Denso Corporation

Hiroshi Ishino

Tomokazu Watanabe

Shoichiro Omae

Takuo Nagase

Shinji Hiramitsu

Ryota Tanabe

Tomohisa Sano

Kazuhiro Tsuruta

Noriyuki Kakimoto

Yasutomi Asai

Nobuyuki Kato

Tomoo Morino

Hideki Kawahara

Kosuke Kamiya

Shunsuke Arai

Hirokazu Sampei

Ryota Miwa

Takao Izumi

Atsushi Ikegame

Yousuke Jinsei

A semiconductor device includes: a semiconductor element having a first main electrode and a second main electrode; a first heat dissipation member and a second heat dissipation member; and a lead frame including a first main terminal connected to the first heat dissipation member and a second main terminal connected to the second main electrode. The second main terminal includes a connection portion connected with the second main electrode, a facing portion extending from the connection portion and facing the first heat dissipation member, and a non-facing portion. The non-facing portion and the first main terminal are arranged in a direction orthogonal to a thickness direction. A side surface of the first main terminal and a side surface of the non-facing portion of the second main terminal face each other.

Semiconductor device

A semiconductor module includes: a semiconductor element having a first main electrode and a second main electrode; a first conductive member and a second conductive member connected to the first main electrode and the second main electrode, respectively, and placed to sandwich the semiconductor element; and a main terminal including a first main terminal continuous from the first conductive member and a second main terminal continuous from the second conductive member. The main terminal has a facing portion, a non-facing portion, a first connection portion, and a second connection portion. In a width direction, a formation position of the second connection portion overlaps with a formation position of the first connection portion.

Semiconductor module

A semiconductor device includes: multiple semiconductor elements each having a one surface and a rear surface in a plate thickness direction; a first member that sandwiches the multiple semiconductor elements and is electrically connected to an electrode on the one surface; a second member electrically connected to an electrode on the rear surface; and multiple terminals that are continuous from the first or second member. An area of the second member is smaller than that of the first member. Semiconductor elements are arranged in a longitudinal direction of the second member. The semiconductor device further includes a first joint portion that electrically connects each semiconductor element and the second member and a second joint portion that electrically connects a terminal and the second member. The multiple solder joint portions are symmetrically placed.

Plurality of chips between two heat sinks

In a semiconductor device, a first lead frame and a second lead frame are fixed to a metal conductor base by an organic insulating film made of a polyimide-based material. The organic insulating film satisfies relationships of t&#x3e;tand t&#x3e;t, where tis a thickness of a portion of the organic insulating film sandwiched between the metal conductor base and the first lead frame, tis a thickness of a portion of the organic insulating film sandwiched between the metal conductor base and the second lead frame, and tis a thickness of a portion of the organic insulating film that is not sandwiched between the metal conductor base and the first lead frame and is not sandwiched between the metal conductor base and the second lead frame.

Semiconductor device and maunfacturing method of semiconductor device

A semiconductor device configures one arm of an upper-lower arm circuit, and includes: a semiconductor element that includes a first main electrode and a second main electrode, wherein a main current between the first main electrode and the second main electrode; and multiple main terminals that include a first main terminal connected to the first main electrode and a second main terminal connected to the second main electrode. The first main terminal and the second main terminal are placed adjacent to each other; A lateral surface of the first main terminal and a lateral surface of the second main terminal face each other in one direction orthogonal to a thickness direction of the semiconductor element.

Semiconductor device including a semiconductor chip connected with a plurality of main terminals

The semiconductor device includes a semiconductor element, a first conductive member, a second conductive member, an insulating member, a first main terminal, and a second main terminal. The first main terminal and the second main terminal, respectively, extend from the first conductive member and the second conductive member. The first main terminal and the second main terminal, respectively, have a first projecting portion and a second projecting portion projecting outside of the insulating member. The first projecting portion and the second projecting portion, respectively, have a first facing portion and a second facing portion at which plate surfaces of the first and second projecting portions face each other across a gap, and a first non-facing portion and a second non-facing portion at which the plate surfaces of the first and second projecting portions do not face each other.

In a semiconductor device, a plurality of semiconductor chips included in an upper-arm circuit are connected in parallel between a pair of upper-arm plates, while a plurality of semiconductor chips included in a lower-arm circuit are connected in parallel between a pair of lower-arm plates. In each of the arm circuits, the plurality of semiconductor chips are arranged in a direction perpendicular to a direction in which emitter electrodes and pads are arranged, the pads are disposed on the same side of the emitter electrodes, and signal terminals extend in the same direction. A series-connecting part between the upper- and lower-arm circuits includes a joint partcontinued to respective side surfaces of the corresponding upper- and lower-arm plates. Each of inductances of respective parallel-connecting parts of the upper- and lower-arm plates which connect the semiconductor chips in parallel is smaller than an inductance of the series-connecting part.

