoh

Toyomi Uenoyama

Katsunori Yonehana

Kazuo Fukazawa

Daisuke Hayashi

Norihiko Amikura

Takehiro Shindo

Shigeru Ishizawa

Hiroki Endo

Jun Ooyabu

Kazuo Fukasawa

Keiki Ito

Tsuyoshi Shimazu

Takari Yamamoto

Kazuyuki Tezuka

Noriiki Masuda

Kenichiro Nakamura

Hiroshi Ohno

Tsuyoshi Moriya

Hiroyuki Nakayama

Kazuhiro Yoshikawa

Tsutomu Hiroki

Jun Ozawa

Hiroki Oka

Takashi Kitazawa

Tatsuya Ogi

Eiji Hirose

Yoji Iizuka

Norikazu Sasaki

Wataru Machiyama

Seiichi Iida

Tatsuya Nakagome

Kenichi Nakagawa

Fumio Mutoh

Toshifumi Ando

Jun Yamasaki

A temperature control method of controlling a temperature of a semiconductor wafer mounted on a mounting table includes a supply process of supplying, in a state that a supply of a power to a heater configured to heat the mounting table is stopped or the power is maintained to be constant, a heat transfer gas into a gap between the semiconductor wafer and the mounting table; a measurement process of measuring a temperature variation of the mounting table due to heat exchange between the semiconductor wafer and the mounting table through the heat transfer gas; a calculation process of calculating a correction value based on the temperature variation of the mounting table; and a control process of starting the supply of the power and controlling the power such that the temperature of the mounting table reaches a target temperature corrected with the correction value.

Substrate processing apparatus and substrate processing method

A transfer device can have a high durability and no limit in an operation of an arm member. An electrostatic pickof a first transfer deviceis advanced into a process module, and a wafer W is electrostatically attracted to and held on the electrostatic pick. While the wafer W is being transferred into a load lock moduleby driving the first transfer device, the electrostatic pickis turned into an electrically floating state, so that a state in which the wafer W is electrostatically attracted to and held on the electrostatic pickis maintained. After the transferring of the wafer W to the load lock moduleis completed, charges of the electrostatic pickare neutralized, so that the wafer W is not electrostatically attracted to and held on the electrostatic pick

Transfer device

Temperature control method

Transfer device and control method thereof

In a vacuum transfer chamber, a position detecting mechanism for detecting the positions of semiconductor wafers is arranged. The semiconductor wafers disposed at predetermined positions in a load lock chamber and vacuum processing chambers are transferred to the position detecting mechanism by a vacuum transfer mechanism and the positions of the wafers are detected. Then, based on the detection results, aligning between the load lock chamber and the vacuum processing chambers is performed.

Delivery position aligning method for use in vacuum processing apparatus, vacuum processing apparatus and computer storage medium

A method for replacing plural substrates to be processed by a substrate processing apparatus which includes a substrate processing chamber, a load lock chamber, and a conveying apparatus including first and second conveying members for conveying the plural substrates into and out from the substrate processing chamber and the load lock chamber. The method includes the steps of a) conveying a first substrate out from the substrate processing chamber with the first conveying member, b) conveying a second substrate into the substrate processing chamber with the second conveying member, c) conveying the second substrate out from the load lock chamber with the second conveying member, and d) conveying the first substrate into the load lock chamber with the first conveying member. The steps c) and d) are performed between step a) and step b).

Substrate replacing method and substrate processing apparatus

A partial pressure control systemincludes two valveswhich are branched from an operation gas supply pipeand which variably control operation gas, pressure sensorswhich are respectively connected to the each valvesin series and which detect pressure of the operation gas, and a controllerwhich proportionally controls the operation of the valvesbased on detection result of the pressure sensors, thereby relatively controlling pressures Pand Pof the two valves. With this configuration, it is possible to reduce wastefull consumption of the operation gas, and to enhance the responsivity with respect to change of setting and the like.

