Renesas Electronics Corporation

Renesas Technology Corp.

Hitachi Tobu Semiconductor

Hitachi Ulsi Systems Co., Ltd.

Other

Hitachi, Ltd.

Renesas Eastern Japan Semiconductor, Inc.

Renesas Semiconductor Package & Test Solutions Co., Ltd.

Hiroshi Inagawa

Nobuo Machida

Kentaro Oishi

Kentaro Ooishi

Atsushi Kurokawa

Yoshinori Imamura

Toshiaki Kitahara

Kenji Sasaki

Yasunari Umemoto

Isao Obu

Tatsuhiko Ikeda

Takashi Tonegawa

Ikuro Akazawa

To improve reliability of a semiconductor device. There are provided the semiconductor device and a method of manufacturing the same, the semiconductor including a pad electrode that is formed over a semiconductor substrate and includes a first conductive film and a second conductive film formed over the first conductive film, and a plating film that is formed over the second conductive film and used to be coupled to an external connection terminal (TR). The first conductive film and the second conductive film contains mainly aluminum. The crystal surface on the surface of the first conductive film is different from the crystal surface on the surface of the second conductive film.

Semiconductor device and method of manufacturing the same

In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.

Insulated gate type semiconductor device and method for fabricating the same

A semiconductor device has an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper surface of the trench-gate conductive layer is formed equal to or higher than the main surface of the semiconductor substrate. The conductive layer of the trench gate is formed to have a substantially flat or concave upper surface and the upper surface is formed equal to or higher than the main surface of the semiconductor substrate. After etching of the semiconductor substrate to form the upper surface of the conductive layer of the trench gate, a channel region and a source region are formed by ion implantation so that the semiconductor device is free from occurrence of a source offset.

Semiconductor device and method for fabricating the same

Described is a method for fabricating a semiconductor device having an FET of a trench-gate structure obtained by disposing a conductive layer, which will be a gate, in a trench extended in the main surface of a semiconductor substrate, wherein the upper surface of the trench-gate conductive layer is formed equal to or higher than the main surface of the semiconductor substrate. In addition, the conductive layer of the trench gate is formed to have a substantially flat or concave upper surface and the upper surface is formed equal to or higher than the main surface of the semiconductor substrate. Moreover, after etching of the semiconductor substrate to form the upper surface of the conductive layer of the trench gate equal to or higher than the main surface of the semiconductor substrate, a channel region and a source region are formed by ion implantation. The semiconductor device thus fabricated according to the present invention is free from occurrence of a source offset.

In a reverse conducting IGBT, diode cathode regions are formed dispersedly on the back side of a device chip. When the distribution density of the diode cathode region becomes low, VF of a fly-back diode, that is, a forward voltage drop becomes large. On the other hand, when the distribution density of the diode cathode region becomes high, it becomes hard for a PN junction at a collector part to turn ON and a snap back occurs. In contrast to this, there is a method of providing about one to several diode cathode absent regions having a macro area, however, the arrangement of the regions itself directly affects the device characteristics, and therefore, it is difficult to control the device characteristics and variations thereof. In the present invention, dot-shaped diode cathode regions on the back side of the device chip are distributed into the shape of a substantially uniform XY lattice and at the same time, the lattice constant in a Y direction is made longer than that in an X direction in parallel with a linear gate electrode in a reverse conducting IGBT having a large number of the linear gate electrodes.

Reverse conducting IGBT

Growing community of inventors

Maebashi, Japan

Hiroshi Inagawa