Sumitomo Electric Device Innovations, Inc.

Hiroshi Kawakubo

Toshiyuki Kosaka

A semiconductor device includes: a substrate comprised by gallium arsenide; an active layer provided on the substrate; a first nickel-plated layer provided on a lower face of the substrate facing the active layer; a copper-plated layer provided on a lower face of the first nickel-plated layer; and a second nickel-plated layer provided on a lower face of the copper-plated layer.

Semiconductor device

A method for manufacturing a semiconductor device that includes steps of: (1) adhering a support substrate to a first surface of a wafer using an adhesive, the wafer including first and second scribe lines extending along first and second directions, respectively, (2) thinning the wafer, (3) forming a groove in a first scribe line excluding a region located in an outer peripheral portion of the wafer, the groove piercing the wafer from the first surface to a second surface opposite to the first surface to expose the adhesive, the first scribe line and the second scribe line demarcating chip regions; and (4) removing the adhesive by immersing the wafer adhered to the support substrate in a solvent such that the solvent permeates into the groove.

Method for manufacturing semiconductor device

A method for fabricating a semiconductor device having a GaN-based semiconductor layer on a first surface of a substrate made of SiC, a pad being provided on the GaN-based layer, includes: forming a first via hole in the substrate by etching, with fluorine based gas, from a second surface of the substrate opposite to the first surface, the etching being carried out with the GaN-based layer being used as an etch stopper; and forming a second via hole in the GaN-based semiconductor layer, with chlorine based gas, from a bottom surface of the first via hole, the etching being carried out with the pad being used as an etching stopper, the chlorine based gas being an etchant different from the fluorine based gas.

Growing community of inventors

Yokohama, Japan

Hiroshi Kawakubo