Sanyo Electric Co., Ltd.

Semiconductor Components Industries, LLC

Hiroshi Kanamori

Yuichi Morita

Takashi Noma

Yukihiro Takao

Shinzo Ishibe

Hisao Otsuka

Akira Suzuki

Shigeki Otsuka

The invention is directed to prevent corrosion of a semiconductor device. In the semiconductor device manufacturing method of the invention, a semiconductor substrate is etched from its back surface in a position corresponding to a first wiring formed on the semiconductor substrate with a first insulation film therebetween, to form a first opening exposing the first insulation film. Next, the insulation film exposed in the first opening is etched to form a second opening exposing the first wiring, and then the semiconductor substrate is etched to increase a diameter of the first opening and form a first opening having the larger diameter. Then, a second insulation film is formed on the back surface of the semiconductor substrate including on the first wiring through the first and second openings, and then the second insulation film covering the first wiring is etched.

Semiconductor device and manufacturing method of the same

The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate, a first passivation film covering an end portion of the pad electrode and having a first opening on the pad electrode, a plating layer formed on the pad electrode in the first opening, a second passivation film covering an exposed portion of the pad electrode between an end portion of the first passivation film and the plating layer, covering an end portion of the plating layer, and having a second opening on the plating layer, and a conductive terminal formed on the plating layer in the second opening.

The invention prevents a pad electrode for external connection of a semiconductor device from being damaged. An electronic circuit, a first pad electrode connected to the electronic circuit, and a second pad electrode connected to the first pad electrode are formed on a semiconductor substrate. A first protection film is formed, covering the first pad electrode and having an opening on the second pad electrode only. A wiring layer is further formed, being connected to the back surface of the first pad electrode through a via hole penetrating the semiconductor substrate and extending from the via hole onto the back surface of the semiconductor substrate.

Semiconductor device with pad electrode for testing and manufacturing method of the same

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Tokyo, Japan

Hiroshi Kanamori