Mitsubishi Gas Chemical Company, Inc.

Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Mitsubishi Gas Chemical, Inc.

Toso Kabushiki Kaisha (Toso Company Limited)

Hiroshi Horikoshi

Masaki Haneda

Takatoshi Kameshima

Minoru Ishida

Tadashi Iijima

Reijiroh Shohji

Ikue Mitsuhashi

Hideto Hashiguchi

Motoharu Takeuchi

Yuichi Yoshimura

Kouhei Takemura

Hiroyuki Okada

Kikuo Furukawa

Teruo Kamura

Yoshihiko Nishimori

Yousuke Imagawa

Atsuki Niimi

Yoshiaki Yamamoto

Hiroyuki Tanagi

Eiji Koshiishi

Masanori Shimuta

Hiroyasu Tanaka

Takashi Aoki

Kousuke Namiki

Shoichi Hayakawa

Takeshi Nogami

Tomohiro Yamazaki

Koji Kikuchi

Shuzo Sato

Naoki Komai

Akikazu Amagai

Masaki Tamura

Hiizu Ohtorii

Nobuyuki Uemura

Yuuji Nishimura

Akinobu Horita

Shingo Takahashi

Hitoshi Okazaki

Masaaki Takasuka

Iwao Sugiura

Kaori Tai

Atsushi Matsushita

Takahiro Matsui

Kazuto Watanabe

Syota Yamabata

Yosuke Imagawa

Hiroaki Tanaka

Kenichi Takahashi

Noriyuki Kato

Yoshihisa Kagawa

Shoko Suzuki

Yuji Segawa

Masaya Nagata

Kaori Takimoto

Hirohito Ishizuka

Katsuyuki Mizuno

Kazuki Kariyazono

Tetsuya Konishi

Sawako Fuse

Masato Kawashima

Kota Kinjo

Akikazu Amagi

Masahiro Hirahara

Hiroshi Onosato

Hiroshi Nakazawa

Kenichi Toi

Mineki Kubo

Sunao Nojima

Kosuke Namiki

Minoru Ohashi

To provide a photoelectric conversion element which enables an occupied area to be reduced and conversion efficiency and a dynamic range to be adjusted. The photoelectric conversion element includes: a photoelectric conversion unit configured to convert a light signal into a signal charge; a transfer gate structure which is connected to the photoelectric conversion unit and which is configured to transfer the signal charge; a charge storage region to which the signal charge is transferred by the transfer gate structure; a charge holding unit with a capacitor structure which is electrically connected to the charge storage region and which is configured to store the signal charge; and an amplifying transistor of which a control electrode is electrically connected to the charge storage region. The photoelectric conversion unit, the transfer gate structure, and the charge storage region are provided on a first substrate, the amplifying transistor is provided on a second substrate, and the first substrate and the second substrate are laminated.

Photoelectric conversion element, solid-state imaging apparatus, and electronic device

An imaging device according to an embodiment of the present disclosure includes: a first wiring layer; a first insulating film; and a second insulating film. The first wiring layer includes a plurality of first wiring lines that extends in one direction. The plurality of first wiring lines each has a notch at at least one of ends of one surface in a cross section orthogonal to an extending direction. The first insulating film covers a surface of the first wiring layer. The second insulating film is stacked on the first insulating film. The second insulating film forms a gap between the plurality of adjacent first wiring lines.

Imaging device

A semiconductor device includes a first electrode which is provided in a first substrate and of which one surface is positioned on the same surface as a bonding surface between the first substrate and a second substrate, and a second electrode which is provided in the second substrate and of which one surface is positioned on the same surface as a bonding surface and bonded to one surface of the first electrode. Therefore, the semiconductor device includes at least one of a first capacitor which is provided in the first substrate and of which one electrode is electrically connected to a non-exposed surface of the first electrode and a second capacitor which is provided in the second substrate and of which one electrode is electrically connected to a non-exposed surface of the second electrode.

Semiconductor device, solid-state imaging device and electronic device

There is provided a solid-state imaging device including first, second, and third substrates stacked in this order. The first substrate includes a first semiconductor substrate and a first wiring layer. A pixel unit is formed on the first semiconductor substrate. The second substrate includes a second semiconductor substrate and a second wiring layer. The third substrate includes a third semiconductor substrate and a third wiring layer. A first coupling structure couples two of the first, second, and third substrates to each other includes a via. The via has a structure in which electrically-conductive materials are embedded in one through hole and another through hole, or a structure in which films including electrically-conductive materials are formed on inner walls of the through holes. The one through hole exposes a first wiring line in one of the wiring layers. The other through hole exposes a second wiring line another wiring layer.

Solid-state imaging device and electronic apparatus

To provide a solid-state imaging device and an electronic apparatus with further improved performance. A solid-state imaging device including: a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked; a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked; and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. The pixel unit has pixels arranged thereon. The first substrate and the second substrate are bonded together in a manner that the first multi-layered wiring layer and the second semiconductor substrate are opposed to each other. A first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate to each other does not include a coupling structure formed from the first substrate as a base over bonding surfaces of the first substrate and the second substrate. Alternatively, the first coupling structure does not exist.

