Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Hiroshi Kawata

Yoshitaka Otsubo

Hiroyuki Masumoto

Ryo Hattori

Manabu Matsumoto

Hidetoshi Ishibashi

Tetsuo Kunii

Minoru Egusa

A power semiconductor device includes: an outer case; at least one press-fit terminal buried in a top surface of the outer case; and a plurality of supporting portions formed so as to protrude from the top surface of the outer case. A top end of the press-fit terminal protrudes more than top surfaces of the supporting portions from the top surface of the outer case.

Power semiconductor device

A semiconductor device includes: a substrate having an insulating resin and a metal pattern provided on the insulating resin; a mounted component mounted on the metal pattern; and an epoxy resin encapsulating the metal pattern and the mounted component, wherein a slit is provided in the metal pattern around the mounted component, and the insulating resin exposed from the metal pattern and the epoxy resin are brought into intimate contact with each other in the slit.

Semiconductor device

A semiconductor device includes a semiconductor substrate having a principal plane on which gate, source, and drain electrodes are located. A film made of a polymer with a low dielectric constant is over the gate and drain electrodes to insulate the gate and drain electrodes from the source electrodes. A chip surface electrode located over the low-dielectric-constant polymer film and the source electrode, and connected to ground potential. The source electrode is provided with the ground potential through the chip surface electrode.

Semiconductor device with polymer insulation of some electrodes

Growing community of inventors

Hyogo, Japan

Hiroshi Kawata