International Business Machines Corporation

Other

Shipley Company LLC

Jsr Corporation

Promerus, Lcc

Rohm & Haas Electronic Materials LLC

Hiroshi Ito

Linda Karin Sundberg

Gregory Breyta

Richard Anthony DiPietro

Mark Whitney Hart

Frances Anne Houle

Phillip Joe Brock

Carlton G Willson

Robert David Allen

Gregory Michael Wallraff

Scott Arthur MacDonald

Ronald Anthony DellaGuardia

Ratnam Sooriyakumaran

Daniel Sanders

Pushkara Rao Varanasi

Ho-Cheol Kim

Joy Cheng

Richard Anthony Dipietro

Hoa D Truong

Robert Dennis Miller

Larry Funderburk Rhodes

Wayne Martin Moreau

James W Thackeray

Jean M Frechet

Daniel Joseph Dawson

Donald Clifford Hofer

George G Barclay

Martin J Goldberg

Yukio Nishimura

Kuang-Jung Chen

Michael J Palmer

Tsutomu Shimokawa

Masafumi Yamamoto

Leah Langsdorf

William Dinan Hinsberg

Toru Kajita

Caroline A Kovac

Thomas Ingolf Wallow

Christopher John Knors

Roger Alan Pollak

Chun S Chang

George J Hefferon

Juliann Opitz

Paige A Poore

Michael F Cronin

Noboru Yamahara

Howard A Sidaway

Greg Breyta

Atsuko Ito, Legal Representative

Wu-Song S Huang

James F Cameron

Robert Lavin Wood

Saikumar Jayaraman

Young-Hye Na

Roger F Sinta

Ashish A Pandya

Richard Vicari

Ranee W Kwong

Ahmad D Katnani

Harbans S Sachdev

George W Orsula

William R Brunsvold

Luisa Dominica Bozano

Willard E Conley

Leo L Linehan

James Michael Mori

Nicholas J Clecak

George M Jordhamo

Randolph J Smith

Premlatha J Jagannathan

Elwood Herbert Macy

Andrew Robert Eckert

Stanley E Perreault

Ming-Fea Chow

Anders Hult

Thomas I Wallow

Dale M Crockatt

Nancy E Iwamoto

David Paul Merritt

Dolores Carlotta Miller

Kathleen H Martinek

Mitsuru Ueda

Charlotte R DeWan

Moahmoud Mostafa Khojasteh

Tomonari Nakayama

Ronald A Dellaguardia

The present invention relates to a composition comprising a photoresist polymer and a fluoropolymer. In one embodiment, the fluoropolymer comprises a first monomer having a pendant group selected from alicyclic bis-hexafluoroisopropanol and aryl bis-hexafluoroisopropanol and preferably a second monomer selected from fluorinated styrene and fluorinated vinyl ether. The invention composition has improved receding contact angles with high refractive index hydrocarbon fluids used in immersion lithography and, thereby, provides improved performance in immersion lithography.

Photoresist compositions and methods of use in high index immersion lithography

A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.

Methods of directed self-assembly and layered structures formed therefrom

A method of forming an image on a photoresist. The method includes: forming a photoresist over a substrate; applying a topcoat composition, the topcoat composition comprising at least one fluorine-containing polymer and a casting solvent, onto the photoresist; removing the casting solvent of the topcoat composition resulting in the formation of a topcoat material over the photoresist; exposing the photoresist to radiation, the radiation changing a chemical composition of the regions of the photoresist exposed to the radiation, forming exposed and unexposed regions in the photoresist; and removing i) the topcoat material and ii) the exposed regions of the photoresist or the unexposed regions of the photoresist.

Method for using a topcoat composition

A molding composition and a method of forming a pattern. The method includes forming on a substrate a molding layer of a molding composition of aromatic divinyl ethers; pressing the template into the molding layer, the template having a relief pattern, the molding layer filling voids in the relief pattern, the template not contacting the substrate; exposing the molding layer to actinic radiation, the actinic radiation converting the molding layer to a cured molding layer having thick and thin regions corresponding to the relief pattern; removing the template; filling the thin regions of the relief pattern with a backfill material; removing regions of the molding layer not protected by the backfill material to expose regions of the substrate; forming trenches in the exposed regions of the substrate; and removing any remaining molding layer and backfill material. A transfer layer may be used between the molding layer and the substrate.

