Nec Corporation

Nec Lcd Technologies, Ltd.

Nagase Co., Ltd.

Sanwa Frost Industry Co., Ltd.

Hiroshi Kanoh

Teruaki Suzuki

Hidenori Ikeno

Masayoshi Suzuki

Toshiya Ishii

Eishi Mizobata

Michiaki Sakamoto

Yuji Yamamoto

Mamoru Okamoto

Ken-Ichi Takatori

Seiji Suzuki

Ken Sumiyoshi

Yoshihiko Hirai

Hiroaki Matsuyama

Kiyomi Kawada

Hironori Kikkawa

Kazushige Takechi

Mitsuru Nakata

Jun Tanaka

Yuichi Yamaguchi

Takahiko Watanabe

Hirofumi Shimamoto

Takashi Nose

Shinichi Nishida

Naoyasu Ikeda

Setsuo Kaneko

Shinichi Nakata

Hiroshi Hayama

Hirofumi Ihara

Narumoto Uesaka

Kazuo Nikami

Mitsura Nakata

A liquid crystal display having a wide viewing angle and easily manufactured. The liquid crystal display comprises an upper substrate and a lower substrate, and a liquid crystal material disposed between the upper substrate and the lower substrate. The liquid crystal display has a conductive protrusion disposed on the surface of the upper substrate opposing to the lower substrate. The conductive protrusion is disposed over a scanning electrode line or a signal electrode line and has the same potential as that of the upper electrode. As another structure, each of pixel electrodes on the lower substrate has a smaller area than that of a common electrode on the upper substrate and is covered by the common electrode, and each of the pixel electrodes comprises an electrode portion having approximately symmetrical shape.

Liquid crystal display and method of manufacturing the same and method of driving the same

A layer-stacked wiring made up of a microcrystalline silicon thin film and a metal thin film is provided which is capable of suppressing an excessive silicide formation reaction between the microcrystalline silicon thin film and metal thin film, thereby preventing peeling of the thin film. In a polycrystalline silicon TFT (Thin Film Transistor) using the layer-stacked wiring, the microcrystalline silicon thin film is so configured that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 60% or more of a film thickness of the microcrystalline silicon thin film amount to 15% or less of total number of crystal grains or that its crystal grains each having a length of the microcrystalline silicon thin film in a direction of a film thickness being 50% or less of a film thickness of the microcrystalline silicon thin film amount to 85% or more of the total number of crystal grains making up the microcrystalline silicon thin film.

Method of manufacturing layer-stacked wiring

A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the first irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.

Method and apparatus for irradiating laser

A device is disclosed for generating pattern data for unevenness that is randomly arranged on the surface of the reflective substrate of a reflective liquid crystal display device. The number of coordinates, a basic pitch, a movable range, and a dot diameter are entered from a data entry unit. An array generation unit regularly arranges base coordinates in two dimensions in accordance with the basic pitch. Coordinate displacement unit randomly displaces within the movable range at a portion of the basic coordinates to generate a multiplicity of displaced coordinates. Pattern generation unit arranges dot patterns with the dot diameter entered at each of the displaced coordinates generated to generate pattern data.

Generation of pattern data with no overlapping or excessive distance between adjacent patterns

Layer-stacked wiring and semiconductor device using the same

Generation of pattern data with no overlapping or excessive distance between adjacent dot patterns

A laser irradiation process includes: scanning a substrate with laser having a predetermined lasing frequency at different irradiation intensities to form a plurality of first irradiation areas corresponding to the irradiation intensities; illuminating the first irradiation areas to reflected light receive from the fist irradiation areas; determining microcrystallization intensity based on the received reflected light; and determining irradiation intensity based on the thus determined microcrystallization intensity. The laser irradiation process uses the irradiation intensity for irradiating a polycrystalline film in a product semiconductor device.

Layer-stacked wiring and method for manufacturing same and semiconductor device using same and method for manufacturing semiconductor device

Method of manufacturing a thin film device substrate wherein no trench fabrication is required to be applied onto the substrate surface, and a material which is impervious to light can be used, and the substrate can be peeled off quickly. Firstly, a peeling-off film, a silicon oxide film and an amorphous silicon film are formed in succession on a glass substrate, and the amorphous silicon film is irradiated from above to obtain a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded thereon, and finally the glass substrate is peeled off with the peeling-off film, to complete transfer of the TFT. Because the peeling-off film has a gap space, its etching rate is high. Therefore, it is unnecessary to form a trench for supplying an etchant on the surface of the glass substrate.

Manufacturing method of thin film device substrate

In a liquid crystal display device comprising a first substratehaving a color filter, a second substrateand a liquid crystal layer disposed therebetween, a color filter layeris disposed on a protection filmof a thin film transistor formed on the first substrateso as to be partitioned by a light shielding portion, and a common electrodeis disposed thereon. A pixel electrode to be connected to a source electrodeis disposed through a through hole formed in an overcoat layer (interlayer separation film). On the first substrate below the color filter layerare provided plural scan signal electrodes, plural video signal electrodes crossing the scan signal electrodes in a matrix form, plural thin film transistors formed in association with the crossing points between the electrodes. Each pixel is provided with a common electrodewhich is connected over plural pixels through a common electrode wire to supply reference potential, and a pixel electrodewhich is connected to the corresponding thin film transistor and disposed so as to confront the common electrode in the pixel area.

Liquid crystal display device and method of manufacturing the same

A liquid crystal display device includes (a) a first substrate, (b) a second substrate spaced away from and facing the first substrate, (c) a liquid crystal layer sandwiched between the first and second substrates, (d) a transistor formed on the first substrate, (e) a wiring layer formed on the first substrate and electrically connected to the transistor, (f) a reflection electrode formed on the first substrate, an external incident light being reflected at the reflection electrode towards a viewer, and (g) a compensation layer formed directly on the wiring layer. The reflection electrode does not cover the wiring layer therewith, and the compensation layer has almost the same height as a height of the reflection electrode, the height being measured from a surface of the first substrate.

Method of fabricating reflection type liquid crystal display

In a manufacturing method of a flexible device, when a protective material is adhered onto a surface of a substrate, the adhesion is performed at only a part of the substrate. Since being adhered to the part of the substrate, the protective material is easily peeled away. As a result, the time required for peeling can be decreased, and cracking of the device which may occur in peeling can be prevented.

Manufacturing method of a device

An object of the present invention is to prevent the thin film device formed by laser annealing from making, due to overheat, abnormal operations. Firstly, on a glass substrate. a heat insulating film, a silicon oxide film and an amorphous silicon film are formed in succession, and the amorphous silicon film is irradiated from above with a laser beam of an excimer laser. After being molten, the amorphous silicon film undergoes recrystallization to form a polycrystalline silicon film. Subsequently, using the polycrystalline silicon film as an active layer, a TFT is formed, and then a plastic substrate is bonded onto the TFT, and finally the glass substrate is peeled off by way of the heat insulating film, whereby a transfer of the TFT is completed. Because the heat insulating film is removed, abnormality caused by overheat at the time of operation is well prevented from occurring.

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Tokyo, Japan

Hiroshi Kanoh