Sumitomo Heavy Industries Ion Technology Co., Ltd.

Sen Corporation, an Shi and Axcelis Company

Hiroshi Kawaguchi

Mitsuaki Kabasawa

Mitsukuni Tsukihara

Junichi Murakami

Takanori Yagita

Michiro Sugitani

Makoto Sano

Hiroshi Sogabe

Yuuji Ishida

Takashi Kuroda

Takashi Nishi

Kazunari Ueda

In an insulating structure which insulates an electrode provided inside a vacuum region of an ion implanter from another member and supports the electrode, a first insulating member supports the electrode. A second insulating member is fitted to the first insulating member to suppress deposition of contamination particles to the first insulating member. The second insulating member is formed of a material having a hardness lower than that of the first insulating member. A Vickers hardness of an outer surface of the second insulating member is 5 GPa or less. Bending strength of the second insulating member is 100 MPa or less. The second insulating member is formed of a material including at least one of boron nitride, a porous ceramic, and a resin.

Insulating structure

An ion generator includes an arc chamber which has a plasma generating region therein, a cathode configured to emit a thermoelectron toward the plasma generating region, a repeller which faces the cathode in an axial direction in a state where the plasma generating region is interposed between the cathode and the repeller, and a cage which is disposed to partially surround the plasma generating region at a position between an inner surface of the arc chamber and the plasma generating region.

Ion generator

An ion generator includes an ion source control unit that controls a gas supply unit and a plasma excitation source in accordance with a current ion source condition and a new ion source condition to be employed subsequent to the current ion source condition, a retention time obtaining unit that obtains retention time for the current ion source condition, and a pre-treatment condition setting unit that sets a pre-treatment condition defining a pre-treatment for forming a surface layer region suitable for the new ion source condition on a plasma chamber inner wall based on the current ion source condition, the retention time, and the new ion source condition. The ion source control unit is configured to control the gas supply unit and the plasma excitation source in accordance with the pre-treatment condition when the current ion source condition is changed to the new ion source condition.

Ion generator and method of controlling ion generator

A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.

Wafer charge compensation device and ion implantation system having the same

A beam space-charge compensation device is applied to an angular energy filter provided in an ion beam processing system that performs processing by irradiating onto a wafer with an ion beam. The beam space-charge compensation device comprises a plasma shower provided in a beam-guiding chamber of the angular energy filter. The plasma shower comprises an arc chamber having a filament for generating thermo-electrons for plasma. The arc chamber comprises an extraction hole for extracting the thermo-electrons. The plasma shower is arranged such that the extraction hole is located on lines of magnetic force, perpendicular to an ion beam advancing direction, of the magnetic field and that a center axis of the filament and a center axis of said extraction hole coincide with the lines of magnetic force, perpendicular to the ion beam advancing direction, of the magnetic field.

Growing community of inventors

Ehime, Japan

Hiroshi Kawaguchi