Tokuyama Corporation

Other

Kabushiki Kaisha Toshiba

Hiroshi Kato

Kazuhiko Hayashi

Hiroyuki Kohno

Naoto Miyashita

Hiroaki Taira

Tadaharu Komatsubara

Kenji Doi

Kenichi Ishizu

Takayuki Maehara

Yuya Yamano

Hiroyuki Kono

Makoto Sato

Masahiro Abe

Yoshikuni Tateyama

Yoshihiro Minami

Jun Takayasu

Katsumi Yamamoto

Masamichi Wada

Naoto Mochizuki

Satoshi Goda

Hideo Kasuya

Makoto Kameda

Michimasa Tamura

The present invention relates to a method for producing inorganic oxide particles, comprising at least the following steps of: The inorganic oxide particles obtained by the method of the present invention have high purity and are excellent in flowability.

Method for producing inorganic oxide particles

Silica composite oxide particles comprising silica and a metal oxide other than silica, the content of the metal oxide other than silica being from 30 to 50 mol %, and a coefficient of variation in the particle diameter being not larger than 30%. The silica composite oxide particles contain metal oxides other than silica in an amount of not smaller than 30 mol %, which could not be produced thus far, and feature excellent spherical shape and excellent monodispersion property.

Silica composite oxide particles and method of producing the same

A semiconductor wafer or a film formed thereon is polished by using a polishing agent comprising abrasive containing silica particles as the main component, water as a solvent, and a water-soluble cellulose, an alkali metal impurity content of the polishing agent being 5C ppm or less where the polishing agent contains C % by weight of the water-soluble cellulose, so as to flatten the semiconductor wafer without doing damage to the wafer or the film formed thereon and without bringing about a dishing problem in the polished surface.

Abrasive and method for polishing semiconductor substrate

A polishing slurry having a high polishing rate is provided. A polishing slurry comprising water, fumed silica having an average primary particle size of 9 to 60 nm and spherical silica having an average primary particle size of 40 to 600 nm excluding the fumed silica, wherein a content of the whole silicas obtained by totaling the fumed silica and the spherical silica falls in a range of 1 to 40% by weight, and a process for polishing a semiconductor device using the polishing slurry described above.

Polishing slurry and polishing method

Provided is a high purity polishing slurry which provides a material to be polished with a high scratch resistance and has a high polishing efficiency and which less contaminates the material to be polished. The polishing slurry comprises water and silica particles dispersed in water, wherein the above silica particles have an average primary particle size of 50 to 300 nm and a refractive index of 1.41 to 1.44 and are synthesized in a liquid phase and produced without passing through a drying step; and the K value is 5&times;10 mol/m or more. Further, a polishing process for a semiconductor wafer using the above polishing slurry is provided.

An abrasive material is prepared by dispersing silicon nitride particles acting as abrasive particles in a solvent such as a pure water or an ultra pure water, followed by adding an adsorptive stickable to the abrasive particles to the dispersion. The resultant abrasive material permits diminishing the polishing rate of a silicon nitride film used as a stopper film, with the result that a CVD SiO.sub.2 film to be polished is selectively polished relative to the Si.sub.3 N.sub.4 film used as the stopper film. This makes it possible to make the stopper film as thin as possible and permits the CVD SiO.sub.2 film to be flattened efficiently without bringing about a dishing problem.

Abrasive material for polishing a semiconductor wafer, and methods for

A polishing slurry is formed of a silica-dispersed solution obtained by dispersing, in an aqueous solvent, a fumed silica having an average primary particle size of from 5 to 30 nm, the silica-dispersed solution exhibiting a light scattering index (n) of from 3 to 6 at a silica concentration of 1.5% by weight, and the fumed silica dispersed therein having an average secondary particle size of from 30 to 100 nm on the weight basis. The polishing slurry is produced by pulverizing, using a high-pressure homogenizer, a silica-dispersed solution obtained by dispersing a fumed silica in an aqueous solvent, so that the fumed silica possesses an average secondary particle size of from 30 to 100 nm on the weight basis. The polishing slurry is used for polishing semiconductor wafers and inter-layer dielectric in an IC process.

Polishing slurries and a process for the production thereof

The present invention includes a first-language basic input/output control program linked with a first-language OS an a computer and an input/output device for executing first-language application software in object code form, an emulator linked with second-language application software, the first-language basic input/output control program and the first-language OS for executing the second-language application software in object code form and a way of activating and terminating the emulator. Thereby, there is provided a computer system which permits the first-language application software and the second-language application software to be operated using the identical computer, input/output device and first-language OS.

Emulation for executing a second language application program on a

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Tokuyama, Japan

Hiroshi Kato