Aromatic vinyl ether based reverse-tone step and flash imprint lithography

A stable viscosity coating composition, a method of forming the stable viscosity coating composition and a method for using the stable viscosity coating composition in a micro-molding imprint lithographic process, such as Step and Flash Imprint Lithography is disclosed. The stable viscosity coating composition may include at least one vinyl ether having at least one vinyl ether group (&#x2014;OCR&#x2550;CR), and a stabilizer, wherein the stabilizer may be 9-anthracenemethanol, a substituted 9-anthracenemethanol, phenothiazine, or a substituted phenothiazine. The coating composition may include a radiation sensitive photoacid generator (PAG). The method of forming the coating composition comprises combining at least one vinyl ether having at least one vinyl ether group (&#x2014;OCR&#x2550;CR), and at least one stabilizer.

Stabilization of vinyl ether materials

A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.

Methods for forming surface features using self-assembling masks

Bilayer systems include a bottom layer formed of polydimethylglutarimide, an acid labile dissolution inhibitor and a photoacid generator. The bilayer system can be exposed and developed in a single exposure and development process.

Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof

A molding composition and a method of forming an pattern. The method includes forming on a substrate a molding layer of a molding composition of aromatic divinyl ethers; pressing the template into the molding layer, the template having a relief pattern, the molding layer filling voids in the relief pattern, the template not contacting the substrate; exposing the molding layer to actinic radiation, the actinic radiation converting the molding layer to a cured molding layer having thick and thin regions corresponding to the relief pattern; removing the template; filling the thin regions of the relief pattern with a backfill material; removing regions of the molding layer not protected by the backfill material to expose regions of the substrate; forming trenches in the exposed regions of the substrate; and removing any remaining molding layer and backfill material. A transfer layer may be used between the molding layer and the substrate.

A method of forming an image. The method includes: a transfer layer on a substrate; forming on the transfer layer, an etch barrier layer; pressing a template having a relief pattern into the etch barrier layer; exposing the etch barrier layer to actinic radiation forming a cured etch barrier layer having thick and thin regions corresponding to the relief pattern; removing the template; removing the thin regions of the cured etch barrier layer; removing regions of the transfer layer not protected by the etch barrier layer; removing regions of the substrate not protected by the transfer layer and any remaining etch barrier layer; and removing remaining transfer layer. The transfer layer may be removed using a solvent, the etch barrier layer may include a release agent and an adhesion layer may be formed between the transfer layer and the etch barrier layer. A reverse tone process is also described.

Processes and materials for step and flash imprint lithography

A topcoat composition. The topcoat composition includes a fluorine-containing polymer and a casting solvent that includes an alcohol.

Topcoat composition

Photoresist compositions include a blend of at least one fully protected calix[4]resorcinarene and at least one unprotected calix[4]resorcinarene, wherein the fully protected calix[4]resorcinarene has phenolic groups protected with acid labile protective groups; a photoacid generator; and a solvent, and wherein the blend and the photoacid generator are soluble in the solvent. Also disclosed are processes for generating a resist image on a substrate using the photoresist composition.

Calixarene blended molecular glass photoresists and processes of use

Copolymers prepared by copolymerization of at least one fluorinated vinyl ether are provided. In one embodiment, the at least one fluorinated vinyl ether comprises ethylene directly substituted at an olefinic carbon atom with a moiety &#x2014;OR* and optionally substituted with one, two, or three additional nonhydrogen substituents, wherein R* comprises a fluorinated alkyl moiety substituted with a protected or unprotected hydroxyl group, and further wherein an atom within R* may be (i) taken together with one of the additional nonhydrogen substituents, if present, or (ii) directly bound to an olefinic carbon atom, to form a ring. The polymers are useful, for example, in lithographic photoresist compositions, particularly chemical amplification resists. In a preferred embodiment, the polymers are substantially transparent to deep ultraviolet (DUV) radiation, and are thus useful in DUV lithographic photoresist compositions. A method for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions

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San Jose, CA, United States of America

Hiroshi Ito