Komatsu Electronic Metals Co., Ltd.

Komatsu Denshi Kinzoku Kabushiki Kaisha

Kabushiki Kaisha Komatsu Seisakusho

Sumco Techxiv Corporation

Mitsubishi Hitachi Power Systems, Ltd.

Komatsu Corporation

Mitsubishi Chemical Corporation

Mitsubishi Rayon Company, Limited

Kabushiki Kaishi Toshiba

Hiroshi Inagaki

Shigeki Kawashima

Junsuke Tomioka

Shoei Kurosaka

Makoto Kamogawa

Yoshinobu Hiraishi

Toshirou Kotooka

Fumitaka Ishikawa

Tadashi Hata

Masahiro Shibata

Atsushi Kawamura

Kentaro Nakamura

Shigeo Morimoto

Hiroshi Monden

Kozo Nakamura

Akihiko Shirota

Susumu Maeda

Toshiaki Saishoji

Tadayuki Hanamoto

Daisuke Ebi

Jun Tajika

Kengo Hayashi

Hirotaka Nakajima

Aki Tabata

Hidetoshi Kurogi

Tatsuhiro Fujiyama

Noritake Suzuki

Nobuyuki Yamamoto

Toshimichi Kubota

Yukio Kobayashi

Mitsunori Kawabata

Yusuke Oka

Yoshiyuki Shimanuki

Takuji Okumura

Takeki Nakayama

Teruhiko Uchiyama

Mitsuhiro Adachi

Takahiko Kunisawa

Akihiro Iida

Akihito Ishimura

Makoto Kamachi

Yukie Suzuno

Katsura Yamamoto

Masanori Honma

Ayumi Suda

Nobuyuki Fukuda

A heat treatment furnace device for heat-treating precursor fiber bundles of carbon fibers, having: a heat treatment chamber, in which continuously supplied precursor fiber bundles are treated with hot air, a hot air circulation path, through which hot air from the heat treatment chamber returns to the heat treatment chamber, and a condensation/separation device, into which the hot air flowing through the hot air circulation path is introduced and separated into a condensate and a gas; wherein the condensation/separation device has: a condensation treatment chamber and a condensation unit, which is provided in the condensation treatment chamber and has condensation surfaces on which the condensate is formed and allowed to drip down.

Heat treatment furnace device and method for producing carbon fiber bundle

A fixing device fixes a relative position in a rotational direction of an outer member and an inner member of a stationary body of the rotary machine, and includes: a radial pin that is inserted into a through hole passing through the outer member in a radial direction of a rotary machine and having a stepped portion formed therein to have a larger diameter at a portion on an outer side in the radial direction of the rotary machine than at a portion on an inner side in the radial direction, that has a part on the inner side in the radial direction of the rotary machine to be inserted into a concave portion of the inner member, and that has a flange portion on the outer side in the radial direction of the rotary machine.

Fixing device, rotary machine, manufacturing method of rotary machine, assembling method of rotary machine, and disassembling method of rotary machine

A position adjustment device is provided with an eccentric pin and a push rod. The eccentric pin has a rotating shaft part, and an eccentric shaft part inserted into an end in a circumferential direction of a lower-half inside member. The push rod is inserted into the lower-half inside member from an end surface in the circumferential direction of the lower-half inside member, the push rod being able to come into contact with the eccentric shaft part within the lower-half inside member. The rotating shaft part has a columnar shape with a rotational axis line. The eccentric shaft part is formed with: a side peripheral surface that comes into contact with the inner peripheral surface of an eccentric shaft hole in the lower-half inside member into which the eccentric shaft part is inserted, and a rod contact surface that comes into contact with the push rod.

Position adjustment device, rotating machine provided with same, and position adjustment method

A semiconductor device includes a substrate having a first surface, a height adjuster mounted on the first surface of the substrate via a first adhesive layer, a semiconductor chip mounted on the height adjuster via a second adhesive layer, an electronic component mounted on the first surface of the substrate via a third adhesive layer, a bonding wire, and a sealing member. The length of the electronic component in a first direction corresponding to the thickness direction of the substrate is larger than the length of the semiconductor chip in the first direction, and the sum of the lengths of the height adjuster, the second adhesive layer, and the semiconductor chip in the first direction is larger than the length of the electronic component in the first direction.

Semiconductor device

A method for manufacturing a single crystal semiconductor, in which, in a process of pulling up the single crystal semiconductor from melt for growing it, an impurity is incorporated more uniformly into the single crystal semiconductor so that a variation in impurity concentration across the semiconductor wafer surface can be reduced, and thus, the planarity of the wafer can be improved. In the process of pulling-up the single crystal semiconductor (), fluctuation in a pulling-up speed is controlled, whereby the variation in concentration of the impurity in the single crystal semiconductor () is reduced. Especially, a width of speed fluctuation (&#x394;V) in 10 seconds is adjusted to less than 0.025 mm/min. Furthermore, in carrying out the control for adjusting the pulling-up speed such that a diameter of the single crystal semiconductor () becomes a desired diameter, a magnetic field having strength of 1,500 gauss or more is applied to the melt ().