Solid-state imaging device and electronic device including coupling structures for electrically interconnecting stacked semiconductor substrates

A solid-state imaging device is provided that comprises a first substrate that includes a first multi-layered wiring layer stacked on a first semiconductor substrate, a second substrate that includes a second multi-layered wiring layer and an insulating layer stacked on a second semiconductor substrate, and a third substrate that includes a third multi-layered wiring layer stacked on a third semiconductor substrate. A first coupling structure electrically couples the first and second substrates to each other. A second coupling structure exists on bonding surfaces of the second and third substrates, and includes an electrode junction structure in which electrodes formed on respective bonding surfaces are in direct contact with each other. A first via penetrates the second semiconductor substrate and electrically couples a first electrode to a wiring in the second multi-layered wiring layer. A second via electrically couples the second electrode to another wiring in the third multi-layered wiring layer.

Provided is a solid-state imaging device that includes a first substrate which includes a first semiconductor substrate and a first multi-layered wiring layer that are stacked, a second substrate which includes a second semiconductor substrate and a second multi-layered wiring layer that are stacked, and a third substrate which includes a third semiconductor substrate and a third multi-layered wiring layer that are stacked. The solid-state imaging device further includes a first coupling structure for electrically coupling a circuit of the first substrate and a circuit of the second substrate to each other. The first coupling structure includes a via in which one through hole electrically couples a predetermined wiring line in the first multi-layered wiring layer, and a predetermined wiring line in the second multi-layered wiring layer or a predetermined wiring line in the third multi-layered wiring layer to each other.

There is provided a solid-state imaging device including first, second, and third substrates stacked in this order. The first substrate includes a first semiconductor substrate and a first wiring layer. A pixel unit is formed on the first semiconductor substrate. The second substrate includes a second semiconductor substrate and a second wiring layer. The third substrate includes a third semiconductor substrate and a third wiring layer. A first coupling structure couples two of the first, second, and third substrates to each other includes a via. The via has a structure in which electrically-conductive materials are embedded in one through hole and another through hole, or a structure in which films including electrically-conductive materials are formed on inner walls of the through holes. The one through hole exposes a first wiring line in one of the wiring layers. The other through hole exposes a second wiring line in another wiring layer.

The present application provides a composition for an optical material containing a compound (a) and/or a compound (b) and a compound (c) which are described below. The proportion of the compound (a) and/or the compound (b) is 0.001-30.0% by mass. The compound (a) is a compound represented by formula (1). The compound (b) is a compound represented by formula (2). The compound (c) is an episulfide compound.

Composition for optical material and optical material

A solid-state imaging device including: a first substrate having a pixel unit, and a first semiconductor substrate and a first wiring layer; a second substrate with a circuit, and a second semiconductor substrate and a second wiring layer; and a third substrate with a circuit, and a third semiconductor substrate and a third wiring layer. The first and second substrates are bonded together such that the first wiring layer and the second semiconductor substrate are opposed to each other. The device includes a first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate. The first coupling structure includes a via in which electrically-conductive materials are embedded in a first through hole that exposes a wiring line in the first wiring layer and in a second through hole that exposes a wiring line in the second wiring layer or a film-formed structure.

Light detecting device with multiple substrates

There is provided a solid-state imaging device including: a first substrate including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate having a pixel unit with pixels; a second substrate including a second semiconductor substrate and a second wiring layer, the second semiconductor substrate having a circuit with a predetermined function; and a third substrate including a third semiconductor substrate and a third wiring layer, the third semiconductor substrate having a circuit with a predetermined function, the first, second, and third substrates being stacked in this order, the first substrate and the second substrate being bonded together with the first wiring layer and the second wiring layer opposed to each other, a first coupling structure on bonding surfaces of the first substrate and the second substrate, and including an electrode junction structure with electrodes formed on the respective bonding surfaces in direct contact with each other.

The present invention makes it possible to provide a compound represented by formula (1) and a composition for an optical material containing this compound. (Where m+n=4, m represents an integer of from 0 to 3, and n represents an integer of from 1 to 4.) In addition, the present invention makes it possible to provide a method for producing an optical material, the method including a step for adding 0.0001-10 parts by mass of a polymerization catalyst per 100 parts by mass of the composition for an optical material, polymerizing, and curing.

Allyl compound and composition for optical material

A solid-state imaging device including a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked, a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked, and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. A first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate to each other does not include a coupling structure formed from the first substrate as a base over bonding surfaces of the first substrate and the second substrate.

The present invention enables provision of a production method for 1,2,3,5,6-pentathiepane, the method comprising, in the following order, step A for reacting a trithiocarbonate, sulfur, and a methane dihalide together using a phase-transfer catalyst in a multilayer system having a water layer and an organic layer, step B for separating the water layer from the organic layer, and step C for stopping the reaction using an acid.

Production method for 1,2,3,5,6-pentathiepane

Provided is a composition for optical materials that gives optical materials which can have at least one improved property selected from among satisfactory mold releasability after polymerization and curing, unsusceptibility to separation from the mold during polymerization and curing, transparency, and low-level striae. The present invention further provides a compound represented by formula (1). The composition for optical materials comprises the compound represented by formula (1) and a compound represented by formula (2). (In formula (1), Xand Xrepresent O or S, provided that both Xand Xare O or that Xis O and Xis S.)

Episulfide compound and composition for optical material

Growing community of inventors

Tokyo, Japan

Hiroshi Horikoshi