Mitsubishi Materials Corporation

Mitsubishi Materials Electronic Chemicals Co., Ltd.

Akita University

Governor of Akita Prefecture

Dai Nippon Toryo Co., Ltd.

Hiroshi Ikeda

Saburo Wakita

Masato Murouchi

Masamichi Murota

Daigou Mizoguchi

Yoichi Akagami

Masami Kagaya

Yoshihiro Minamiya

Kouji Tsuzukihashi

Masahiro Kanai

Hiroshi Nanjo

Hirotoshi Umeda

Atsuo Yanagimachi

Ryuta Nakamura

Koji Tsuzukihashi

Kenji Hayashi

Masaaki Murakami

Kunio Omura

Acceleration and automation of immunohistochemical staining are achieved as follows: an automatic electric field immunohistochemical staining apparatus is configured to provided with a sample mounting unit, a solution supply unit, an electric field stifling unit, and a washing unit; the sample mounting unit on which a glass substrate with a tissue specimen fixed thereto is mounted and the electric field stirring unit that includes an upper electrode are operated in coordination to activate an antigen in the tissue specimen; the sample mounting unit and the solution supply unit containing various solutions are operated in coordination to supply a primary-antibody-containing solution to the tissue specimen; the sample mounting unit and the electric field stirring unit are operated in coordination to perform an antigen-antibody reaction of the antigen in the tissue specimen and a primary antibody; and the electric field stirring unit and the washing unit are operated in coordination.

Apparatus for automatic electric field immunohistochemical staining and method for automatic electric field immunohistochemical staining

A method for manufacturing a polycrystalline silicon ingot includes unidirectionally solidifying a molten silicon upwardly from the bottom of a crucible, wherein the crucible is provided with silica deposited on the bottom of the crusible; and then dividing the degree of solidification in the crucible into a first zone from 0 mm to X in height (10 mm&#x2266;X&#x3c;30 mm), a second zone from X to Y in height (30 mm&#x2266;Y&#x3c;100 mm) and a third zone of Y or more in height, based on the bottom of the crucible, wherein a solidification rate V1 in the first zone is set in the range of 10 mm/h&#x2266;V1&#x2266;20 mm/h and a solidification rate V2 in the second zone is set in the range of 1 mm/h&#x2266;V2&#x2266;5 mm/h.

Method for manufacturing polycrystalline silicon ingot, and polycrystalline silicon ingot

This metallic silicon is manufactured by refining molten crude metallic silicon by unidirectional solidification, and has a purity of 3N or more to 6N or less and an average crystal grain diameter of 1 mm or more. This method for manufacturing the metallic silicon includes: solidifying molten crude metallic silicon in a mold which contains fine silica particles in an inner peripheral layer thereof by unidirectional solidification at a rate of 1 mm/min or less; and then cooling to 200&#xb0; C. or below at a rate of 2&#xb0; C./min or less.

Metallic silicon and method for manufacturing the same

Growing community of inventors

Akita, Japan

Hiroshi Ikeda