Kyocera Corporation

Hiroshi Hayashi

Shiro Miyazaki

Hisashi Higuchi

Kazumasa Ohkawa

Masahiko Goto

Yoshiyuki Kawaguchi

Shoji Mayama

Yoichiro Shimono

The oscillating element includes a crystal blank, a pair of excitation electrodes, and a pair of pad portions. The crystal blank includes a pair of major surfaces, at least partially configured by crystal planes, and side surfaces which connect outer edges of the pair of major surfaces. Further, it includes a mesa portion and an outer peripheral portion which surrounds the mesa portion and has a thickness between the pair of major surfaces thinner than that of the mesa portion. The excitation electrodes are individually located on the pair of major surfaces. The pair of pad portions are located on one of the pairs of major surfaces and are electrically connected with the excitation electrodes. At least a portion of an edge part which is in contact with a crystal plane includes a projecting portion, which does not exceed the height of the mesa portion from the outer peripheral portion.

Crystal oscillating element, crystal oscillation device, and method of manufacturing crystal oscillating element

The present invention relates to an improvement of an electrophotographic sensitive member comprising an amorphous silicon photoconductive layer and an amorphous silicon carbide surface layer formed on said amorphous silicon photoconductive layer. An electrophotographic sensitive member with amorphous silicon as a photoconductive layer has been already practically used and a quantity thereof produced has been on the increase year by year. In this sensitive member, as a rule, in order to increase a surface hardness, a surface layer formed of amorphous silicon carbide has been formed. An electrophotographic sensitive member with such two layers as the fundamental layer structure improved in charge acceptance, residual electric potential, photosensitivy and the like by forming a carrier blocking layer containing boron, oxygen, nitrogen and the like in a quantity within a desired range between a substrate for use in a sensitive member and the amorphous silicon photoconductive layer has been provided. However, the above described sensitive member has shown problems in that a sufficiently high initial electric potential can not be obtained yet and an electric potential decayed until the development from the charging by a corona discharge to give the initial electric potential to the surface, that is a dark decay, is large, so that the sufficiently high surface electric potential can not be obtained in the development. In view of the above described, it is an object of the present invention to provide an electrophotographic sensitive member which is improved in dark decay characteristics and capable of obtaining a high electric potential at a position where the development is conducted.

Layer electrophotographic sensitive member comprising morphous silicon

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Moriyama, Japan

Hiroshi Hayashi