Other

Canon Kabushiki Kaisha

Semiconductor Process Laboratory Co., Ltd.

Canon Sales Co., Inc.

Hiroshi Ikakura

Kazuo Maeda

Yoshimi Shioya

Tomomi Suzuki

Kouichi Ohira

Youichi Yamamoto

Yuichiro Kotake

Shoji Ohgawara

Taro Kato

Tadashi Sawayama

Takumi Ogino

Yuhko Nishimoto

Jun Iba

Nobutaka Ukigaya

Takehito Okabe

Yukihiro Hayakawa

Takaharu Kondo

Noboru Tokumasu

Toru Eto

Takayoshi Azumi

Makoto Kurotobi

Koichi Ohira

Syunji Nishikawa

Tadashi Sawamaya

An apparatus includes a substrate on which a pixel with a color filter is formed. The pixel includes a first conversion portion and a second conversion portion in an in-plane direction of the substrate, the second conversion portion having a lower sensitivity to light than a sensitivity of the first conversion portion. In a depth direction of the substrate, the apparatus includes a first member between the first conversion portion and the color filter and a second member between the second conversion portion and the color filter in a depth direction of the substrate. The first member is adjacent to the second member in the in-plane direction of the substrate. A refractive index of the first member is higher than a refractive index of the second member.

Photoelectric conversion apparatus, method of manufacturing the same, and image capturing system

A semiconductor device comprising a first circuit component and a second circuit component, the first circuit component having a first wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a first semiconductor substrate, the second circuit component having a second wiring structure formed by stacking one or more wiring layers and one or more insulating layers on a second semiconductor substrate, the first and second wiring structures being bonded to each other, their bonding planes being composed of oxygen atoms and carbon atoms and/or nitrogen atoms bonded to silicon atoms, and, numbers of their atoms satisfying a predetermined equation.

Semiconductor device with insulating layers forming a bonding plane between first and second circuit components, method of manufacturing the same, and electronic device

A solid-state image sensor includes a substrate including a photoelectric conversion portion, an insulating layer having an opening, and a member arranged inside the opening. Letting d be a depth of the opening, the opening has, at an upper end of the opening, a shape having a width in a first direction parallel to the surface of the substrate, and a width in a second direction parallel to the surface of the substrate and orthogonal to the first direction. The widths in the first and second directions are different from each other. The shape is capable of drawing, at each point on a circumference of the opening at the upper end, a circle of 0.6d in diameter which contacts the circumference at the point and does not include a portion outside the opening.

Solid-state image sensor, method of manufacturing the same, and camera

A solid-state imaging apparatus is provided. The apparatus comprises a pixel region where a photoelectric conversion element is arranged, a first insulating film having a first opening portion which is over the photoelectric conversion element, a first insulator comprising a first portion arranged in the first opening portion, and a second portion covering an upper surface of the first portion and an upper surface of the first insulating film, a second insulating film having a second opening portion which is over the first opening portion, and a third portion arranged in the second opening portion. A hydrogen concentration of the second portion is higher than a hydrogen concentration of the first insulating film. An upper surface area of the first portion is larger than a lower surface area of the third portion which is over the first portion.

Solid-state imaging apparatus, method of manufacturing the same, and camera

A method for manufacturing a solid-state image pickup device that includes a substrate including a photoelectric conversion unit and a waveguide arranged on the substrate, the waveguide corresponding to the photoelectric conversion unit and including a core and a cladding, includes a first step and a second step, in which in the first step and the second step, a member to be formed into the core is formed in an opening in the cladding by high-density plasma-enhanced chemical vapor deposition, and in which after the first step, in the second step, the member to be formed into the core is formed by the high-density plasma-enhanced chemical vapor deposition under conditions in which the ratio of a radio-frequency power on the back face side of the substrate to a radio-frequency power on the front face side of the substrate is higher than that in the first step.

