Sharp Kabushiki Kaisha Corporation

Panasonic Corporation

Rohm Co., Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Joled Inc.

Sanyo Chemical Industries, Ltd.

501 Sharp Kabushiki Kaisha

Panasonic Liquid Display Co., Ltd.

Hiroshi Hayashi

Saburo Yamamoto

Taiji Morimoto

Osamu Yamamoto

Nobuyuki Miyauchi

Shigeki Maei

Hidenori Kawanishi

Seiki Yano

Takahiro Kawashima

Shinji Kaneiwa

Sadayoshi Matsui

Satoru Nate

Genshirou Kawachi

Mitsuhiro Matsumoto

Masahiro Yamaguchi

Mototaka Taneya

Genshiro Kawachi

Haruhisa Takiguchi

Kazuaki Sasaki

Arinobu Kanegae

Masaki Kondo

Motoyuki Suzuki

Takehiro Shiomoto

Shinya Ono

Tetsuo Takematsu

Masahiro Sato

Hiroyuki Hosoba

Yoshinori Sato

Atsuo Tsunoda

Masahiro Satoh

Yasutomo Takeuchi

Toshiaki Yoshitani

Toshikazu Fujii

Mineo Nishikawa

Tomoaki Izumi

Mami Nonoguchi

Yuichi Fujii

Kozo Hiraishi

Genshiro Kawashi

Shoji Nishimula

Taiji Morimato

Nobuybuki Miyauchi

A display is provided that includes a display having a light-emitting element and a drive transistor, which supplies a current to the light-emitting element causing the light-emitting element to emit light. The display also includes a signal line driving circuit that supplies a signal voltage applied between a gate and a source of the drive transistor, and a control circuit that calculates an amount of threshold voltage shift of the drive transistor on the basis of an amount of deterioration of a threshold voltage of the drive transistor during a deterioration period, and corrects the signal voltage in accordance with the amount of threshold voltage shift.

Display device and method for correcting signal voltage using determined threshold voltage shift

A second control circuit is configured to switch a pulse signal to a level which turns off a second switching transistor when a coil current that flows through a primary winding reaches a predetermined threshold current. The second control circuit is configured to start a switching operation when a power supply for an electronic device is turned on, to set the threshold current to a first value when an intermediate voltage is higher than a predetermined level, and to set the threshold current to a second value that is lower than the first value when the intermediate voltage is lower than a predetermined level. A first control circuit is configured to start a switching operation upon receiving an instruction from a microcontroller to start operating.

PFC DC/AC/DC power converter with reduced power loss

A display device includes a display unit including luminescence pixels each including a luminescence element and a driving transistor configured to supply a current to the luminescence element to cause the element to emit light, a signal line driving circuit configured to supply a voltage applied between a gate and a source of the driving transistor, and a control circuit configured to apply a certain voltage between the gate and the source of the driving transistor by controlling the signal line driving circuit and the display unit when a power supply to the signal line driving circuit is stopped. The control circuit applies the certain voltage between the gate and the source of the driving transistor so that a recovery of a shift amount of a threshold voltage of the driving transistor is suppressed, the recovery being made when the power supply to the signal line driving circuit is stopped.

Display device and driving method for the same

A thin-film semiconductor device includes: a substrate; a gate electrode above the substrate; a gate insulation film above the gate electrode; a channel layer above the gate insulation film, the channel layer having a raised part; a channel protection layer over the raised part of the channel layer, the channel protection layer comprising an organic material, and the organic material including silicon, oxygen, and carbon; an interface layer at an interface between a top surface of the raised part of the channel layer and the channel protection layer, and comprises at least carbon and silicon that derive from the organic material; and a source electrode and a drain electrode each provided over a top surface and a side surface the channel protection layer, a side surface of the interface layer, a side surface of the raised part of the channel layer, and a top surface of the channel layer.

Thin-film semiconductor device for display apparatus and method of manufacturing same

The present invention provides an Alternating Current/Direct Current (AC/DC) converter employing measures not only against residual voltage but also to reduce power consumption. The AC/DC converter receives an Alternating Current (AC) voltage through a concentric plug and converts the AC voltage into a Direct Current (DC) voltage. A discharge path is disposed on a path from a discharge terminal to a ground terminal. A detection circuit compares a wave detection voltage with a predetermined threshold voltage, and enables the discharge path to be turned on when the wave detection voltage is continuously lower than the threshold voltage for a predetermined detection time.

AC/DC converter, and AC power adapter and electronic apparatus using the same

A thin film semiconductor device comprises a substrate, a gate electrode disposed above the substrate, an oxide semiconductor layer disposed above the substrate so as to oppose the gate electrode, a channel protective layer disposed on the oxide semiconductor layer, and a source electrode and a drain electrode each connected to the oxide semiconductor layer. The density of states DOS [eVcm] of oxygen defects in the oxide semiconductor layer satisfies the following relationship:DOS&#x2266;1.710&#xd7;10&#xd7;()&#x2212;6.468&#xd7;10&#xd7;()+6.113&#xd7;10provided that 2.0 eV&#x2266;Ec&#x2212;E&#x2266;2.7 eVwhere Ec [eV] is an energy level of a conduction band edge of the oxide semiconductor layer and E [eV] is a predetermined energy level of the oxide semiconductor layer.