A semiconductor device includes a semiconductor chip formed using a silicon carbide and having electrodes on a first surface and a second surface opposite to the first surface, a terminal disposed adjacent to the first surface and connected to the electrode on the first surface through a bonding member, and a heat sink disposed adjacent to the second surface and connected to the electrode on the second surface through a bonding member. The first surface is a (0001) plane and a thickness direction of the semiconductor chip corresponds to a [0001] direction. Of the distances between the end portions of the semiconductor chip having a square two-dimensional shape and the end portions of the terminal having a rectangular two-dimensional shape, the shortest distance Lin a [1-100] direction is shorter than the shortest distance Lin a [11-20] direction.

A semiconductor module includes upper arms and lower arms for three phases, heat sinks, a main circuit side bus bar, an output terminal side bus bar, a control terminal, and a resin mold portion. The output terminal side bus bar includes U-phase to W-phase wiring layers disposed opposite to each other via an insulating layer and U to W terminals electrically connecting each of the U-phase to W-phase wiring layer and a load. A stacked layer number of the U-phase to W-phase wiring layer is set to be an even number.

Semiconductor module with bus bar including stacked wiring layers

A power conversion device is capable of achieving three requirements to restrict a surge voltage, ensure high radiation performance of SW elements, and restrict ringing at the same time. In a power conversion device, element modules of two SW elements are stacked in a thickness direction via an insulating layer in such a manner that lateral surfaces are aligned parallel to each other in a same orientation, and a positive terminal of one SW element and a negative terminal of the other SW element are disposed so as to overlap each other in the thickness direction.

Power conversion device having two serially-connected switching elements

A semiconductor module is configured such that heat radiation substrates are connected to lead frames and semiconductor chips are directly connected to the lead frames, so that the semiconductor chips are not connected to the lead frames through conductive portions of the heat radiation substrates. Therefore, the conductive portions can have a solid shape without being divided. As such, an occurrence of curving of the heat radiation substrates is suppressed when a temperature is reduced from a high temperature to a room temperature after resin-sealing at the high temperature or the like. Therefore, connection between the semiconductor chip and the lead frames and connection between the lead frames and the heat radiation substrates enhance.

Semiconductor module, semiconductor device having semiconductor module, and method of manufacturing semiconductor module

In a semiconductor device, heat radiation plates are respectively disposed on a front surface side and a rear surface side of semiconductor chips in an upper arm and a lower arm. A lead-out conductor part includes a parallel conductor that includes a positive electrode terminal, a negative electrode terminal, and an insulating film disposed between the positive electrode terminal and the negative electrode terminal, and the positive electrode terminal and the negative electrode terminal are disposed oppositely while sandwiching the insulation film. The semiconductor chips are covered by a resin mold part, surfaces of the heat radiation plates opposite to the semiconductor chips, a part of the positive electrode terminal, and a part of the negative electrode terminal are exposed from the resin mold part, and at least a part of the parallel conductor in the lead-out conductor part enters the resin mold part.

Semiconductor device and semiconductor device connection structure

A semiconductor module is configured such that heat radiation substrates are connected to lead frames and semiconductor chips are directly connected to the lead frames, so that the semiconductor chips are not connected to the lead frames through conductive portions of the heat radiation substrates. Therefore, the conductive portion can have a solid shape without being divided. As such, an occurrence of curving of the heat radiation substrates is suppressed when a temperature is reduced from a high temperature to a room temperature after resin-sealing at the high temperature or the like. Therefore, connection between the semiconductor chip and the lead frames and connection between the lead frames and the heat radiation substrates enhance.

An electronic device includes an electronic component, a joining member to be mechanically joined with the electronic component, and a metal conductor located between the electronic component and the joining member to mechanically join the electronic component and the joining member. The metal conductor is made of porous noble metal to have pores, and includes an end surface without being covered by the electronic component and the joining member. Furthermore, a reinforcing resin is impregnated from the end surface of the metal conductor to the pores inside of the metal conductor, so as to mechanically reinforce the metal conductor.

Electronic device and method of manufacturing the same

A semiconductor device includes: a semiconductor element having first and second surfaces, wherein the semiconductor element includes at least one electrode, which is disposed on one of the first and second surfaces; and first and second metallic layers, wherein the first metallic layer is disposed on the first surface of the semiconductor element, and wherein the second metallic layer is disposed on the second surface of the semiconductor element. The one electrode is electrically coupled with one of the first and second metallic layers, which is disposed on the one of the first and second surfaces. The one electrode is coupled with an external circuit through the one of the first and second metallic layers.

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Kariya, Japan

Hiroshi Ishino