Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Automotive Systems, Ltd.

Other

Hitachi Metals, Ltd.

Hitachi Astemo Ltd.

Hiroshi Hozoji

Asao Nishimura

Hiroyoshi Kokaku

Masatsugu Ogata

Masanori Segawa

Hiroshi Kikuchi

Kunihiko Nishi

Kunihiro Tsubosaki

Takashi Yokoyama

Gen Murakami

Makoto Kitano

Akio Hasebe

Akihiro Yaguchi

Takashi Yamazaki

Kazuyoshi Oshima

Masahiro Ichitani

Aizo Kaneda

Junichi Saeki

Shozo Nakamura

Isamu Yoshida

Sueo Kawai

Noriyuki Kinjo

Syuuji Eguchi

Ichiro Anjo

Tetsuro Matsumoto

Ichiro Anjoh

Naoya Kanda

Yoshihide Yamaguchi

Tetsurou Matsumoto

Hiroyuki Tenmei

Kinya Nakatsu

Takeshi Tokuyama

Toshiaki Morita

Shigeharu Tsunoda

Toshiya Satoh

Toshiaki Ishii

Yusuke Takagi

Madoka Minagawa

Takanori Ninomiya

Noriyuki Oroku

Kosuke Inoue

Kenji Ujiie

Akira Yajima

Taku Oyama

Masahide Harada

Nobutake Tsuyuno

Eiichi Ide

Takehide Yokozuka

Eiji Matsuzaki

Ryoichi Kajiwara

Nobuyuki Ushifusa

Takehiko Hasebe

Yusuke Yasuda

Hideki Miyazaki

Yoshitaka Takezawa

Kazuhiro Suzuki

Tokihito Suwa

Shigehisa Motowaki

Takao Terabayashi

Kazutoshi Itou

Kenji Hayashi

Takashi Naito

Hiroshi Sasaki

Hiroyuki Itoh

Takuya Aoyagi

Takashi Ando

Akira Matsushita

Motomune Kodama

Atsuo Nishihara

Michiaki Hiyoshi

Junpei Kusukawa

Keisuke Horiuchi

Katsunori Azuma

Satoru Shigeta

Masanori Miyagi

Akio Nishikawa

Masahiko Asano

Shinya Kawakita

Hideto Yoshinari

Shinji Hiramitsu

Hisayuki Imamura

Fumio Sato

Hiroyuki Nagatomo

Osamu Otsuka

Shigeharu Tunoda

A power module includes a double-sided electrode module, a power semiconductor element, a pair of base plates, and a connecting member. The double-sided electrode module has a plurality of electrode wiring boards and a power semiconductor element which are molded with a resin material. The pair of base plates has the double-sided electrode module sandwiched therebetween. The pair of base plates are connected via the connecting member. The connecting member is formed in a curved shape.

Power module, power converter device, and electrically powered vehicle

An object is to improve a core and heat radiation properties from the coil, and to reduce the size of a transformer. In order to attain the object described above, a transformer includes a bobbin wound around with a coil, a columnar core center portion in which the bobbin is mounted, and a plurality of core leg portions joining both ends of the core center portion on the outside of the coil. The size of the core leg portion is larger than the size of the other core leg portions, and the core leg portion includes a flat outer circumferential surface approximately parallel to a surface which is tangent to an outer circumferential side surface of the coil. The transformer is disposed in a housing such that the outer circumferential surface of the core leg portion is tangent to a floor surface of the housing.

Transformer and power converter

In order to address the problem in that, by increasing the gate resistance of a power semiconductor element, while variation of switching time can be controlled, loss due to the gate resistance becomes larger and power efficiency for the entire system is lowered, the present invention provides an insulating substrate capable of uniformizing switching speeds of circuit elements while suppressing influence on power efficiency of the circuit elements. In the insulating substrate according to the present invention, part of a wiring layer is formed as a control signal circuit layer, and part of the control signal circuit layer is formed as a resistance layer that increases input resistance when the circuit element receives a control signal.

Insulating substrate and semiconductor device using same

A power converter device includes a double-sided electrode module in which an electrical wiring board and a power semiconductor element are molded with a resin material. The power converter device also includes a heat dissipating base disposed on both sides of the double-sided electrode module and directly contacting cooling medium. The power converter device also includes a module fixture which presses the heat dissipating base in a state of contact with the heat dissipating base. The module fixture is configured to support a circuit board.

A power converter device includes a double-sided electrode module that converts direct current power to alternating current power, a heat dissipating base, a capacitor module, a positive electrode conductor plate, and a negative electrode conductor plate. In the heat dissipating base, heat dissipation surfaces, facing one another, of the double-sided electrode module facing to one another are held with insulation layers being present between the heat dissipating base, and the heat dissipation surfaces. The capacitor module constitutes a smoothing circuit for inhibiting fluctuation in DC voltage. The positive electrode conductor plate and the negative electrode conductor plate transmit electric power between the capacitor module and the double-sided electrode module.

A power converter device includes a double-sided electrode module that converts direct current power to alternating current power, a heat dissipating base, a capacitor module, a positive electrode conductor plate, and a negative electrode conductor plate. In the heat dissipating base, heat dissipation surfaces, facing one another, of the double-sided electrode module facing to one another are held with insulation layers being present between the heat dissipating base and the heat dissipation surfaces. The capacitor module constitutes a smoothing circuit for inhibiting fluctuation in DC voltage. The positive electrode conductor plate and the negative electrode conductor plate transmit electric power between the capacitor module and the double-sided electrode module.