Thin film semiconductor device and manufacturing method therefor

In a thin-film semiconductor device, a semiconductor layer has a bandgap energy of 1.6 eV or less, an insulating layer formed above the semiconductor layer includes: a first insulating layer region placed outside of a first contact opening and above one end of a gate electrode; a second insulating layer region placed outside of a second contact opening and above the other end of the gate electrode which opposes the one end; and a third insulating layer region being rectangular and placed between the first contact opening and the second contact opening.

Thin-film semiconductor device and method of manufacturing the same

A thin-film semiconductor device according to the present disclosure includes: a substrate; a gate electrode formed above the substrate; a gate insulating film formed on the gate electrode; a channel layer that is formed of a polycrystalline semiconductor layer on the gate insulating film; an amorphous semiconductor layer formed on the channel layer and having a projecting shape in a surface; and a source electrode and a drain electrode that are formed above the amorphous semiconductor layer, and a first portion included in the amorphous semiconductor layer and located closer to the channel layer has a resistivity lower than a resistivity of a second portion included in the amorphous semiconductor layer and located closer to the source and drain electrodes.

Thin-film semiconductor device including a multi-layer channel layer, and method of manufacturing the same

Power supply apparatus

A method of manufacturing a thin-film semiconductor device according to the present disclosure includes: preparing a substrate; forming a gate electrode above the substrate; forming a first insulating film on the gate electrode; forming a semiconductor thin film that is to be a channel layer, on the first insulating film; forming a second insulating film on the semiconductor thin film; irradiating the second insulating film with a beam so as to increase a transmittance of the second insulating film; and forming a source electrode and a drain electrode above the channel layer.

A thin-film transistor device includes: a gate electrode above a substrate; a gate insulating film on the gate electrode; a crystalline silicon thin film above the gate insulating film; a first semiconductor film above the crystalline silicon thin film; a pair of second semiconductor films above the first semiconductor film; a source electrode over one of the second semiconductor films; and a drain electrode over an other one of the second semiconductor films. The first semiconductor film is provided on the crystalline silicon thin film. A relationship E&#x3c;Eis satisfied where Eand Edenote energy levels at lower ends of conduction bands of the crystalline silicon thin film and the first semiconductor film, respectively.

Thin-film transistor device and method for manufacturing thin-film transistor device

A thin-film transistor device includes: a gate electrode above a substrate; a gate insulating film on the gate electrode; a crystalline silicon thin film including a channel region which is provided on the gate insulating film; semiconductor films on at least the channel region; an insulating film made of an organic material which is provided over the channel region and above the semiconductor films; a source electrode over at least an end portion of the insulating film; and a drain electrode over at least the other end portion of the insulating film and facing the source electrode. The semiconductor films include at least a first semiconductor film and a second semiconductor film provided on the first semiconductor film. A relationship E&#x3c;Eis satisfied where Eand Edenote energy levels at lower ends of conduction bands of the crystalline silicon thin film and the first semiconductor film, respectively.

A current limiting comparator generates a current limiting signal Swhich is asserted when a detection voltage Vs at a detection terminal CS is higher than a predetermined threshold voltage V. A mask signal generating unit generates a mask signal Swhich is asserted after a predetermined delay time Telapses after a switching transistor is turned on. A pulse signal generating unit has: a function (a) in which, when the set signal Sis asserted in a period in which the current limiting signal Sis negated, a pulse signal Sis switched to a first level; and a function (b) in which, when the reset signal Sis asserted, or when the current limiting signal Sis asserted in a period in which the mask signal Sis negated, the pulse signal Sis switched to a second level.

Step down switching regulator

A thin-film semiconductor device includes, in order, a substrate, a gate electrode, a gate insulating film, a first channel layer, and a second channel layer. The second channel layer includes a protrusion between first top surface end portions. The protrusion has first lateral surfaces that each extend between one of the first top surface end portions and a top surface of the protrusion. An insulation layer is on the top surface of the protrusion. The insulation layer has second lateral surfaces that each extend to one of second top surface end portions of the insulation layer. Two contact layers are each on one of the second top surface end portions of the insulation layer, adjacent one of the second lateral surfaces of the insulation layer, adjacent one of the first lateral surfaces of the protrusion, and on one of the first top surface end portions of the second channel layer. A source electrode is on one of the two contact layers, and a drain electrode is on the other of the two contact layers. The two contact layers and the upper portion of the protrusion of said second channel layer are of opposite conductivity types.

Thin-film semiconductor device for display apparatus thereof and manufacturing method thereof

In this semiconductor laser device, an InGaP etching block layeras an etching selection layer having etching selectivity for an n-type AlInP current block layer, which is a non-optical-absorption layer, is formed on the n-type current block layer. Since this etching block layerprevents the current block layeron both sides of a ridgefrom being etched during manufacture, a contact layercan be prevented from entering gaps between the sides of this ridgeand the current block layer. Therefore, light oscillating in an active layeris taken out from a device end surface without being absorbed in the contact layer. According to this semiconductor laser device, an oscillation threshold current and an operation current can be maintained low, deterioration of differential quantum efficiency can be prevented and reliability can be improved.

Semiconductor laser device capable of maintaining the operation current low and method of manufacturing the same

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Kyoto, Japan

Hiroshi Hayashi