Solid-state image pickup device and method for manufacturing solid-state image pickup device

A member for light path to a photoelectric conversion portion includes a middle portion, and a peripheral portion having a refractive index different from the refractive index of the middle portion, and within some plane in parallel with the light receiving surface of a photoelectric conversion portion, and within other plane closer to the light receiving surface than the some plane in parallel with the light receiving surface, the peripheral portion is continuous with the middle portion and surrounds the middle portion, and also the refractive index of the peripheral portion is higher than the refractive index of an insulator film, and the thickness of the peripheral portion within the other plane is smaller than the thickness of the peripheral portion within the some plane.

Photoelectric conversion element, and photoelectric conversion apparatus and image sensing system

A process gas consisting of one of N, NO or a mixture thereof is converted to a plasma and then a surface of a copper wiring layer is exposed to the plasma of the process gas, whereby a surface portion of the copper wiring layer is reformed and made into a copper diffusion preventing barrier. According to this method, a noble semiconductor device can be provided having increased operational speed and less copper diffusion.

Semiconductor device and method of manufacturing the same

The present invention relates to a semiconductor device in which an interlayer insulating film having a low dielectric constant is formed by covering wiring primarily made of a copper film, and to a method of manufacturing the same. In manufacturing the semiconductor device an insulating film having a low dielectric constant is formed on a substrate by converting a film-forming gas into a plasma for reaction. The method includes forming a low-pressure insulating film on the substrate by coverting the film-forming gas at a first gas pressure into a plasma and forming a high-pressure insulating film on the low-pressure insulating film by converting the film-forming gas at second gas pressure, higher than the first gas pressure, into a plasma and reaction.

The present invention relates to a semiconductor device in which a barrier insulating film is formed to cover a copper film or a wiring consisting mainly of the copper film. The barrier insulating film is a structure of two or more layers including at least a first barrier insulating film containing silicon, oxygen, nitrogen and hydrogen or silicon, oxygen, nitrogen, hydrogen and carbon, and a second barrier insulating film containing silicon, oxygen and hydrogen or silicon, oxygen, hydrogen and carbon.

The present invention relates to a manufacturing method of a semiconductor device in which a barrier insulating film and a main insulating film having low relative dielectric constant are sequentially formed while a wiring mainly consisting of copper film is coated. Its constitution includes the steps of: forming the barrier insulating film on a substrate subject to deposition, in which an electric power having a first frequency (f ) is applied to a first film forming gas containing at least silicon-containing gas and oxygen-containing gas to transform said first film forming gas into plasma and to cause reaction; and forming the main insulating film having low relative dielectric constant on the barrier insulating film , in which an electric power having a second frequency (f ) higher than the first frequency (f ) is applied to a second film forming gas containing at least the silicon-containing gas and the oxygen-containing gas to transform the second film forming gas into plasma and to cause reaction.

Manufacturing method of semiconductor device

The present invention discloses a film forming method for forming an insulating film having a low dielectric constant. This method comprises the steps of adding at least one diluting gas of an inert gas and a nitrogen gas (N ) to a major deposition gas component consisting of siloxane and N O, converting the resultant deposition gas into plasma, causing reaction in the plasma, and forming an insulating film or on a substrate targeted for film formation.

Film forming method, semiconductor device and manufacturing method of the same

There is provided the film forming method of forming the insulating film containing silicon on the substrate by plasmanizing the compound having the siloxane bonds and the oxidizing gas to react with each other.

Film forming method and semiconductor device

In a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant on a substrate from a surface of which a copper wiring is exposed, the interlayer insulating film consists of multi-layered insulating films and the insulating film , that contacts to the copper wiring , out of the multi-layered insulating films is formed by plasmanizing a film forming gas containing at least an alkyl compound having siloxane bonds and any one of nitrogen (N ) and ammonia (NH ) to react.

The present invention relates to a semiconductor device manufacturing method for forming a via hole or a contact hole in an interlayer insulating film with a low dielectric constant. The method includes the steps of forming a nitrogen containing insulating film on a substrate, forming a porous insulating film on the nitrogen-containing insulating film, forming an opening in the underlying insulating film and the porous insulating film, and forming a nitrogen containing insulating film on the surface of the porous insulating film and on the surface of the opening by bringing these surfaces into contact with a plasma of any one of an ammonia gas, a nitrogen gas, and an oxygen nitride gas.

Growing community of inventors

Tokyo, Japan

Hiroshi Ikakura