Sony Corporation

Hitachi Global Storage Technologies Netherlands B.v.

Hiroshi Kawanobe

Koji Takahashi

Masashi Nakata

Shinya Sato

Minoru Hashimoto

Toru Aida

Kenji Ikeda

Fuminori Sai

Takeshi Ishimoto

Daisuke Yoshioka

Toshiroh Unoki

Yuuji Inoue

Hideaki Kato

Osamu Oka

Naoyuki Minami

Emi Nishioka

Katsushi Uchiyama

Yasuhiro Chouji

Hidenobu Hanami

Yoshiro Hattori

Naoki Tajima

There is provided a solid-state imaging device including: a pixel region that includes a plurality of pixels arranged in a two-dimensional matrix pattern. Some of the plurality of pixels are configured to be phase difference detection pixels that include a photoelectric conversion section disposed on a semiconductor substrate and a light blocking film disposed above a portion of the photoelectric conversion section. In particular a location of the light blocking film for the phase difference detection pixels varies according to a location of the phase difference detection pixel. For example, the location of the light blocking film for a phase difference detection pixel positioned at a periphery of the pixel region is different than a location of the light blocking film for a phase difference detection pixel positioned in a center portion of the pixel region.

Solid-state imaging device, electronic apparatus, lens control method, and imaging module

Embodiments in accordance with the present invention help a disk drive to effectively cope with a data address mark detection error. In one embodiment, a data sector is provided with plural data address marks and an read/write (RW) channel reads out the data sector using part of those data address marks. Each divisional section of a split sector has two data address marks and the RW channel uses one of the two data address marks. A data address mark to be used is specified by a register. When an error occurs in detecting a data address mark, its position is stored in a register. Based on the error position, an error recovery processing section stores, in the register, a data address mark to be used in a next retry.

Data storage device and error processing method in its read processing

A nonvolatile semiconductor storage device and method of managing the same are provided. The nonvolatile semiconductor storage device includes a nonvolatile memory configured to be electrically rewritable; and a controller configured to control an access area of the nonvolatile memory on the basis of information associated with management of the nonvolatile memory. The controller partitions an area of the nonvolatile memory for management and numbers management information for managing data for each area and a map of the management information in an integrated manner to write the numbered management information and map to the nonvolatile memory, thereby determining whether the management information and the map are normal on the basis of the numbering.

Nonvolatile semiconductor storage device and method of managing the same

Embodiments of the invention prevent erroneous writing/readout onto/from magnetic disks or other recording disks, even when data transfer between a controller such as an HDC, and a channel such as an R/W channel, and the read/write operation performed by the channel do not match each other in timing. In one embodiment, an HDC/MPU outputs to an R/W channel a starting instruction for data transfer to/from a head, and data that indicates data length of data to be transferred. In response to the data transfer starting instruction from the HDC/MPU, the R/W channel starts transferring, to/from the head, recorded data of the data length notified from the HDC/MPU.

Data storage device, data storage control circuit, and control method for magnetic disk drive

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Kanagawa, Japan

Hiroshi Kawanobe