Sony Corporation

Mitsubishi Denki Kabushiki Kaisha

The Furukawa Electric Co., Ltd.

Mitsubishi Electric Corporation

Mitsubishi Heavy Industries Limited

Sumida Corporation

Renesas Technology Corp.

Kabushiki Kaisha Kobe Seiko Sho

Renesas Electronics Corporation

Hirose Electric Company, Ltd.

Nippon Hoso' Kyokai

Fujitsu Optical Components Limited

Nihon Tokushu Toryo Co., Ltd.

Hiroshi Kawashima

Kazutaka Nara

Kayoko Tanaka

Hideki Noma

Ryoki Honjo

Tomoyuki Ono

Yoshihito Ishibashi

Kazumi Sato

Daisuke Yamazaki

Shigeru Tajima

Ken Sakamoto

Taketoshi Shikano

Keiichi Higashitani

Junji Fujino

Kiyoshi Omori

Masakazu Okada

Hitoshi Taniguchi

Kazuya Sunami

Masazumi Shiozawa

Hidehiko Yamamoto

Masanori Takahashi

Satoshi Kondo

Keiichi Yamada

Motoshige Igarashi

Masahiko Ikeno

Yasuyoshi Uchida

Takamasa Iwai

Yuuki Taniguchi

Hidekazu Yamamoto

Shiro Nakamura

Masao Yamawaki

Kei Yamashita

Noritaka Matsubara

Hideo Saeki

Junko Saito

Takeshi Kitani

Soichi Sakamoto

Taketoshi Maeda

Masaya Kimura

Takashi Inoue

Shigeto Maegawa

Itaru Kawakami

Takahiro Hirano

Kohei Shibata

Akio Sugimoto

Koji Yamamoto

Naofumi Murata

Yoshitaka Yamada

Kouji Miyata

Jun Muto

Kazuhisa Taketoshi

Takayuki Yamaguchi

Hiroyuki Koshi

Eiichiro Yoshikawa

Toshimitsu Tanaka

Kenji Iwai

Yukiyoshi Hirose

Kazunori Watanabe

Mika Nishida

Isao Ohyama

Jin Pan

Toshihiko Sasaki

Osamu Kaneda

Yasuo Nanri

Fumihiko Andoh

Manabu Shibata

Yasutaka Nishioka

Shoji Suzuki

Katsu Tanaka

Mika Anzai

Arata Iwasaki

Naofumi Itano

Hiromichi Okumura

Toshiaki Yasumoto

Masanobu Hishiki

Yaichiro Miura

Katsuhiro Mitsuda

Yoshihiro Takai

Claudio Feliciani

The present invention provides a semiconductor device including an insulating layer, a conductive layer bonded to one main surface of the insulating layer, a semiconductor element arranged such that the upper surface of the semiconductor element faces a direction same as the one main surface of the insulating layer, an upper electrode provided on the upper surface of the semiconductor element, a wiring member that has one end electrically bonded to the upper electrode of the semiconductor element and has another end electrically bonded to the conductive layer, and has a hollow portion, a first sealing material, and a second sealing material, in which the first sealing material seals at least part of the semiconductor element so as to be in contact with the semiconductor element, and the second sealing material seals the wiring member so as to be in contact with the wiring member.

Packaging of a semiconductor device with dual sealing materials

A lead member includes a plurality of lead terminals, and the lead terminals extend from the inside to the outside of a mold resin. Each of the lead terminals has a base portion and a tip end portion on the outside of the mold resin. The base portion is disposed on a region side having a semiconductor element and extends in a direction protruding from the mold resin. The tip end portion extends in a direction different from the base portion and is disposed on the opposite side to a region having the semiconductor element as viewed from the base portion. The length by which the base portion extends differs between a pair of lead terminals adjacent to each other, among the lead terminals. At least a surface of the base portion of each of the lead terminals is covered with a coating resin.

Power semiconductor device and method of manufacturing the same, and power conversion device

A coil componentincludes a first coil elementand a second coil elementeach formed in an angular-tubular shape and disposed in parallel by winding and laminating a single flat wirein one direction with edgewise-winding between one end portionA and another end portionB and bending the wound and laminated coil into two, and includes an interconnection partfor connecting the both elements. The interconnection partincludes a coil element winding end portion side raised partA, a coil element winding start portion side raised partB, and an intermediate partC extended between the two raised partsA andB.

Coil component and coil device

In one example embodiment, a power storage management system includes a user terminal, a power storage apparatus and an information processing apparatus. In one example embodiment, the information processing apparatus is configured to, using a mobile communication network (e.g., Global System for Mobile Communications or the Universal Mobile Telecommunications System), communicate with the power storage apparatus.

Power storage management system, information processing apparatus, power storage apparatus, method of operating power storage management system, and method of operating information processing apparatus

Information processing apparatus, information processing method, and power storage apparatus management system

A first lead terminal, a second lead terminal provided parallel to the first lead terminal, and a tie bar connecting the first lead terminal and the second lead terminal are provided. The tie bar includes a first narrow-width section touching the first lead terminal, a second narrow-width section touching the second lead terminal, and a wide-width section having a larger width than the first narrow-width section and the second narrow-width section and connecting the first narrow-width section and the second narrow-width section. The wide-width section has a through-hole formed between the first narrow-width section and the second narrow-width section.

Method for manufacturing semiconductor device

Provided is a coil componentincluding a first coil elementand a second coil elementeach formed in an angular-tubular shape and disposed in parallel, and an interconnection partfor connecting the both coil elements. The interconnection partis configured with a first connecting partA, a second connecting partB, an intermediate partC, and an inverted partD. The first connecting partA is configured with a flatwise-bending portionAand an edgewise-winding portionA. The second connecting partB is configured with a flatwise-bending portionBand an edgewise-winding portionB. The intermediate partC is provided to extend over a gap partbetween the second coil elementand the first coil elementon a front end-face side without being twisted.

An optical waveguide element includes: a cladding portion made of silica-based glass; and a plurality of optical waveguides positioned in the cladding portion and made of silica-based glass in which ZrOcrystal particles are dispersed. The optical waveguide element is a planar lightwave circuit. The plurality of optical waveguides configure an arrayed waveguide grating element.

Optical waveguide element

A lead frame () includes an inner lead (), an outer lead () connected to the inner lead (), and a power die pad (). A power semiconductor device () is bonded onto the power die pad (). A first metal thin line () electrically connects the inner lead () and the power semiconductor device (). Sealing resin () seals the inner lead (), the power die pad (), the power semiconductor device (), and the first metal thin line (). The sealing resin () includes an insulating section () directly beneath the power die pad (). A thickness of the insulating section () is 1 to 4 times a maximum particle diameter of inorganic particles in the sealing resin (). A first hollow () is provided on an upper surface of the sealing resin () directly above the power die pad () in a region without the first metal thin line () and the power semiconductor device ().

Power semiconductor apparatus and manufacturing method therefor

Lead frame and method for manufacturing semiconductor device

A leadframe of a semiconductor device includes a die pad, first and second suspension leads, and a frame. The main surfaces of the die pad and the frame are located on different planes, and the die pad and the frame are connected to each other by the first and second suspension leads. A first boundary line between the first suspension lead and the die pad runs on a straight line different from a second boundary line between the second suspension lead and the die pad. A third boundary line between the first suspension lead and the frame runs on a straight line different from a fourth boundary line between the second suspension lead and the frame.

Semiconductor device

Growing community of inventors

Tokyo, Japan

Hiroshi Kawashima