Flow rate control system and shower plate used for partial pressure control system

In a vacuum transfer chamber, a position detecting mechanismfor detecting the positions of semiconductor wafers W is arranged. The semiconductor wafers W disposed at predetermined positions in a load lock chamberand vacuum processing chamberstoare transferred to the position detecting mechanismby a vacuum transfer mechanismand the positions of the wafers are detected. Then, based on the detection results, aligning between the load lock chamberand the vacuum processing chamberstois performed.

Transfer/alignment method in vacuum processing apparatus, vacuum processing apparatus and computer storage medium

Partial pressure control system, flow rate control system and shower plate used for partial pressure control system

Shock waves occurring when opening a gate valve between two vacuum chambers and peeling of particles by a viscous force taking place when a gas is supplied into a vacuum chamber are necessary to be suppressed by the apparatus and method of the invention, whereby contamination of a substrate by particles is suppressed. If one vacuum chamber is a substrate processing chamber for performing a vacuum process on the substrate and the other chamber is a transfer chamber having a substrate transfer device therein, the gate valve is opened when inner pressures of both the vacuum chambers are less than 66.5 Pa and higher one thereof is less than twice a lower one thereof. Preferably, a purge gas for peeling of particles is supplied, before supplying the purge gas for pressure control, into the substrate processing chamber with a flow rate greater than that of the purge gas for pressure control.

Substrate processing apparatus and substrate transferring method

A processing system includes a transfer chamber, a plurality of chambers connected to the transfer chamber, a transfer apparatus disposed in the transfer chamber, and a control section configured to control the transfer apparatus. The transfer apparatus includes a base and transfer arm configured to perform a slide motion and a swing motion, respectively. The control section includes a storage portion and an operational controller. The storage portion stores pattern model data concerning a plurality of motion patterns each indicative of a composite motion of the slide motion and the swing motion, and track model data concerning time-based motion tracks respectively corresponding to the motion patterns. The operational controller is configured to retrieve necessary data from the pattern model data and the track model data and control the transfer apparatus in accordance therewith.

Transfer apparatus for target object

A semiconductor processing system includes a control section that refers to recipe information on a process sequence, thereby detects that a processing apparatus will shift from an ordinary operation state to a long idle state, and switches thermo-medium circulation apparatus from an ordinary mode to an energy-saving mode after the shift to the long idle state. The control section refers to recipe information on the process sequence or another process sequence, thereby detects that the processing apparatus will shift from the long idle state to the ordinary operation state, and switches the thermo-medium circulation apparatus from the energy-saving mode to the ordinary mode before the shift to the ordinary operation state. A thermo-medium is circulated at a first flow rate and at a second flow rate smaller than the first flow rate in the ordinary mode and the energy-saving mode, respectively.

Method and system for controlling chiller and semiconductor processing system

A fluid supply apparatus with a plurality of flow lines branching out from one pressure regulator with the flow lines arranged in parallel and constructed so that opening or closing one flow passage will have no transient effect on the steady flow of the other flow passages. Each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time &#x394;t from the starting point. The invention includes a method and an apparatus in which a plurality of gas types can be controlled in flow rate with high precision by one pressure-type flow control system.

Parallel divided flow-type fluid supply apparatus, and fluid-switchable pressure-type flow control method and fluid-switchable pressure-type flow control system for the same fluid supply apparatus

A fluid supply apparatus with a plurality of flow lines branching out from one pressure regulator with the flow lines arranged in parallel and constructed so that opening or closing one flow passage will have no transient effect on the steady flow of the other flow passages. Each flow passage is provided with a time delay-type mass flow controller MFC so that when one closed fluid passage is opened, the mass flow controller on that flow passage reaches a set flow rate Qs in a specific delay time At from the starting point. The invention includes a method and an apparatus in which a plurality of gas types can be controlled in flow rate with high precision by one pressure-type flow control system.

Exhaust ring for manufacturing semiconductors

Growing community of inventors

Nirasaki, Japan

Hiroshi Koizumi