Ihi Corporation

Hiroshi Horai

Masahiro Yoshida

Ichiro Nakamoto

Tatsuya Sodekoda

In an ion implanting apparatusincluding a separation slitwhich receives an ion beamhaving passed through a mass-separation electromagnetand allows a desired type of ion to selectively pass therethrough, the separation slitis operable to vary a shape of a gap through which the ion beampasses. In addition, the ion implanting apparatusincludes a variable slitwhich is disposed between an extraction electrode systemand the mass-separation electromagnetso as to form a gap through which the ion beampasses and is operable to vary a shape of the gap so as to shield a part of the ion beamextracted from the ion sourceThe ion implanting apparatusmay include both or one of the separation slitand the variable slit

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Tokyo, Japan

Hiroshi Horai