National Institute of Advanced Industrial Science and Technology

Hitachi Cable, Inc.

National Institute of Information and Communications Technology, Incorporated

Keio University

Japan Science and Technology Corporation

Hiroshi Ishikawa

Hisato Uetsuka

Masahiko Mori

Toshifumi Hasama

Hiroyuki Tsuda

Hitoshi Kawashima

Hidemi Tsuchida

Takashi Shimoyama

Abedin Kazi Sarwar

Tetsuya Miyazaki

Kenji Kintaka

Keisuke Sorimoto

Hiroki Tanaka

Mamoru Mita

Norio Okabe

Yasuharu Kameyama

Kenjiro Miyano

Katsutoshi Taga

Teruo Mozume

Hiroharu Tamaru

Ryouichi Akimoto

Takayuki Sato

Masanori Nagase

Shinichirou Gozu

Ryoichi Akimoto

An object of the present invention is to realize an optical gate switch of a monolithic integration type which can avoid problems of losses caused by light coupling of a phase modulation unit to a interferometer optical circuit unit, and can be minimized by integration. The optical gate switch according to the present invention includes an optical waveguide wafer in which a quantum well having a phase modulation effect which is generated by an intersubband transition is set as a core layer; a Michelson interferometer formed on the optical waveguide wafer; and a variable light intensity attenuation unit adjusting a light balance of an interferometer in one of reflection side arms of the Michelson interferometer reflection.

Optical gate switch

To provide a waveguide type wavelength domain optical switch which makes it possible to use a cheap lens, makes it possible to correct aberration of the demultiplexed wavelengths produced in a plurality of waveguide type demultiplexing circuits, a wavelength domain optical switch is provided with: an integrated element formed by laminating three or more waveguide type demultiplexing circuits; a first lens for collecting light emitted from the integrated element; a polarization separation element for separating light emitted from the first lens into X polarization and Y polarization and emitting the X polarization and the Y polarization at different angles; a second lens for collecting the X polarization and the Y polarization; a first reflective optical phase modulator for reflecting the collected X polarization and Y polarization at any angles; a &#xbd;-wavelength plate disposed between the second lens and the first reflective optical phase modulator in order to make polarization directions of the X polarization and the Y polarization identical; and a second reflective optical phase modulator for inputting light from the first reflective optical phase modulator into one of the waveguide type demultiplexing circuits.

Wavelength domain optical switch

An optical waveguide-type wavelength domain switch includes a waveguide-type multi/demultiplexing device laminate comprising three or more laminated waveguide-type multi/demultiplexing devices, a lens system positioned on a demultiplex side of the waveguide-type multi/demultiplexing device laminate, and a reflective optical phase-modulating cell positioned on an opposite side of the waveguide-type multi/demultiplexing device laminate to the lens system. The lens system includes a lens alignment composed of plural lenses in one-to-one correspondence with the waveguide-type multi/demultiplexing devices and having a light-collecting or collimating function in the lens-aligning direction, an image-magnifying optical system having an N:1 (N&#x3e;1) image-magnifying function arranged on the optical phase-modulating cell side of the lens alignment, an f-f lens (Y) arranged on the optical phase-modulating cell side of the image-magnifying optical system, and having a light-collecting or collimating function in the same direction as the lens-aligning direction of the lens alignment, and an f-f lens (X) having a light-collecting or collimating function in a perpendicular direction to the lens-aligning direction of the lens alignment.

Optical waveguide-type wavelength domain switch

In the production of optical devices or the like utilizing an intersubband transition of a coupled quantum well, a quantum well structure having strong coupling is provided. In addition, a coupled well structure of excellent productivity capable of avoiding thinning of coupling barrier layer for strengthening the coupling is provided. In the semiconductor coupled well structure of the present invention, a coupled quantum well structure disposed on the semiconductor single crystal substrate includes a coupling barrier layerdisposed between two or more quantum well layersand, wherein the coupling barrier layerhas an energy barrier that is smaller than an excitation level (Eand E) and is larger than a ground level (Eand E).

Coupled quantum well structure

An optical gate switch circuit includes: an asymmetric Mach-Zehnder interferometer having an optical path that outputs control light and probe light to a second optical directional coupler via a first optical directional coupler and an optical phase modulation element, and another optical path that connects a third optical directional coupler to which the probe light is input, to the second optical directional coupler via a variable optical attenuator and an optical phase shifter; and a bandpass filter connected to the second optical directional coupler.

Optical signal processing circuit

An optical phase modulation circuit includes an optical phase modulation element, an optical bandpass filter, and an optical directional coupler, wherein control light with a wavelength of &#x3bb;is coupled with probe light with a wavelength of &#x3bb;using the optical directional coupler and input to the optical phase modulation element, the probe light that has been phase modulated by the optical phase modulation element is extracted through the optical band pass filter, and the phase of the probe light is modulated in response to the intensity of the control light.

A waveguide type wavelength domain optical switch includes an input/output port including at least three waveguide spectrometers stacked in thickness direction, a first lens for collecting light outputted from an input port of the input/output port in one axis direction, a second lens for collecting light outputted from the first lens in a direction orthogonal to the collecting direction of the first lens, and an optical phase modulation cell for reflecting light outputted from the second lens through the second lens and the first lens to an output port of the input/output port. Alternatively, the input/output port may include at least two waveguide spectrometers and a waveguide optical coupler circuit stacked in thickness direction.

Waveguide type wavelength domain optical switch

An optical waveguide coupler relaxes a phase matching condition and facilitates coupling between an optical waveguide and a resonator. Light in a multimode optical waveguide is coupled directly to a microsphere resonator via evanescent light. Under a nonresonance condition, influence of the microsphere resonator is small, and light propagation through the multimode optical waveguide is not influenced. However, since the intensity of the light stored in the microsphere resonator is high under the resonance condition, even if the coupling efficiency is low, the microsphere resonator outputs light of approximately the same power as that of the light in the multimode optical waveguide. Therefore, a strong coupling condition is always satisfied, and the optical waveguide coupler functions as a filter due to the interference between the light in the multimode optical waveguide and the light that has passed through the microsphere resonator.

Optical waveguide coupler

A method of manufacturing a double-sided circuit tape carrier comprising an insulating film like a polyimide tape, circuit wiring patterns on both sides thereof, and via holes through which at least a part of the circuit wiring patterns on both sides are electrically connected with each other. A copper thin film is patterned by photoetching. Via holes are formed through the insulating film by irradiating a laser beam by using the patterned copper thin film as a mask. Then, a conductive layer of a graphite conductive thin film and a copper plating layer is formed. The copper thin film is patterned by photoetching forming a chip hole and an outer lead hole through the insulating film by irradiating a laser beam. Finally, one of the copper thin films is patterned by photoetching to form circuit wiring pattern.

Method of manufacturing double-sided circuit tape carrier

Growing community of inventors

Tsukuba, Japan

Hiroshi Ishikawa