Toshiba Silicone Co., Ltd.

Tokyo Rope Mfg. Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Hitachi, Ltd.

Fuji Electric Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Renesas Electronics Corporation

Matsushita Electric Works, Ltd.

Lion Corporation

Fuji Electric Holdings Co., Ltd.

Tokyo Rope Manufacturing Co., Ltd.

Oki Electric Industry Co., Ltd.

Asahi Glass Company, Limited

The University of Tokyo

Kyushu University

Hiroshi Kimura

Tetsuya Watanabe

Masaru Tanaka

Yuko Sato

Shunji Hachisuka

Daisuke Manabe

Yoshihiro Tamura

Fumihiro Matsuda

Junjiro Kai

Kenji Saito

Kohsuke Ashiduka

Tetsuya Nitta

Takahisa Eimori

Naofumi Tada

Kazuo Mukae

Minoru Inoue

Toshiyuki Matsui

Yoshitaka Otsu

Katsumi Morii

Shinichiro Yanagi

Kazuma Onishi

Kazuo Seto

Motoaki Haruna

Takeshi Suzuki

Yoshiyuki Sato

Satoshi Matsunaga

Hiroshi Shimomura

Hiroshi Iwasaki

Kentaro Hayashi

Teruo Fujii

Takashi Ide

Hideaki Tsuchiya

Yutaka Horie

Hisanao Ogata

Takashi Ishii

Yorinobu Kunimune

Akihiko Ohi

Bunjirou Murai

Yasutoshi Nagano

Yasuhiro Kushida

Ikurou Mori

Hiroyuki Shimmura

Koichi Tsuda

Toshiyuki Ishikawa

Nobuhiro Hara

Shinichi Tamura

Kohsuke Ashizuka

Yoshiji Hotta

Tadashi Mimura

Kunishige Kuroda

Takashi Inoue

Masaaki Otsuki

Shinji Kida

Hiroshi Konta

Masanori Toya

Atsunori Morigaki

Hitoshi Kurumizaka

Tohru Hanada

Morio Yamamoto

Yoji Yamada

Tsutomu Mochizuki

Jun Yubamoto

Tetsuro Abe

Yoko Hayashi

Tuneharu Mukaiyama

Heiji Sumida

Akira Takagi

Yoshiyuki Satoh

Yukio Kitada

Masayasu Koitabashi

Ryo Yamashita

Akihito Harada

Yoshihiro Uesugi

Yasuyuki Ohkawa

Tetsuya Handa

Nobuhiro Kai

Yasuo Yoshimoto

Kentaro Kamimae

Yuki Tanabe

Taku Oguni

Makoto Hirama

Hideto Tozawa

Kuninobu Ikeda

Ryu Yamaguchi

Tsuyoshi Enomoto

Jyoji Hayashi

Tadashi Asakawa

Kenji Saitoh

Hideaki Muto

A semiconductor device which eliminates the need for high fillability through a simple process and a method for manufacturing the same. A high breakdown voltage lateral MOS transistor including a source region and a drain region is completed on a surface of a semiconductor substrate. A trench which surrounds the transistor when seen in a plan view is made in the surface of the semiconductor substrate. An insulating film is formed over the transistor and in the trench so as to cover the transistor and form an air-gap space in the trench. Contact holes which reach the source region and drain region of the transistor respectively are made in an interlayer insulating film.

Semiconductor device and method for manufacturing the same

Cable clamp shaped with a wave form

An end fixing structure of a composite wire rod includes a composite wire rod, a wedge body that is formed into a cylindrical shape with an enlarging diameter from a front end portion, wherein an inner wall surface is formed for engaging with the outer surface of the composite wire rod which is copied onto the inner wall surface, and a sleeve provided on an outer peripheral side of the wedge body and having a conical and hollow inner structure, and the wedge body consists of a plurality of divided wedge bodies, facing each other on their divided surfaces with a space therebetween, and the inner wall surface in the divided wedge body is made of microscopic irregularities, thereby shortening a processing time and maintaining a sufficient gripping power over long term.

End fixing structure of composite wire rod

Tool for fixing a tension member of composite strand for prestressed concrete reinforcement and post tensioning concrete structure

This liquid detergent contains an &#x3b1;-sulfofatty acid ester salt (component (a)), an alkylbenzene sulfonate (component (b)), a polyoxyethylene alkyl ether sulfate (component (c)), and an alkanolamine (component (d)). The amount of the component (a) is 5% by mass or greater; the total amount of the component (b) and the component (c) is 5% by mass or greater; the total amount of the component (a), the component (b), and the component (c) is 10% by mass to 50% by mass, the mass ratio represented by (d)/(a) is 1/5 or greater, and the mass ratio represented by (a)/((b)+(c)) is 1 or less.

Liquid detergent

An end fixing structure of a composite wire rod includes a composite wire rod, a wedge body formed in a cylindrical shape, whose outside diameter expands from a tip portion subject to a tensile force toward a back end portion on a fixed side, to whose inner wall surface an outer surface of the composite wire rod is transferred, and in which the inner wall surface engaging with the outer surface of the composite wire rod is formed, and a sleeve provided on an outer circumferential side of the wedge body and having an internal structure of a conical hollow whose diameter expands toward the back end portion on the fixed side, wherein the wedge body is formed from a plurality of divided wedge bodies and the inner wall surface is formed from a fine irregularity.

Gasket for carbon fiber composite cable

Provided is: a cell culture membrane, which is free from materials derived from living organisms, can easily be industrially mass-produced, exhibits superior long-term storage properties and chemical resistance, has excellent cell adhesion properties and long-term culture properties and is capable of replicating a cell adhesion morphology that is similar to that of collagen derived from living organisms and being used for conventional cell cultivation. Also provided are a cell culture substrate, and a method for manufacturing the cell culture substrate. In the present invention, as a cell adhesion layer, a polymer membrane represented by formula (I) is formed on the base of a cell culture substrate so as to have a membrane thickness equal to or greater than 0.2 &#x3bc;m (in the formula, R1 and R2 represent a &#x2014;(CH)&#x2014;NHmoiety (n is an integer of 1-10 inclusive.) or H, with at least one of R1 and R2 being a &#x2014;(CH)&#x2014;NHmoiety. Moreover, l and m are positive integers expressing polymerization degree). 

Cell culture membrane, cell culture substrate, and method for manufacturing cell culture substrate

Growing community of inventors

Tokyo, Japan

Hiroshi Kimura