The present invention is intended to increase the moisture resistance of a resin-sealed electronic control device. The resin-sealed electronic control device includes: a semiconductor chip; a chip capacitor; a chip resistor; a bonding member; a substrate; a case; a heat radiating plate; a glass coating; and a first sealing material. The glass coating directly covers the electronic circuit formed by the element group including: the semiconductor chip; the chip capacitor; and the chip resistor, the bonding member and the substrate, and is sealed by the first sealing material. By being water impermeable, the glass coating prevents water absorption in the vicinity of the element group, and can prevent an increase in the leak current of the semiconductor chip due to water absorption, and an insulation performance drop such as lowered insulation resistance caused by migration within the element group.

Resin-sealed electronic control device

There is provided a wiring material including a core layer made of metal and a clad layer made of metal and a fiber in which the core layer is copper or an alloy containing copper and the clad layer is formed of copper or the alloy containing copper and the fiber having a thermal expansion coefficient lower than that of copper, the wiring material having a stacked structure in which at least one surface of the core layer is closely adhered to the clad layer, and the fiber in the clad layer is arranged so as to be parallel to the surface of the core layer.

Wiring material and semiconductor module using the same

A power module and a power converter device including the power module include: two base plates with their main surfaces facing each other; a semiconductor circuit unit disposed between the two base plates; a connecting member that is connected to the two base plates and forms a housing region in which the semiconductor circuit unit is housed; and an insulating member that is placed between the base plate and the semiconductor circuit unit and secures electrical insulation of the base plate and the semiconductor circuit unit. A rigidity or thickness of the connecting member is less than a rigidity or thickness of the base plate.

A power semiconductor module includes a power semiconductor element formed with a plurality of control electrodes on one main surface, a first conductor plate bonded by way of a first solder material to one of the main surfaces of the power semiconductor element, and a second conductor plate bonded by way of a second solder material on the other main surface of the power semiconductor element. A first protrusion section protruding from the base section of the applicable first conductor plate and including a first protrusion surface formed over the upper side, is formed over the first conductor plate. A second protrusion section including a second protrusion surface formed facing opposite one of the main surfaces of the power semiconductor element. The first solder material is interposed between the power semiconductor element and the first conductor plate while avoiding the plural control electrodes. If there is an projection from a perpendicular direction by one of the main surfaces of the power semiconductor element, the second protrusion section is formed so that the projecting section on a specified side of the second protrusion surface overlaps the projecting section of the step section formed between the base section of the first conductor plate and the first protrusion section. The plural control electrodes on the power semiconductor element are formed along the specified side of the second protrusion surface.

Power semiconductor module and manufacturing method thereof

It is an object of this invention to provide a bonding material capable of realizing bonding by metallic bonding at a bonding interface at a lower temperature compared to a bonding material using a metal particle having an average particle diameter of not more than 100 nm and a bonding method. There is provided a bonding material including a metal particle precursor being at least one selected from the group consisting of a particle of a metal oxide, a particle of a metal carbonate, and a particle of a metal carboxylate and having an average particle diameter of 1 nm to 50 &#x3bc;m and a reducing agent composed of an organic substance, wherein the content of the metal particle precursor is more than 50 parts by mass and not more than 99 parts by mass per 100 parts by mass of the bonding material.

Bonding method and bonding material using metal particle

A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 &#x3bc;m, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.

Low temperature bonding material comprising coated metal nanoparticles, and bonding method

Heat radiation surfacesandof electrode lead framesandmake thermal contact with heat radiation membersvia insulation sheetsto dissipate heat from a power semiconductor elementto the heat radiation members (thick portions). Each of exposed areas of the heat radiation surfacesandand a surfaceof a mold material (sealing material) adjacent to the exposed area produce an uneven step from which either one of the exposed area and the surfaceadjacent to the exposed area projects. The step side surface formed between the convex surface and the concave surface of the uneven step has an inclined surfaceorso configured that an obtuse angle can be formed by the inclined surface and the convex surface and by the inclined surface and the concave surface for each.

Power semiconductor unit, power module, power semiconductor unit manufacturing method, and power module manufacturing method

A semiconductor power module includes an insulated substrate with a plurality of power semiconductor devices mounted thereon and a heat sink for radiating heat generated from the plurality of power semiconductor devices, wherein the heat sink is integrally molded with a plurality of radiation fins on one surface of a planate base by forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape, and the insulated substrate is bonded by metallic bonding to another surface of the base of the heat sink opposite the one surface of the base of the heat sink on which the radiation fins are formed.

Semiconductor power module, inverter, and method of manufacturing a power module

A fabrication method for a resin encapsulated semiconductor device includes the steps of: (1) die-bonding a semiconductor device to a first electrical connection metallic terminal of a wiring substrate; (2) electrically connecting an electrode of the semiconductor device and a second electrical connection metallic terminal of the wiring substrate via an electrical connector; (3) surface treating such an assembly by applying a solution to a surface of the assembly and baking the applied solution; and (4) transfer-molding an insulating encapsulating resin onto the surface-treated assembly.

Fabrication method for resin-encapsulated semiconductor device

Growing community of inventors

Hitachiota, Japan

Hiroshi Hozoji