Method for manufacturing single crystal semiconductor

In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Apparatus for pulling single crystal by CZ method

A single crystal semiconductor manufacturing method for realizing a dislocation-free single crystal while not varying or hardly varying electric power supplied to a heater when and after a seed crystal comes into contact with a melt. The allowable temperature difference &#x394;Tc not causing dislocation in the seed crystal is determined according to the concentration (C) of the impurities added to the seed crystal () and the size (diameter D) of the seed crystal (). When the seed crystal () comes into contact with the melt (), electric power supplied to a bottom heater () is fixed, and a magnetic field produced by a magnet () is applied to the melt (). Electric power supplied to a main heater () is controlled so that the temperature at the surface of the melt () which the seed crystal () comes into contact with may be a target value. After the seed crystal () comes into contact with the melt (), single crystal silicon is pulled up without performing a necking process.

Single crystal semiconductor manufacturing apparatus and method

The present invention is to produce a silicon crystal wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so that the boron concentration in the silicon crystal is no less than 1&#xd7;10atoms/cmand the growth condition V/G falls within the epitaxial defect-free region &#x3b1;whose lower limit line LNis the line indicating that the growth rate V gradually drops as the boron concentration increases. A silicon wafer is also produced wherein the boron concentration in the silicon crystal and the growth condition V/G are controlled so as to include at least the epitaxial defect region &#x3b2;, and both the heat treatment condition and the oxygen concentration of the silicon crystal are controlled so that no OSF nuclei grow to OSFs.

Method for producing silicon wafer

A process for producing a single-crystal semiconductor and an apparatus therefor. A single-crystal semiconductor of large diameter and large weight can be lifted with the use of existing equipment not having any substantial change thereto while not influencing the oxygen concentration of single-crystal semiconductor and the temperature of melt and while not unduly raising the temperature of seed crystal. In particular, the relationship (LLL) between the allowable temperature difference (&#x394;T) and the diameter (D) of seed crystal () is preset so that the temperature difference between the seed crystal () at the time the seed crystal () is immersed in the melt and the melt () falls within the allowable temperature difference (&#x394;T) at which dislocations are not introduced into the seed crystal (). In accordance with the relationship (LLL), the allowable temperature difference (&#x394;T) corresponding to the diameter (D) of seed crystal () to be immersed in the melt is determined. Temperature control is conducted so that at the time the seed crystal () is immersed in the melt () the temperature difference between the seed crystal () and the melt () falls within the determined allowable temperature difference (&#x394;T).

Process for producing single-crystal semiconductor and apparatus for producing single-crystal semiconductor

A production device and production method for carbon fibers of the present invention is utilized to reliably obtain a connecting portion having a high process passing property with a simple mechanism so as to achieve a continuous operation and improve a firing process operability for achieving a low cost. A pair of yarn gripping devices for overlaying precursor fiber yarns to be connected one upon another and gripping the overlaid ends is provided, and a fluid processing unit for applying an entangling process by jetting a plurality of rows of fluid in along a yarn length direction is provided between the pair of yarn gripping devices. A plurality of discontinuous thread handling areas of the precursor fiber yarns in a fluid jet area of the fluid processing unit having fluid jet holes are disposed at predetermined intervals.

Production device for carbon fibers and production method therefor

There are provided a system for manufacturing a single-crystal ingot which is equipped with a cooler for cooling the single-crystal ingot being pulled and is capable of forming a tail without involvement of excessive heating of a crucible, as well as to a method for controlling the system. In a system for manufacturing a single-crystal ingot having a cooler for cooling a single-crystal ingot which is being pulled from molten raw material (called a single-crystal pulled ingot), when a tail of the single-crystal pulled ingot is formed, the cooler is moved away from the solid/melt interface between the single-crystal ingot and the molten raw material, to thereby reduce the power dissipated by the system. In the system, the cooler is moved upward after the end of a product area of the single-crystal ingot has been cooled until it passes through a grown-in defect temperature range.

Method and apparatus for manufacturing single-crystal ingot

This invention provides a method and a apparatus capable of manufacturing single crystals with an oxygen density of less than 12&times;10,atoms/cm,or less than 10&times;10,atoms/cm,, and wherein the oxygen density of the single crystal produced is uniformly distributed along its longitudinal axis. The electrical power inputted into the main heater,surrounding the quartz crucible,and the top heater,shaped like a reverse frustrated cone and disposed above the quartz crucible,, is controlled to keep the temperature of the melt,in a preset range during the process of pulling up the single crystal silicon,. When combining the main heater,and the top heater,, the heat emitted from the main heater,can be kept small, and the heat load on the quartz crucible,and the amount of oxygen released from the quartz crucible,and dissloved into melt,can be reduced. Therefore, a single crystal of low oxygen density and with uniformly distributed oxygen density along its longitudinal axis can be obtained. Furthermore, the single-crystal silicon,can be assigned a proper thermal history. In the above process, if a magnetic field is applied to the melt, then single crystals of much lower oxygen density can be obtained.

Method for manufacturing single crystal

A suspender for suspending polycrystalline rods steadfastly and easily in a furnace for single-crystal fabrication by the recharge or additionally charged method is disclosed. The suspender includes a plate which is made of molybdenum or SiC-coated graphite and a stick perpendicularly connected to the center of the plate. Both sides of the openings are arms for supporting the polycrystalline rods, thereby suspending the polycrystalline rods vertically in the opening. Means for preventing the polycrystalline rods from slipping out of the suspender are provided at ends of the arms. Therefore, the polycrystalline rods will not slip from the opening even though the plate is inclined. The suspender is suspended in the furnace by a stick. The polycrystalline rods require few tasks to form grooves and install on the suspender, thus decreasing the process time and manufacturing cost.

Suspender for polycrystalline material rods

Growing community of inventors

Kanagawa, Japan

Hiroshi Inagaki